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Транзисторы - FET, MOSFET - одиночные
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IXUV170N075MOSFET N-CH 75V 175A PLUS220 IXYS |
2,182 | - |
RFQ |
Box | - | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 175A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | |
|
IXUV170N075SMOSFET N-CH 75V 175A PLUS-220SMD IXYS |
3,082 | - |
RFQ |
Технические |
Box | - | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 175A (Tc) | - | - | - | - | - | - | - | - | - | Surface Mount |
|
|
VMO150-01P1MOSFET N-CH 100V 165A ECO-PAC2 IXYS |
2,863 | - |
RFQ |
Технические |
Box | HiPerFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 165A (Tc) | 10V | 8mOhm @ 90A, 10V | 4V @ 8mA | 400 nC @ 10 V | ±20V | 9400 pF @ 25 V | - | 400W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount |
|
|
VMO40-05P1MOSFET N-CH ECO-PAC2 IXYS |
3,070 | - |
RFQ |
Box | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | - | - | - | - | - | - | - | - | - | - | - | Chassis Mount | |
|
|
VMO80-05P1MOSFET N-CH ECO-PAC2 IXYS |
2,759 | - |
RFQ |
Box | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | - | - | - | - | - | - | - | - | - | - | - | Chassis Mount | |
|
IXUN350N10MOSFET N-CH 100V 350A SOT-227B IXYS |
2,011 | - |
RFQ |
Технические |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 350A (Tc) | 10V | 2.5mOhm @ 175A, 10V | 4V @ 3mA | 640 nC @ 10 V | ±20V | 27000 pF @ 25 V | - | 830W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
|
IXTY08N50D2-TRLMOSFET N-CH 500V 800MA TO252AA IXYS |
2,196 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | Depletion | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 800mA (Tj) | 0V | 4.6Ohm @ 400mA, 0V | 4.5V @ 25µA | 12.7 nC @ 5 V | ±20V | 312 pF @ 25 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
IXFH9N80MOSFET N-CH 800V 9A TO247AD IXYS |
3,776 | - |
RFQ |
Технические |
Tube | HiPerFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 9A (Tc) | 10V | 900mOhm @ 500mA, 10V | 4.5V @ 2.5mA | 130 nC @ 10 V | ±20V | 2600 pF @ 25 V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
IXTY2N65X2MOSFET N-CH 650V 2A TO252 IXYS |
2,273 | - |
RFQ |
Технические |
Tube | Ultra X2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 2A (Tc) | 10V | 2.3Ohm @ 1A, 10V | 5V @ 250µA | 4.3 nC @ 10 V | ±30V | 180 pF @ 25 V | - | 55W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IXTP100N04T2MOSFET N-CH 40V 100A TO220AB IXYS |
2,303 | - |
RFQ |
Технические |
Tube | TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 10V | 7mOhm @ 25A, 10V | 4V @ 250µA | 25.5 nC @ 10 V | ±20V | 2690 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
|
IXTP08N50D2MOSFET N-CH 500V 800MA TO220AB IXYS |
3,543 | - |
RFQ |
Технические |
Tube | Depletion | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 800mA (Tc) | - | 4.6Ohm @ 400mA, 0V | - | 12.7 nC @ 5 V | ±20V | 312 pF @ 25 V | Depletion Mode | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
IXTY44N10TMOSFET N-CH 100V 44A TO252 IXYS |
2,068 | - |
RFQ |
Технические |
Tube | Trench | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 44A (Tc) | 10V | 30mOhm @ 22A, 10V | 4.5V @ 25µA | 33 nC @ 10 V | ±30V | 1262 pF @ 25 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
IXTP70N075T2MOSFET N-CH 75V 70A TO220AB IXYS |
3,930 | - |
RFQ |
Технические |
Tube | TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 70A (Tc) | 10V | 12mOhm @ 25A, 10V | 4V @ 250µA | 46 nC @ 10 V | ±20V | 2725 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
IXTA08N50D2MOSFET N-CH 500V 800MA TO263 IXYS |
3,371 | - |
RFQ |
Технические |
Tube | Depletion | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 800mA (Tc) | - | 4.6Ohm @ 400mA, 0V | - | 12.7 nC @ 5 V | ±20V | 312 pF @ 25 V | Depletion Mode | 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IXTP60N10TMOSFET N-CH 100V 60A TO220AB IXYS |
2,337 | - |
RFQ |
Технические |
Tube | Trench | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 60A (Tc) | 10V | 18mOhm @ 25A, 10V | 4.5V @ 50µA | 49 nC @ 10 V | ±30V | 2650 pF @ 25 V | - | 176W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
|
IXTA60N10TMOSFET N-CH 100V 60A TO263 IXYS |
2,691 | - |
RFQ |
Технические |
Tube | Trench | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 60A (Tc) | 10V | 18mOhm @ 25A, 10V | 4.5V @ 50µA | 49 nC @ 10 V | ±30V | 2650 pF @ 25 V | - | 176W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
IXTA110N055T2MOSFET N-CH 55V 110A TO263 IXYS |
2,136 | - |
RFQ |
Технические |
Tube | TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 110A (Tc) | 10V | 6.6mOhm @ 25A, 10V | 4V @ 250µA | 57 nC @ 10 V | ±20V | 3060 pF @ 25 V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
IXTP80N10TMOSFET N-CH 100V 80A TO220AB IXYS |
2,316 | - |
RFQ |
Технические |
Tube | Trench | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 80A (Tc) | 10V | 14mOhm @ 25A, 10V | 5V @ 100µA | 60 nC @ 10 V | ±20V | 3040 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
|
IXTY08N100PMOSFET N-CH 1000V 800MA TO252 IXYS |
3,658 | - |
RFQ |
Технические |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 800mA (Tc) | 10V | 20Ohm @ 500mA, 10V | 4V @ 50µA | 11.3 nC @ 10 V | ±20V | 240 pF @ 25 V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IXTP130N10TMOSFET N-CH 100V 130A TO220AB IXYS |
2,949 | - |
RFQ |
Технические |
Tube | Trench | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 130A (Tc) | 10V | 9.1mOhm @ 25A, 10V | 4.5V @ 250µA | 104 nC @ 10 V | ±30V | 5080 pF @ 25 V | - | 360W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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