Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
R8005ANJFRGTL

R8005ANJFRGTL

MOSFET N-CH 800V 5A LPTS

Rohm Semiconductor
3,160 -

RFQ

R8005ANJFRGTL

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 800 V 5A (Tc) 10V 2.1Ohm @ 2.5A, 10V 5V @ 1mA 20 nC @ 10 V ±30V 500 pF @ 25 V - 120W (Tc) 150°C (TJ) Surface Mount
R6515ENJTL

R6515ENJTL

MOSFET N-CH 650V 15A LPTS

Rohm Semiconductor
100 -

RFQ

R6515ENJTL

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 315mOhm @ 6.5A, 10V 4V @ 430µA 40 nC @ 10 V ±20V 910 pF @ 25 V - 184W (Tc) 150°C (TJ) Surface Mount
R6515KNJTL

R6515KNJTL

MOSFET N-CH 650V 15A LPTS

Rohm Semiconductor
3,466 -

RFQ

R6515KNJTL

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 315mOhm @ 6.5A, 10V 5V @ 430µA 27.5 nC @ 10 V ±20V 1050 pF @ 25 V - 184W (Tc) 150°C (TJ) Surface Mount
R6015ANX

R6015ANX

MOSFET N-CH 600V 15A TO220FM

Rohm Semiconductor
197 -

RFQ

R6015ANX

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Ta) 10V 300mOhm @ 7.5A, 10V 4.5V @ 1mA 50 nC @ 10 V ±30V 1700 pF @ 25 V - 50W (Tc) 150°C (TJ) Through Hole
R6520ENJTL

R6520ENJTL

MOSFET N-CH 650V 20A LPTS

Rohm Semiconductor
100 -

RFQ

R6520ENJTL

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 205mOhm @ 9.5A, 10V 4V @ 630µA 61 nC @ 10 V ±20V 1400 pF @ 25 V - 231W (Tc) 150°C (TJ) Surface Mount
R6520KNJTL

R6520KNJTL

MOSFET N-CH 650V 20A LPTS

Rohm Semiconductor
3,790 -

RFQ

R6520KNJTL

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 205mOhm @ 9.5A, 10V 5V @ 630µA 40 nC @ 10 V ±20V 1550 pF @ 25 V - 231W (Tc) 150°C (TJ) Surface Mount
R6524KNJTL

R6524KNJTL

MOSFET N-CH 650V 24A LPTS

Rohm Semiconductor
2,876 -

RFQ

R6524KNJTL

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 185mOhm @ 11.3A, 10V 5V @ 750µA 45 nC @ 10 V ±20V 1850 pF @ 25 V - 245W (Tc) 150°C (TJ) Surface Mount
R6524ENJTL

R6524ENJTL

MOSFET N-CH 650V 24A LPTS

Rohm Semiconductor
3,361 -

RFQ

R6524ENJTL

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 185mOhm @ 11.3A, 10V 4V @ 750µA 70 nC @ 10 V ±20V 1650 pF @ 25 V - 245W (Tc) 150°C (TJ) Surface Mount
R6030MNX

R6030MNX

MOSFET N-CH 600V 30A TO220FM

Rohm Semiconductor
369 -

RFQ

R6030MNX

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 150mOhm @ 15A, 10V 5V @ 1mA 43 nC @ 10 V ±30V 2180 pF @ 25 V - 90W (Tc) -55°C ~ 150°C (TJ) Through Hole
RK7002T116

RK7002T116

MOSFET N-CH 60V 115MA SST3

Rohm Semiconductor
2,836 -

RFQ

RK7002T116

Технические

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 115mA (Ta) 5V, 10V 7.5Ohm @ 500mA, 10V 2.5V @ 1mA - ±20V 50 pF @ 25 V - 225mW (Ta) 150°C (TJ) Surface Mount
RE1C002UNTCL

RE1C002UNTCL

MOSFET N-CH 20V 200MA EMT3F

Rohm Semiconductor
3,942 -

RFQ

RE1C002UNTCL

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 200mA (Ta) 1.2V, 2.5V 1.2Ohm @ 100mA, 2.5V 1V @ 1mA - ±8V 25 pF @ 10 V - 150mW (Ta) 150°C (TJ) Surface Mount
2SK2731T146

