Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTA26P20P-TRL

IXTA26P20P-TRL

MOSFET P-CH 200V 26A TO263

IXYS
3,635 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Polar Active P-Channel MOSFET (Metal Oxide) 200 V 26A (Tc) 10V 170mOhm @ 13A, 10V 4V @ 250µA 56 nC @ 10 V ±20V 2740 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA48P05T

IXTA48P05T

MOSFET P-CH 50V 48A TO263

IXYS
3,482 -

RFQ

IXTA48P05T

Технические

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 50 V 48A (Tc) 10V 30mOhm @ 24A, 10V 4.5V @ 250µA 53 nC @ 10 V ±15V 3660 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA130N10T

IXTA130N10T

MOSFET N-CH 100V 130A TO263

IXYS
3,559 -

RFQ

IXTA130N10T

Технические

Tube Trench Active N-Channel MOSFET (Metal Oxide) 100 V 130A (Tc) 10V 9.1mOhm @ 25A, 10V 4.5V @ 250µA 104 nC @ 10 V ±30V 5080 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTP36N30P

IXTP36N30P

MOSFET N-CH 300V 36A TO220AB

IXYS
2,556 -

RFQ

IXTP36N30P

Технические

Tube PolarHT™ Active N-Channel MOSFET (Metal Oxide) 300 V 36A (Tc) 10V 110mOhm @ 18A, 10V 5.5V @ 250µA 70 nC @ 10 V ±30V 2250 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP86N20T

IXTP86N20T

MOSFET N-CH 200V 86A TO220AB

IXYS
2,761 -

RFQ

IXTP86N20T

Технические

Tube Trench Active N-Channel MOSFET (Metal Oxide) 200 V 86A (Tc) 10V 29mOhm @ 500mA, 10V 5V @ 1mA 90 nC @ 10 V ±30V 4500 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTP52P10P

IXTP52P10P

MOSFET P-CH 100V 52A TO220AB

IXYS
3,178 -

RFQ

IXTP52P10P

Технические

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 100 V 52A (Tc) 10V 50mOhm @ 52A, 10V 4.5V @ 250µA 60 nC @ 10 V ±20V 2845 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA36P15P

IXTA36P15P

MOSFET P-CH 150V 36A TO263

IXYS
3,388 -

RFQ

IXTA36P15P

Технические

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 150 V 36A (Tc) 10V 110mOhm @ 18A, 10V 4.5V @ 250µA 55 nC @ 10 V ±20V 3100 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA2R4N120P

IXTA2R4N120P

MOSFET N-CH 1200V 2.4A TO263

IXYS
2,572 -

RFQ

IXTA2R4N120P

Технические

Tube Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 2.4A (Tc) 10V 7.5Ohm @ 500mA, 10V 4.5V @ 250µA 37 nC @ 10 V ±20V 1207 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTP44P15T

IXTP44P15T

MOSFET P-CH 150V 44A TO220AB

IXYS
2,677 -

RFQ

IXTP44P15T

Технические

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 150 V 44A (Tc) 10V 65mOhm @ 500mA, 10V 4V @ 250µA 175 nC @ 10 V ±15V 13400 pF @ 25 V - 298W (Tc) - Through Hole
IXTH160N10T

IXTH160N10T

MOSFET N-CH 100V 160A TO247

IXYS
174 -

RFQ

IXTH160N10T

Технические

Tube Trench Active N-Channel MOSFET (Metal Oxide) 100 V 160A (Tc) 10V 7mOhm @ 25A, 10V 4.5V @ 250µA 132 nC @ 10 V ±30V 6600 pF @ 25 V - 430W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTA120P065T

IXTA120P065T

MOSFET P-CH 65V 120A TO263

IXYS
3,892 -

RFQ

IXTA120P065T

Технические

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 65 V 120A (Tc) 10V 10mOhm @ 500mA, 10V 4V @ 250µA 185 nC @ 10 V ±15V 13200 pF @ 25 V - 298W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTQ10P50P

IXTQ10P50P

MOSFET P-CH 500V 10A TO3P

IXYS
3,536 -

RFQ

IXTQ10P50P

Технические

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 500 V 10A (Tc) 10V 1Ohm @ 5A, 10V 4V @ 250µA 50 nC @ 10 V ±20V 2840 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH10N100P

IXFH10N100P

MOSFET N-CH 1000V 10A TO247AD

IXYS
2,289 -

RFQ

IXFH10N100P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 10A (Tc) 10V 1.4Ohm @ 5A, 10V 6.5V @ 1mA 56 nC @ 10 V ±30V 3030 pF @ 25 V - 380W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH96P085T

IXTH96P085T

MOSFET P-CH 85V 96A TO247

IXYS
2,059 -

RFQ

IXTH96P085T

Технические

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 85 V 96A (Tc) 10V 13mOhm @ 500mA, 10V 4V @ 250µA 180 nC @ 10 V ±15V 13100 pF @ 25 V - 298W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP3N120

IXTP3N120

MOSFET N-CH 1200V 3A TO220AB

IXYS
2,030 -

RFQ

IXTP3N120

Технические

Tube HiPerFET™ Active N-Channel MOSFET (Metal Oxide) 1200 V 3A (Tc) 10V 4.5Ohm @ 500mA, 10V 5V @ 250µA 42 nC @ 10 V ±20V 1350 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA3N120

IXTA3N120

MOSFET N-CH 1200V 3A TO263

IXYS
2,375 -

RFQ

IXTA3N120

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 1200 V 3A (Tc) 10V 4.5Ohm @ 1.5A, 10V 5V @ 250µA 42 nC @ 10 V ±20V 1350 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTH52P10P

IXTH52P10P

MOSFET P-CH 100V 52A TO247

IXYS
3,782 -

RFQ

IXTH52P10P

Технические

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 100 V 52A (Tc) 10V 50mOhm @ 52A, 10V 4.5V @ 250µA 60 nC @ 10 V ±20V 2845 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFP3N120

IXFP3N120

MOSFET N-CH 1200V 3A TO220AB

IXYS
200 -

RFQ

IXFP3N120

Технические

Tube HiPerFET™ Active N-Channel MOSFET (Metal Oxide) 1200 V 3A (Tc) 10V 4.5Ohm @ 500mA, 10V 5V @ 1.5mA 39 nC @ 10 V ±20V 1050 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFP56N30X3

IXFP56N30X3

MOSFET N-CH 300V 56A TO220AB

IXYS
3,587 -

RFQ

IXFP56N30X3

Технические

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 300 V 56A (Tc) 10V 27mOhm @ 28A, 10V 4.5V @ 1.5mA 56 nC @ 10 V ±20V 3750 pF @ 25 V - 320W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH26P20P

IXTH26P20P

MOSFET P-CH 200V 26A TO247

IXYS
3,673 -

RFQ

IXTH26P20P

Технические

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 200 V 26A (Tc) 10V 170mOhm @ 13A, 10V 4V @ 250µA 56 nC @ 10 V ±20V 2740 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
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