Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFBF30SPBF

IRFBF30SPBF

MOSFET N-CH 900V 3.6A D2PAK

Vishay Siliconix
2,160 -

RFQ

IRFBF30SPBF

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 900 V 3.6A (Tc) 10V 3.7Ohm @ 2.2A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL3103SPBF

IRL3103SPBF

MOSFET N-CH 30V 64A D2PAK

Infineon Technologies
3,859 -

RFQ

IRL3103SPBF

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 64A (Tc) 4.5V, 10V 12mOhm @ 34A, 10V 1V @ 250µA 33 nC @ 4.5 V ±16V 1650 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRCZ44PBF

IRCZ44PBF

MOSFET N-CH 60V 50A TO220-5

Vishay Siliconix
2,816 -

RFQ

IRCZ44PBF

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 28mOhm @ 31A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 2500 pF @ 25 V Current Sensing 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRC740PBF

IRC740PBF

MOSFET N-CH 400V 10A TO220-5

Vishay Siliconix
2,504 -

RFQ

IRC740PBF

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 550mOhm @ 6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 1200 pF @ 25 V Current Sensing 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRC644PBF

IRC644PBF

MOSFET N-CH 250V 14A TO220-5

Vishay Siliconix
2,072 -

RFQ

IRC644PBF

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 280mOhm @ 8.4A, 10V 4V @ 250µA 65 nC @ 10 V ±20V 1200 pF @ 25 V Current Sensing 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFB31N20DPBF

IRFB31N20DPBF

MOSFET N-CH 200V 31A TO220AB

Infineon Technologies
2,846 -

RFQ

IRFB31N20DPBF

Технические

Bulk,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 31A (Tc) 10V 82mOhm @ 18A, 10V 5.5V @ 250µA 107 nC @ 10 V ±30V 2370 pF @ 25 V - 3.1W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFS59N10DPBF

IRFS59N10DPBF

MOSFET N-CH 100V 59A D2PAK

Infineon Technologies
2,014 -

RFQ

IRFS59N10DPBF

Технические

Tube,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 100 V 59A (Tc) 10V 25mOhm @ 35.4A, 10V 5.5V @ 250µA 114 nC @ 10 V ±30V 2450 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS31N20DPBF

IRFS31N20DPBF

MOSFET N-CH 200V 31A D2PAK

Infineon Technologies
3,531 -

RFQ

IRFS31N20DPBF

Технические

Tube,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 200 V 31A (Tc) 10V 82mOhm @ 18A, 10V 5.5V @ 250µA 107 nC @ 10 V ±30V 2370 pF @ 25 V - 3.1W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB59N10DPBF

IRFB59N10DPBF

MOSFET N-CH 100V 59A TO220AB

Infineon Technologies
3,613 -

RFQ

IRFB59N10DPBF

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 59A (Tc) 10V 25mOhm @ 35.4A, 10V 5.5V @ 250µA 114 nC @ 10 V ±30V 2450 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFI1010NPBF

IRFI1010NPBF

MOSFET N-CH 55V 49A TO220AB FP

Infineon Technologies
3,472 -

RFQ

IRFI1010NPBF

Технические

Bulk,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 49A (Tc) 10V 12mOhm @ 26A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 2900 pF @ 25 V - 58W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF1010NSPBF

IRF1010NSPBF

MOSFET N-CH 55V 85A D2PAK

Infineon Technologies
2,522 -

RFQ

IRF1010NSPBF

Технические

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 85A (Tc) 10V 11mOhm @ 43A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 3210 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRC840PBF

IRC840PBF

MOSFET N-CH 500V 8A TO220-5

Vishay Siliconix
2,193 -

RFQ

IRC840PBF

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1300 pF @ 25 V Current Sensing 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFS41N15DPBF

IRFS41N15DPBF

MOSFET N-CH 150V 41A D2PAK

Infineon Technologies
3,401 -

RFQ

IRFS41N15DPBF

Технические

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 150 V 41A (Tc) 10V 45mOhm @ 25A, 10V 5.5V @ 250µA 110 nC @ 10 V ±30V 2520 pF @ 25 V - 3.1W (Ta) -55°C ~ 175°C (TJ) Surface Mount
IRF2807SPBF

IRF2807SPBF

MOSFET N-CH 75V 82A D2PAK

Infineon Technologies
2,427 -

RFQ

IRF2807SPBF

Технические

Tube,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 75 V 82A (Tc) 10V 13mOhm @ 43A, 10V 4V @ 250µA 160 nC @ 10 V ±20V 3820 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLI2203NPBF

IRLI2203NPBF

MOSFET N-CH 30V 61A TO220AB FP

Infineon Technologies
3,930 -

RFQ

IRLI2203NPBF

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 61A (Tc) 4.5V, 10V 7mOhm @ 37A, 10V 1V @ 250µA 110 nC @ 4.5 V ±16V 3500 pF @ 25 V - 47W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRC540PBF

IRC540PBF

MOSFET N-CH 100V 28A TO220-5

Vishay Siliconix
2,370 -

RFQ

IRC540PBF

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 10V 77mOhm @ 17A, 10V 4V @ 250µA 69 nC @ 10 V ±20V 1300 pF @ 25 V Current Sensing 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL2203NSPBF

IRL2203NSPBF

MOSFET N-CH 30V 116A D2PAK

Infineon Technologies
2,059 -

RFQ

IRL2203NSPBF

Технические

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 116A (Tc) 4.5V, 10V 7mOhm @ 60A, 10V 3V @ 250µA 60 nC @ 4.5 V ±16V 3290 pF @ 25 V - 3.8W (Ta), 180W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL3705NSPBF

IRL3705NSPBF

MOSFET N-CH 55V 89A D2PAK

Infineon Technologies
3,186 -

RFQ

IRL3705NSPBF

Технические

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 89A (Tc) 4V, 10V 10mOhm @ 46A, 10V 2V @ 250µA 98 nC @ 5 V ±16V 3600 pF @ 25 V - 3.8W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRC640PBF

IRC640PBF

MOSFET N-CH 200V 18A TO220-5

Vishay Siliconix
3,752 -

RFQ

IRC640PBF

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 70 nC @ 10 V ±20V 1300 pF @ 25 V Current Sensing 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFIZ48NPBF

IRFIZ48NPBF

MOSFET N-CH 55V 40A TO220AB FP

Infineon Technologies
3,204 -

RFQ

IRFIZ48NPBF

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 40A (Tc) 10V 16mOhm @ 22A, 10V 4V @ 250µA 89 nC @ 10 V ±20V 1900 pF @ 25 V - 54W (Tc) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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