Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTA80N10T

IXTA80N10T

MOSFET N-CH 100V 80A TO263

IXYS
2,531 -

RFQ

IXTA80N10T

Технические

Tube Trench Active N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 10V 14mOhm @ 25A, 10V 5V @ 100µA 60 nC @ 10 V ±20V 3040 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTP3N100D2

IXTP3N100D2

MOSFET N-CH 1000V 3A TO220AB

IXYS
2,581 -

RFQ

IXTP3N100D2

Технические

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 1000 V 3A (Tc) - 5.5Ohm @ 1.5A, 0V - 37.5 nC @ 5 V ±20V 1020 pF @ 25 V Depletion Mode 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP48N20T

IXTP48N20T

MOSFET N-CH 200V 48A TO220AB

IXYS
2,258 -

RFQ

IXTP48N20T

Технические

Tube Trench Active N-Channel MOSFET (Metal Oxide) 200 V 48A (Tc) 10V 50mOhm @ 24A, 10V 4.5V @ 250µA 60 nC @ 10 V ±30V 3000 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTA200N055T2

IXTA200N055T2

MOSFET N-CH 55V 200A TO263

IXYS
2,901 -

RFQ

IXTA200N055T2

Технические

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 55 V 200A (Tc) 10V 4.2mOhm @ 50A, 10V 4V @ 250µA 109 nC @ 10 V ±20V 6800 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFA4N100P

IXFA4N100P

MOSFET N-CH 1000V 4A TO263

IXYS
2,401 -

RFQ

IXFA4N100P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 4A (Tc) 10V 3.3Ohm @ 2A, 10V 5V @ 250µA 26 nC @ 10 V ±20V 1456 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTP90N15T

IXTP90N15T

MOSFET N-CH 150V 90A TO220AB

IXYS
3,526 -

RFQ

IXTP90N15T

Технические

Tube Trench Active N-Channel MOSFET (Metal Oxide) 150 V 90A (Tc) 10V 20mOhm @ 45A, 10V 4.5V @ 1mA 80 nC @ 10 V ±30V 4100 pF @ 25 V - 455W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTA76P10T-TRL

IXTA76P10T-TRL

MOSFET P-CH 100V 76A TO263

IXYS
3,534 -

RFQ

Tape & Reel (TR),Cut Tape (CT) TrenchP™ Active P-Channel MOSFET (Metal Oxide) 100 V 76A (Tc) 10V 25mOhm @ 38A, 10V 4V @ 250µA 197 nC @ 10 V ±15V 13700 pF @ 25 V - 298W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFP26N30X3

IXFP26N30X3

MOSFET N-CH 300V 26A TO220AB

IXYS
2,685 -

RFQ

IXFP26N30X3

Технические

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 300 V 26A (Tc) 10V 66mOhm @ 13A, 10V 4.5V @ 500µA 22 nC @ 10 V ±20V 1465 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFA26N30X3

IXFA26N30X3

MOSFET N-CH 300V 26A TO263AA

IXYS
2,760 -

RFQ

IXFA26N30X3

Технические

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 300 V 26A (Tc) 10V 66mOhm @ 13A, 10V 4.5V @ 500µA 22 nC @ 10 V ±20V 1465 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTP160N10T

IXTP160N10T

MOSFET N-CH 100V 160A TO220AB

IXYS
2,035 -

RFQ

IXTP160N10T

Технические

Tube Trench Active N-Channel MOSFET (Metal Oxide) 100 V 160A (Tc) 10V 7mOhm @ 25A, 10V 4.5V @ 250µA 132 nC @ 10 V ±30V 6600 pF @ 25 V - 430W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFP76N15T2

IXFP76N15T2

MOSFET N-CH 150V 76A TO220AB

IXYS
2,646 -

RFQ

IXFP76N15T2

Технические

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 150 V 76A (Tc) 10V 20mOhm @ 38A, 10V 4.5V @ 250µA 97 nC @ 10 V ±20V 5800 pF @ 25 V - 350W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTA62N15P

IXTA62N15P

MOSFET N-CH 150V 62A TO263

IXYS
3,408 -

RFQ

IXTA62N15P

Технические

Tube Polar Active N-Channel MOSFET (Metal Oxide) 150 V 62A (Tc) 10V 40mOhm @ 31A, 10V 5.5V @ 250µA 70 nC @ 10 V ±20V 2250 pF @ 25 V - 350W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTA36N30P

IXTA36N30P

MOSFET N-CH 300V 36A TO263

IXYS
2,205 -

RFQ

IXTA36N30P

Технические

Tube PolarHT™ Active N-Channel MOSFET (Metal Oxide) 300 V 36A (Tc) 10V 110mOhm @ 18A, 10V 5.5V @ 250µA 70 nC @ 10 V ±30V 2250 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA75N10P

IXTA75N10P

MOSFET N-CH 100V 75A TO263

IXYS
3,184 -

RFQ

IXTA75N10P

Технические

Tube Polar Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 25mOhm @ 500mA, 10V 5.5V @ 250µA 74 nC @ 10 V ±20V 2250 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTP50N20P

IXTP50N20P

MOSFET N-CH 200V 50A TO220AB

IXYS
300 -

RFQ

IXTP50N20P

Технические

Tube Polar Active N-Channel MOSFET (Metal Oxide) 200 V 50A (Tc) 10V 60mOhm @ 50A, 10V 5V @ 250µA 70 nC @ 10 V ±20V 2720 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTA6N50D2-TRL

IXTA6N50D2-TRL

MOSFET N-CH 500V 6A TO263

IXYS
2,736 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Depletion Active N-Channel MOSFET (Metal Oxide) 500 V 6A (Tj) 0V 500mOhm @ 3A, 0V 4.5V @ 250µA 96 nC @ 5 V ±20V 2800 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFK30N110P

IXFK30N110P

MOSFET N-CH 1100V 30A TO264AA

IXYS
3,433 -

RFQ

IXFK30N110P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1100 V 30A (Tc) 10V 360mOhm @ 15A, 10V 6.5V @ 1mA 235 nC @ 10 V ±30V 13600 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFL30N120P

IXFL30N120P

MOSFET N-CH 1200V 18A I5PAK

IXYS
3,339 -

RFQ

IXFL30N120P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 18A (Tc) 10V 380mOhm @ 15A, 10V 6.5V @ 1mA 310 nC @ 10 V ±30V 19000 pF @ 25 V - 357W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFL44N100P

IXFL44N100P

MOSFET N-CH 1000V 22A ISOPLUS264

IXYS
2,398 -

RFQ

IXFL44N100P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 22A (Tc) 10V 240mOhm @ 22A, 10V 6.5V @ 1mA 305 nC @ 10 V ±30V 19000 pF @ 25 V - 357W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFN30N110P

IXFN30N110P

MOSFET N-CH 1100V 25A SOT-227B

IXYS
3,974 -

RFQ

IXFN30N110P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1100 V 25A (Tc) 10V 360mOhm @ 15A, 10V 6.5V @ 1mA 235 nC @ 10 V ±30V 13600 pF @ 25 V - 695W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
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