Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
CSD19534Q5A

CSD19534Q5A

MOSFET N-CH 100V 50A 8VSON

Texas Instruments
3,890 -

RFQ

CSD19534Q5A

Технические

Tape & Reel (TR),Cut Tape (CT) NexFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 50A (Ta) 6V, 10V 15.1mOhm @ 10A, 10V 3.4V @ 250µA 22 nC @ 10 V ±20V 1680 pF @ 50 V - 3.2W (Ta), 63W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDS86242

FDS86242

MOSFET N-CH 150V 4.1A 8SOIC

onsemi
3,338 -

RFQ

FDS86242

Технические

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 4.1A (Ta) 6V, 10V 67mOhm @ 4.1A, 10V 4V @ 250µA 13 nC @ 10 V ±20V 760 pF @ 75 V - 2.5W (Ta), 5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7613DN-T1-GE3

SI7613DN-T1-GE3

MOSFET P-CH 20V 35A PPAK1212-8

Vishay Siliconix
3,021 -

RFQ

SI7613DN-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 35A (Tc) 4.5V, 10V 8.7mOhm @ 17A, 10V 2.2V @ 250µA 87 nC @ 10 V ±16V 2620 pF @ 10 V - 3.8W (Ta), 52.1W (Tc) -50°C ~ 150°C (TJ) Surface Mount
SIS410DN-T1-GE3

SIS410DN-T1-GE3

MOSFET N-CH 20V 35A PPAK 1212-8

Vishay Siliconix
3,091 -

RFQ

SIS410DN-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 35A (Tc) 4.5V, 10V 4.8mOhm @ 20A, 10V 2.5V @ 250µA 41 nC @ 10 V ±20V 1600 pF @ 10 V - 3.8W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIS892ADN-T1-GE3

SIS892ADN-T1-GE3

MOSFET N-CH 100V 28A PPAK1212-8

Vishay Siliconix
2,393 -

RFQ

SIS892ADN-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 4.5V, 10V 33mOhm @ 10A, 10V 3V @ 250µA 19.5 nC @ 10 V ±20V 550 pF @ 50 V - 3.7W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQD30N06TM

FQD30N06TM

MOSFET N-CH 60V 22.7A TO252

onsemi
2,691 -

RFQ

FQD30N06TM

Технические

Tape & Reel (TR),Cut Tape (CT) QFET® Active N-Channel MOSFET (Metal Oxide) 60 V 22.7A (Tc) 10V 45mOhm @ 11.4A, 10V 4V @ 250µA 25 nC @ 10 V ±25V 945 pF @ 25 V - 2.5W (Ta), 44W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BUK7275-100A,118

BUK7275-100A,118

MOSFET N-CH 100V 21.7A DPAK

Nexperia USA Inc.
2,276 -

RFQ

BUK7275-100A,118

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 21.7A (Tc) 10V 75mOhm @ 13A, 10V 4V @ 1mA - ±20V 1210 pF @ 25 V - 89W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDD6690A

FDD6690A

MOSFET N-CH 30V 12A/46A DPAK

onsemi
3,308 -

RFQ

FDD6690A

Технические

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta), 46A (Tc) 4.5V, 10V 12mOhm @ 12A, 10V 3V @ 250µA 18 nC @ 5 V ±20V 1230 pF @ 15 V - 3.3W (Ta), 56W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TSM2305CX RFG

TSM2305CX RFG

MOSFET P-CHANNEL 20V 3.2A SOT23

Taiwan Semiconductor Corporation
111,000 -

RFQ

TSM2305CX RFG

Технические

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 3.2A (Ta) 1.8V, 4.5V 55mOhm @ 3.2A, 4.5V 1V @ 250µA 10 nC @ 10 V ±8V 990 pF @ 10 V - 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMT10H015LK3-13

DMT10H015LK3-13

MOSFET N-CHANNEL 100V 50A TO252

Diodes Incorporated
3,711 -

RFQ

DMT10H015LK3-13

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 100 V 50A (Tc) 6V, 10V 15mOhm @ 20A, 10V 3.5V @ 250µA 33.3 nC @ 10 V ±20V 1871 pF @ 50 V - 2.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
ZXMN6A25GTA

ZXMN6A25GTA

MOSFET N-CH 60V 4.8A SOT223

Diodes Incorporated
2,630 -

RFQ

ZXMN6A25GTA

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 4.8A (Ta) 4.5V, 10V 50mOhm @ 3.6A, 10V 1V @ 250µA 20.4 nC @ 10 V ±20V 1063 pF @ 30 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
ZXMP10A17GQTA

ZXMP10A17GQTA

MOSFET P-CH 100V 2.4A SOT223

Diodes Incorporated
2,018 -

RFQ

ZXMP10A17GQTA

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active P-Channel MOSFET (Metal Oxide) 100 V 2.4A (Ta) 6V, 10V 350mOhm @ 1.4A, 10V 4V @ 250µA 10.7 nC @ 10 V ±20V 424 pF @ 50 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFB41N15DPBF

IRFB41N15DPBF

MOSFET N-CH 150V 41A TO220AB

Infineon Technologies
3,975 -

RFQ

IRFB41N15DPBF

Технические

Bulk,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 41A (Tc) 10V 45mOhm @ 25A, 10V 5.5V @ 250µA 110 nC @ 10 V ±30V 2520 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3502SPBF

IRL3502SPBF

MOSFET N-CH 20V 110A D2PAK

Infineon Technologies
2,804 -

RFQ

IRL3502SPBF

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 110A (Tc) 4.5V, 7V 7mOhm @ 64A, 7V 700mV @ 250µA (Min) 110 nC @ 4.5 V ±10V 4700 pF @ 15 V - 140W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFS4710PBF

IRFS4710PBF

MOSFET N-CH 100V 75A D2PAK

Infineon Technologies
2,096 -

RFQ

IRFS4710PBF

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 14mOhm @ 45A, 10V 5.5V @ 250µA 170 nC @ 10 V ±20V 6160 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF2807ZSPBF

IRF2807ZSPBF

MOSFET N-CH 75V 75A D2PAK

Infineon Technologies
2,070 -

RFQ

IRF2807ZSPBF

Технические

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 10V 9.4mOhm @ 53A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 3270 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) Surface Mount
64-2092PBF

64-2092PBF

MOSFET N-CH 55V 75A D2PAK

Infineon Technologies
2,059 -

RFQ

64-2092PBF

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 6.5mOhm @ 66A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 3450 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB23N20DPBF

IRFB23N20DPBF

MOSFET N-CH 200V 24A TO220AB

Infineon Technologies
2,085 -

RFQ

IRFB23N20DPBF

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 24A (Tc) 10V 100mOhm @ 14A, 10V 5.5V @ 250µA 86 nC @ 10 V ±30V 1960 pF @ 25 V - 3.8W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL1404PBF

IRL1404PBF

MOSFET N-CH 40V 160A TO220AB

Infineon Technologies
2,247 -

RFQ

IRL1404PBF

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.3V, 10V 4mOhm @ 95A, 10V 3V @ 250µA 140 nC @ 5 V ±20V 6590 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL1404LPBF

IRL1404LPBF

MOSFET N-CH 40V 160A TO262

Infineon Technologies
2,980 -

RFQ

IRL1404LPBF

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.3V, 10V 4mOhm @ 95A, 10V 3V @ 250µA 140 nC @ 5 V ±20V 6600 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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