Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NVMFS5C673NWFT1G

NVMFS5C673NWFT1G

MOSFET N-CH 60V 14A/50A 5DFN

onsemi
3,298 -

RFQ

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 14A (Ta), 50A (Tc) 10V 10.7mOhm @ 7A, 10V 4V @ 35µA 9.6 nC @ 10 V ±20V 680 pF @ 30 V - 3.6W (Ta), 46W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AOW10N65

AOW10N65

MOSFET N-CH 650V 10A TO262

Alpha & Omega Semiconductor Inc.
3,170 -

RFQ

AOW10N65

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 10A (Tc) 10V 1Ohm @ 5A, 10V 4.5V @ 250µA 33 nC @ 10 V ±30V 1645 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOW12N50

AOW12N50

MOSFET N-CH 500V 12A TO262

Alpha & Omega Semiconductor Inc.
3,956 -

RFQ

AOW12N50

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 12A (Tc) 10V 520mOhm @ 6A, 10V 4.5V @ 250µA 37 nC @ 10 V ±30V 1633 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
NVD5C460NT4G

NVD5C460NT4G

MOSFET N-CH 40V 18A/70A DPAK

onsemi
2,269 -

RFQ

NVD5C460NT4G

Технические

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 18A (Ta), 70A (Tc) 10V 4.9mOhm @ 25A, 10V 4V @ 60µA 26 nC @ 10 V ±20V 1600 pF @ 25 V - 3W (Ta), 47W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NVTFWS004N04CTAG

NVTFWS004N04CTAG

MOSFET N-CH 40V 18A/77A 8WDFN

onsemi
3,478 -

RFQ

NVTFWS004N04CTAG

Технические

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 18A (Ta), 77A (Tc) 10V 4.9mOhm @ 35A, 10V 3.5V @ 50µA 18 nC @ 10 V ±20V 1150 pF @ 25 V - 3.2W (Ta), 55W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTTFS5CS73NLTAG

NTTFS5CS73NLTAG

T6 60V NCH LL IN U8FL

onsemi
2,581 -

RFQ

Tape & Reel (TR),Bulk * Active - - - - - - - - - - - - - -
TJ50S06M3L(T6L1,NQ

TJ50S06M3L(T6L1,NQ

MOSFET P-CH 60V 50A DPAK

Toshiba Semiconductor and Storage
2,474 -

RFQ

TJ50S06M3L(T6L1,NQ

Технические

Tape & Reel (TR) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 60 V 50A (Ta) 6V, 10V 13.8mOhm @ 25A, 10V 3V @ 1mA 124 nC @ 10 V +10V, -20V 6290 pF @ 10 V - 90W (Tc) 175°C (TJ) Surface Mount
IPL65R1K0C6SATMA1

IPL65R1K0C6SATMA1

MOSFET N-CH 650V 4.2A THIN-PAK

Infineon Technologies
2,625 -

RFQ

IPL65R1K0C6SATMA1

Технические

Tape & Reel (TR),Bulk CoolMOS™ C6 Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 4.2A (Tc) 10V 1Ohm @ 1.5A, 10V 3.5V @ 150µA 15 nC @ 10 V ±20V 328 pF @ 100 V - 34.7W (Tc) -40°C ~ 150°C (TJ) Surface Mount
SIHD6N65ET1-GE3

SIHD6N65ET1-GE3

MOSFET N-CH 650V 7A TO252AA

Vishay Siliconix
3,705 -

RFQ

SIHD6N65ET1-GE3

Технические

Tape & Reel (TR) E Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 600mOhm @ 3A, 10V 4V @ 250µA 48 nC @ 10 V ±30V 820 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHD6N65ET4-GE3

SIHD6N65ET4-GE3

MOSFET N-CH 650V 7A TO252AA

Vishay Siliconix
2,651 -

RFQ

SIHD6N65ET4-GE3

Технические

Tape & Reel (TR) E Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 600mOhm @ 3A, 10V 4V @ 250µA 48 nC @ 10 V ±30V 820 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHD6N65ET5-GE3