2SK2731T146

MOSFET N-CH 30V 200MA SMT3

Rohm Semiconductor
3,215 -

RFQ

2SK2731T146

Технические

Tape & Reel (TR),Cut Tape (CT) - Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 200mA (Ta) 4V, 10V 2.8Ohm @ 100mA, 10V 2.5V @ 1mA - ±20V 25 pF @ 10 V - 200mW (Ta) 150°C (TJ) Surface Mount
2SK2887TL

2SK2887TL

MOSFET N-CH 200V 3A CPT3

Rohm Semiconductor
3,267 -

RFQ

2SK2887TL

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 200 V 3A (Ta) 10V 900mOhm @ 1.5A, 10V 4V @ 1mA 8.5 nC @ 10 V ±30V 230 pF @ 10 V - 20W (Tc) 150°C (TJ) Surface Mount
RK3055ETL

RK3055ETL

MOSFET N-CH 60V 8A CPT3

Rohm Semiconductor
2,692 -

RFQ

RK3055ETL

Технические

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 8A (Ta) 10V 150mOhm @ 4A, 10V 2.5V @ 1mA - ±20V 520 pF @ 10 V - 20W (Tc) 150°C (TJ) Surface Mount
RK7002AT116

RK7002AT116

MOSFET N-CH 60V 300MA SST3

Rohm Semiconductor
3,657 -

RFQ

RK7002AT116

Технические

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 300mA (Ta) 4V, 10V 1Ohm @ 300mA, 10V 2.5V @ 1mA 6 nC @ 10 V ±20V 33 pF @ 10 V - 200mW (Ta) 150°C (TJ) Surface Mount
RSS075P03TB

RSS075P03TB

MOSFET P-CH 30V 7.5A 8SOP

Rohm Semiconductor
2,209 -

RFQ

RSS075P03TB

Технические

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 7.5A (Ta) 4V, 10V 21mOhm @ 7.5A, 10V 2.5V @ 1mA 30 nC @ 5 V ±20V 2900 pF @ 10 V - 2W (Ta) 150°C (TJ) Surface Mount
SCT2H12NYTB

SCT2H12NYTB

SICFET N-CH 1700V 4A TO268

Rohm Semiconductor
2,975 -

RFQ

SCT2H12NYTB

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel SiCFET (Silicon Carbide) 1700 V 4A (Tc) 18V 1.5Ohm @ 1.1A, 18V 4V @ 410µA 14 nC @ 18 V +22V, -6V 184 pF @ 800 V - 44W (Tc) 175°C (TJ) Surface Mount
SCT3160KW7TL

SCT3160KW7TL

SICFET N-CH 1200V 17A TO263-7

Rohm Semiconductor
3,930 -

RFQ

SCT3160KW7TL

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel SiCFET (Silicon Carbide) 1200 V 17A (Tc) - 208mOhm @ 5A, 18V 5.6V @ 2.5mA 42 nC @ 18 V +22V, -4V 398 pF @ 800 V - 100W 175°C (TJ) Surface Mount
SCT2H12NZGC11

SCT2H12NZGC11

SICFET N-CH 1700V 3.7A TO3PFM

Rohm Semiconductor
3,938 -

RFQ

SCT2H12NZGC11

Технические

Tube - Active N-Channel SiCFET (Silicon Carbide) 1700 V 3.7A (Tc) 18V 1.5Ohm @ 1.1A, 18V 4V @ 900µA 14 nC @ 18 V +22V, -6V 184 pF @ 800 V - 35W (Tc) 175°C (TJ) Through Hole
SCT3120ALGC11

SCT3120ALGC11

SICFET N-CH 650V 21A TO247N

Rohm Semiconductor
3,901 -

RFQ

SCT3120ALGC11

Технические

Tube - Active N-Channel SiCFET (Silicon Carbide) 650 V 21A (Tc) 18V 156mOhm @ 6.7A, 18V 5.6V @ 3.33mA 38 nC @ 18 V +22V, -4V 460 pF @ 500 V - 103W (Tc) 175°C (TJ) Through Hole
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1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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