Rohm Semiconductor SCT2H12NYTB

Номер детали
SCT2H12NYTB
Производитель
Rohm Semiconductor
Категория:
Транзисторы - FET, MOSFET - одиночные
Упаковка
TO-268
Технические
Нахождение ЧипаSCT2H12NYTB.pdf
Описание
SICFET N-CH 1700V 4A TO268
Количество

Модуль$0

Извлечение$0

Оплата
payment
Доставка
payment

Product details

1. How to order SCT2H12NYTB on Нахождение Чипа?

Currently, Нахождение Чипа only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Нахождение Чипа guarantee that SCT2H12NYTB is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the SCT2H12NYTB. All suppliers must pass our qualification reviews before they can publish their products including SCT2H12NYTB on Нахождение Чипа; we pay more attention to the channels and quality of SCT2H12NYTB products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the SCT2H12NYTB price and inventory displayed accurate?

The price and inventory of SCT2H12NYTB fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of SCT2H12NYTB?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the SCT2H12NYTB we delivered, we will accept the replacement or return of the SCT2H12NYTB only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of SCT2H12NYTB.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as SCT2H12NYTB pin diagram, SCT2H12NYTB datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Изображение R8002ANJGTL R8002KNXC7G RCJ331N25TL RCJ451N20TL RX3G07CGNC16
Номер детали R8002ANJGTL R8002KNXC7G RCJ331N25TL RCJ451N20TL RX3G07CGNC16
Производитель Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor
Packaging Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT)
Series - - - - -
ProductStatus Active Active Active Active Active
FETType N-Channel N-Channel N-Channel N-Channel N-Channel
Technology SiCFET (Silicon Carbide) SiCFET (Silicon Carbide) SiCFET (Silicon Carbide) SiCFET (Silicon Carbide) SiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss) 1700 V 1700 V 1700 V 1700 V 1700 V
Current-ContinuousDrain(Id)@25°C 4A (Tc) 4A (Tc) 4A (Tc) 4A (Tc) 4A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 18V 18V 18V 18V 18V
RdsOn(Max)@IdVgs 1.5Ohm @ 1.1A, 18V 1.5Ohm @ 1.1A, 18V 1.5Ohm @ 1.1A, 18V 1.5Ohm @ 1.1A, 18V 1.5Ohm @ 1.1A, 18V
Vgs(th)(Max)@Id 4V @ 410µA 4V @ 410µA 4V @ 410µA 4V @ 410µA 4V @ 410µA
GateCharge(Qg)(Max)@Vgs 14 nC @ 18 V 14 nC @ 18 V 14 nC @ 18 V 14 nC @ 18 V 14 nC @ 18 V
Vgs(Max) +22V, -6V +22V, -6V +22V, -6V +22V, -6V +22V, -6V
InputCapacitance(Ciss)(Max)@Vds 184 pF @ 800 V 184 pF @ 800 V 184 pF @ 800 V 184 pF @ 800 V 184 pF @ 800 V
FETFeature - - - - -
PowerDissipation(Max) 44W (Tc) 44W (Tc) 44W (Tc) 44W (Tc) 44W (Tc)
OperatingTemperature 175°C (TJ) 175°C (TJ) 175°C (TJ) 175°C (TJ) 175°C (TJ)
MountingType Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount

SCT2H12NYTB Актуальная информация

Включенные следующие детали "SCT2H12NYTB" ISSI, Интегрированные Силиконовые Решения Инк SCT2H12NYTB.

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