SIHD6N65ET5-GE3

MOSFET N-CH 650V 7A TO252AA

Vishay Siliconix
2,137 -

RFQ

SIHD6N65ET5-GE3

Технические

Tape & Reel (TR) E Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 600mOhm @ 3A, 10V 4V @ 250µA 48 nC @ 10 V ±30V 820 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM038N03PQ33 RGG

TSM038N03PQ33 RGG

MOSFET N-CH 30V 78A 8PDFN

Taiwan Semiconductor Corporation
2,733 -

RFQ

TSM038N03PQ33 RGG

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 78A (Tc) 4.5V, 10V 3.8mOhm @ 19A, 10V 2.5V @ 250µA 25 nC @ 4.5 V ±20V 2557 pF @ 15 V - 39W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DMP4006SPSW-13

DMP4006SPSW-13

MOSFET BVDSS: 41V~60V POWERDI506

Diodes Incorporated
3,255 -

RFQ

DMP4006SPSW-13

Технические

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 40 V 115A (Tc) 6V, 10V 5.2mOhm @ 9.8A, 10V 3V @ 250µA 162 nC @ 10 V ±20V 6855 pF @ 20 V - 3.4W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount, Wettable Flank
SPD03N50C3ATMA1

SPD03N50C3ATMA1

MOSFET N-CH 500V 3.2A TO252-3

Infineon Technologies
1,080 -

RFQ

SPD03N50C3ATMA1

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 500 V 3.2A (Tc) 10V 1.4Ohm @ 2A, 10V 3.9V @ 135µA 15 nC @ 10 V ±20V 350 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AOWF12N50

AOWF12N50

MOSFET N-CH 500V 12A TO262F

Alpha & Omega Semiconductor Inc.
2,076 -

RFQ

AOWF12N50

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 12A (Tc) 10V 520mOhm @ 6A, 10V 4.5V @ 250µA 37 nC @ 10 V ±30V 1633 pF @ 25 V - 28W (Tc) -55°C ~ 150°C (TJ) Through Hole
ATP301-TL-H

ATP301-TL-H

MOSFET P-CH 100V 28A ATPAK

onsemi
2,612 -

RFQ

ATP301-TL-H

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 100 V 28A (Ta) 10V 75mOhm @ 14A, 10V - 73 nC @ 10 V ±20V 4000 pF @ 20 V - 70W (Tc) 150°C (TJ) Surface Mount
NTTYS009N08HLTWG

NTTYS009N08HLTWG

T8 80V N-CH LL IN LFPAK33 PACKAG

onsemi
2,836 -

RFQ

NTTYS009N08HLTWG

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 80 V 12A (Ta), 58A (Tc) 4.5V, 10V 8.6mOhm @ 10A, 10V 2V @ 70µA 24 nC @ 10 V ±20V 1402 pF @ 40 V - 3.2W (Ta), 73W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AOTF12N60

AOTF12N60

MOSFET N-CH 600V 12A TO220-3F

Alpha & Omega Semiconductor Inc.
2,342 -

RFQ

AOTF12N60

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 550mOhm @ 6A, 10V 4.5V @ 250µA 50 nC @ 10 V ±30V 2100 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
STD7N65M2

STD7N65M2

MOSFET N-CH 650V 5A DPAK

STMicroelectronics
3,789 -

RFQ

STD7N65M2

Технические

Tape & Reel (TR),Cut Tape (CT) MDmesh™ Active N-Channel MOSFET (Metal Oxide) 650 V 5A (Tc) 10V 1.15Ohm @ 2.5A, 10V 4V @ 250µA 9 nC @ 10 V ±25V 270 pF @ 100 V - 60W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSB104N08NP3GXUSA1

BSB104N08NP3GXUSA1

MOSFET N-CH 80V 13A/50A 2WDSON

Infineon Technologies
3,203 -

RFQ

BSB104N08NP3GXUSA1

Технические

Tape & Reel (TR) OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 80 V 13A (Ta), 50A (Tc) 10V 10.4mOhm @ 10A, 10V 3.5V @ 40µA 31 nC @ 10 V ±20V 2100 pF @ 40 V - 2.8W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
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