Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFC110N10P

IXFC110N10P

MOSFET N-CH 100V 60A ISOPLUS220

IXYS
2,301 -

RFQ

IXFC110N10P

Технические

Box HiPerFET™, PolarHT™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 10V 17mOhm @ 55A, 10V 5V @ 4mA 110 nC @ 10 V ±20V 3550 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFC12N80P

IXFC12N80P

MOSFET N-CH 800V 7A ISOPLUS220

IXYS
2,847 -

RFQ

IXFC12N80P

Технические

Tube HiPerFET™, PolarHT™ Obsolete N-Channel MOSFET (Metal Oxide) 800 V 7A (Tc) 10V 930mOhm @ 6A, 10V 5.5V @ 2.5mA 51 nC @ 10 V ±30V 2800 pF @ 25 V - 120W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFC14N80P

IXFC14N80P

MOSFET N-CH 800V 8A ISOPLUS220

IXYS
3,333 -

RFQ

IXFC14N80P

Технические

Tube HiPerFET™, PolarHT™ Obsolete N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 770mOhm @ 7A, 10V 5.5V @ 4mA 61 nC @ 10 V ±30V 3900 pF @ 25 V - 130W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFC16N80P

IXFC16N80P

MOSFET N-CH 800V 9A ISOPLUS220

IXYS
2,122 -

RFQ

IXFC16N80P

Технические

Tube HiPerFET™, PolarHT™ Obsolete N-Channel MOSFET (Metal Oxide) 800 V 9A (Tc) 10V 650mOhm @ 8A, 10V 5V @ 4mA 71 nC @ 10 V ±30V 4600 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFC20N80P

IXFC20N80P

MOSFET N-CH 800V 11A ISOPLUS220

IXYS
2,611 -

RFQ

IXFC20N80P

Технические

Tube HiPerFET™, PolarHT™ Obsolete N-Channel MOSFET (Metal Oxide) 800 V 11A (Tc) 10V 500mOhm @ 10A, 10V 5V @ 4mA 85 nC @ 10 V ±30V 4680 pF @ 25 V - 166W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFC52N30P

IXFC52N30P

MOSFET N-CH 300V 24A ISOPLUS220

IXYS
2,691 -

RFQ

IXFC52N30P

Технические

Box PolarHT™ HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 300 V 24A (Tc) 10V 75mOhm @ 26A, 10V 5V @ 4mA 110 nC @ 10 V ±20V 3490 pF @ 25 V - 100W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFC74N20P

IXFC74N20P

MOSFET N-CH 200V 35A ISOPLUS220

IXYS
3,622 -

RFQ

IXFC74N20P

Технические

Box PolarHT™ HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 200 V 35A (Tc) 10V 36mOhm @ 37A, 10V 5V @ 4mA 107 nC @ 10 V ±20V 3300 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFC96N15P

IXFC96N15P

MOSFET N-CH 150V 42A ISOPLUS220

IXYS
2,035 -

RFQ

IXFC96N15P

Технические

Box PolarHT™ HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 150 V 42A (Tc) 10V 26mOhm @ 48A, 10V 5V @ 4mA 110 nC @ 10 V ±20V 3500 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFE23N100

IXFE23N100

MOSFET N-CH 1000V 21A SOT227B

IXYS
3,310 -

RFQ

IXFE23N100

Технические

Box HiPerFET™ Active N-Channel MOSFET (Metal Oxide) 1000 V 21A (Tc) 10V 430mOhm @ 11.5A, 10V 5V @ 8mA 250 nC @ 10 V ±20V 7000 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFE34N100

IXFE34N100

MOSFET N-CH 1000V 30A SOT227B

IXYS
2,444 -

RFQ

IXFE34N100

Технические

Box HiPerFET™ Active N-Channel MOSFET (Metal Oxide) 1000 V 30A (Tc) 10V 280mOhm @ 17A, 10V 5.5V @ 8mA 455 nC @ 10 V ±20V 15000 pF @ 25 V - 580W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFE50N50

IXFE50N50

MOSFET N-CH 500V 47A SOT227B

IXYS
2,290 -

RFQ

IXFE50N50

Технические

Box HiPerFET™ Active N-Channel MOSFET (Metal Oxide) 500 V 47A (Tc) 10V 100mOhm @ 25A, 10V 4.5V @ 8mA 330 nC @ 10 V ±20V 9400 pF @ 25 V - 500W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
IXFF24N100

IXFF24N100

MOSFET N-CH 1000V 22A I4PAC

IXYS
2,119 -

RFQ

IXFF24N100

Технические

Tube HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 22A (Tc) 10V 390mOhm @ 15A, 10V 5V @ 8mA 250 nC @ 10 V ±20V - - - -55°C ~ 150°C (TJ) Through Hole
IXFH12N120

IXFH12N120

MOSFET N-CH 1200V 12A TO247AD

IXYS
3,724 -

RFQ

IXFH12N120

Технические

Tube HiPerFET™ Active N-Channel MOSFET (Metal Oxide) 1200 V 12A (Tc) 10V 1.4Ohm @ 500mA, 10V 5V @ 4mA 95 nC @ 10 V ±30V 3400 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH13N80Q

IXFH13N80Q

MOSFET N-CH 800V 13A TO247AD

IXYS
2,263 -

RFQ

IXFH13N80Q

Технические

Tube HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 800 V 13A (Tc) 10V 700mOhm @ 6.5A, 10V 4.5V @ 4mA 90 nC @ 10 V ±20V 3250 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH14N100Q2

IXFH14N100Q2

MOSFET N-CH 1000V 14A TO247AD

IXYS
2,142 -

RFQ

IXFH14N100Q2

Технические

Tube HiPerFET™, Q2 Class Not For New Designs N-Channel MOSFET (Metal Oxide) 1000 V 14A (Tc) 10V 950mOhm @ 7A, 10V 5.5V @ 4mA 83 nC @ 10 V ±30V 2800 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH15N100Q

IXFH15N100Q

MOSFET N-CH 1000V 15A TO247AD

IXYS
3,922 -

RFQ

IXFH15N100Q

Технические

Tube HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 15A (Tc) 10V 700mOhm @ 500mA, 10V 5V @ 4mA 170 nC @ 10 V ±20V 4500 pF @ 25 V - 360W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH16N90Q

IXFH16N90Q

MOSFET N-CH 900V 16A TO247AD

IXYS
3,186 -

RFQ

IXFH16N90Q

Технические

Tube HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 900 V 16A (Tc) 10V 650mOhm @ 8A, 10V 5V @ 4mA 170 nC @ 10 V ±20V 4000 pF @ 25 V - 360W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH17N80Q

IXFH17N80Q

MOSFET N-CH 800V 17A TO247AD

IXYS
2,162 -

RFQ

IXFH17N80Q

Технические

Tube HiPerFET™, Q Class Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Tc) 10V 600mOhm @ 500mA, 10V 4.5V @ 4mA 95 nC @ 10 V ±20V 3600 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH20N60Q

IXFH20N60Q

MOSFET N-CH 600V 20A TO247AD

IXYS
3,254 -

RFQ

IXFH20N60Q

Технические

Tube HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 350mOhm @ 10A, 10V 4.5V @ 4mA 90 nC @ 10 V ±30V 3300 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH21N50Q

IXFH21N50Q

MOSFET N-CH 500V 21A TO247AD

IXYS
3,782 -

RFQ

IXFH21N50Q

Технические

Tube HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 21A (Tc) 10V 250mOhm @ 10.5A, 10V 4.5V @ 4mA 84 nC @ 10 V ±30V 3000 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) Through Hole
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