Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTP86N20X4

IXTP86N20X4

MOSFET 200V 86A N-CH ULTRA TO220

IXYS
3,508 -

RFQ

IXTP86N20X4

Технические

Tube Ultra X4 Active N-Channel MOSFET (Metal Oxide) 200 V 86A (Tc) 10V 13mOhm @ 43A, 10V 4.5V @ 250µA 70 nC @ 10 V ±20V 2250 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFH44N50P

IXFH44N50P

MOSFET N-CH 500V 44A TO247AD

IXYS
2,173 -

RFQ

IXFH44N50P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 500 V 44A (Tc) 10V 140mOhm @ 22A, 10V 5V @ 4mA 98 nC @ 10 V ±30V 5440 pF @ 25 V - 658W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTQ88N30P

IXTQ88N30P

MOSFET N-CH 300V 88A TO3P

IXYS
3,937 -

RFQ

IXTQ88N30P

Технические

Tube Polar Active N-Channel MOSFET (Metal Oxide) 300 V 88A (Tc) 10V 40mOhm @ 44A, 10V 5V @ 250µA 180 nC @ 10 V ±20V 6300 pF @ 25 V - 600W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH12N100F

IXFH12N100F

MOSFET N-CH 1000V 12A TO247AD

IXYS
2,364 -

RFQ

IXFH12N100F

Технические

Tube HiPerFET™, F Class Active N-Channel MOSFET (Metal Oxide) 1000 V 12A (Tc) 10V 1.05Ohm @ 6A, 10V 5.5V @ 4mA 77 nC @ 10 V ±20V 2700 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH24P20

IXTH24P20

MOSFET P-CH 200V 24A TO247

IXYS
3,298 -

RFQ

IXTH24P20

Технические

Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 24A (Tc) 10V 150mOhm @ 500mA, 10V 5V @ 250µA 150 nC @ 10 V ±20V 4200 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA3N150HV

IXTA3N150HV

MOSFET N-CH 1500V 3A TO263

IXYS
3,097 -

RFQ

IXTA3N150HV

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 1500 V 3A (Tc) 10V 7.3Ohm @ 1.5A, 10V 5V @ 250µA 38.6 nC @ 10 V ±30V 1375 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA94N20X4

IXTA94N20X4

MOSFET 200V 94A N-CH ULTRA TO263

IXYS
3,914 -

RFQ

IXTA94N20X4

Технические

Tube Ultra X4 Active N-Channel MOSFET (Metal Oxide) 200 V 94A (Tc) 10V 10.6mOhm @ 47A, 10V 4.5V @ 250µA 77 nC @ 10 V ±20V 5050 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTT90P10P

IXTT90P10P

MOSFET P-CH 100V 90A TO268

IXYS
3,515 -

RFQ

IXTT90P10P

Технические

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 100 V 90A (Tc) 10V 25mOhm @ 45A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 5800 pF @ 25 V - 462W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTT16N20D2

IXTT16N20D2

MOSFET N-CH 200V 16A TO268

IXYS
3,285 -

RFQ

IXTT16N20D2

Технические

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 200 V 16A (Tc) - 73mOhm @ 8A, 0V - 208 nC @ 5 V ±20V 5500 pF @ 25 V Depletion Mode 695W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTH16P60P

IXTH16P60P

MOSFET P-CH 600V 16A TO247

IXYS
3,880 -

RFQ

IXTH16P60P

Технические

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 720mOhm @ 500mA, 10V 4.5V @ 250µA 92 nC @ 10 V ±20V 5120 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK360N10T

IXFK360N10T

MOSFET N-CH 100V 360A TO264AA

IXYS
3,752 -

RFQ

IXFK360N10T

Технические

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 100 V 360A (Tc) 10V 2.9mOhm @ 100A, 10V 5V @ 3mA 525 nC @ 10 V ±20V 33000 pF @ 25 V - 1250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFT94N30P3

IXFT94N30P3

MOSFET N-CH 300V 94A TO268

IXYS
231 -

RFQ

IXFT94N30P3

Технические

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 300 V 94A (Tc) 10V 36mOhm @ 47A, 10V 5V @ 4mA 102 nC @ 10 V ±20V 5510 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTT16N10D2

IXTT16N10D2

MOSFET N-CH 100V 16A TO268

IXYS
2,532 -

RFQ

IXTT16N10D2

Технические

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 100 V 16A (Tc) 0V 64mOhm @ 8A, 0V - 225 nC @ 5 V ±20V 5700 pF @ 25 V Depletion Mode 830W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTH80N20L

IXTH80N20L

MOSFET N-CH 200V 80A TO247

IXYS
3,423 -

RFQ

IXTH80N20L

Технические

Tube Linear Active N-Channel MOSFET (Metal Oxide) 200 V 80A (Tc) 10V 32mOhm @ 40A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 6160 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH400N075T2

IXFH400N075T2

MOSFET N-CH 75V 400A TO247AD

IXYS
2,553 -

RFQ

IXFH400N075T2

Технические

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 75 V 400A (Tc) 10V 2.3mOhm @ 100A, 10V 4V @ 250µA 420 nC @ 10 V ±20V 24000 pF @ 25 V - 1000W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFK520N075T2

IXFK520N075T2

MOSFET N-CH 75V 520A TO264AA

IXYS
2,006 -

RFQ

IXFK520N075T2

Технические

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 75 V 520A (Tc) 10V 2.2mOhm @ 100A, 10V 5V @ 8mA 545 nC @ 10 V ±20V 41000 pF @ 25 V - 1250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTH180N10T

IXTH180N10T

MOSFET N-CH 100V 180A TO247

IXYS
264 -

RFQ

IXTH180N10T

Технические

Tube Trench Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 6.4mOhm @ 25A, 10V 4.5V @ 250µA 151 nC @ 10 V ±30V 6900 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTH16N20D2

IXTH16N20D2

MOSFET N-CH 200V 16A TO247

IXYS
2,035 -

RFQ

IXTH16N20D2

Технические

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 200 V 16A (Tc) - 73mOhm @ 8A, 0V - 208 nC @ 5 V ±20V 5500 pF @ 25 V Depletion Mode 695W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX120N25P

IXFX120N25P

MOSFET N-CH 250V 120A PLUS247-3

IXYS
3,351 -

RFQ

IXFX120N25P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 250 V 120A (Tc) 10V 24mOhm @ 60A, 10V 5V @ 4mA 185 nC @ 10 V ±20V 8000 pF @ 25 V - 700W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFH180N20X3

IXFH180N20X3

MOSFET N-CH 200V 180A TO247

IXYS
2,683 -

RFQ

IXFH180N20X3

Технические

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 200 V 180A (Tc) 10V 7.5mOhm @ 90A, 10V 4.5V @ 4mA 154 nC @ 10 V ±20V 10300 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) Through Hole
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