Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFP12N65X2

IXFP12N65X2

MOSFET N-CH 650V 12A TO220AB

IXYS
3,920 -

RFQ

IXFP12N65X2

Технические

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 310mOhm @ 6A, 10V 5V @ 250µA 18.5 nC @ 10 V ±30V 1134 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFP12N65X2M

IXFP12N65X2M

MOSFET N-CH 650V 12A TO220

IXYS
300 -

RFQ

IXFP12N65X2M

Технические

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 310mOhm @ 6A, 10V 5V @ 250µA 18.5 nC @ 10 V ±30V 1134 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK74N50P2

IXFK74N50P2

MOSFET N-CH 500V 74A TO264AA

IXYS
2,920 -

RFQ

IXFK74N50P2

Технические

Tube HiPerFET™, PolarP2™ Active N-Channel MOSFET (Metal Oxide) 500 V 74A (Tc) 10V 77mOhm @ 500mA, 10V 5V @ 4mA 165 nC @ 10 V ±30V 9900 pF @ 25 V - 1400W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX74N50P2

IXFX74N50P2

MOSFET N-CH 500V 74A PLUS247-3

IXYS
2,719 -

RFQ

IXFX74N50P2

Технические

Tube HiPerFET™, PolarHV™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 74A (Tc) 10V 77mOhm @ 500mA, 10V 5V @ 4mA 165 nC @ 10 V ±30V 9900 pF @ 25 V - 1400W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFB120N50P2

IXFB120N50P2

MOSFET N-CH 500V 120A PLUS264

IXYS
2,835 -

RFQ

IXFB120N50P2

Технические

Tube HiPerFET™, PolarHV™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 120A (Tc) 10V 43mOhm @ 500mA, 10V 5V @ 8mA 300 nC @ 10 V ±30V 19000 pF @ 25 V - 1890W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFP220N06T3

IXFP220N06T3

MOSFET N-CH 60V 220A TO220AB

IXYS
3,673 -

RFQ

IXFP220N06T3

Технические

Tube HiperFET™, TrenchT3™ Active N-Channel MOSFET (Metal Oxide) 60 V 220A (Tc) 10V 4mOhm @ 100A, 10V 4V @ 250µA 136 nC @ 10 V ±20V 8500 pF @ 25 V - 440W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTQ60N20T

IXTQ60N20T

MOSFET N-CH 200V 60A TO3P

IXYS
3,795 -

RFQ

Tube Trench Active N-Channel MOSFET (Metal Oxide) 200 V 60A (Tc) 10V 40mOhm @ 30A, 10V 5V @ 250µA 73 nC @ 10 V ±20V 4530 pF @ 25 V - 500W (Ta) -55°C ~ 175°C (TJ) Through Hole
IXTQ16N50P

IXTQ16N50P

MOSFET N-CH 500V 16A TO3P

IXYS
3,418 -

RFQ

IXTQ16N50P

Технические

Tube Polar Active N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 400mOhm @ 8A, 10V 5.5V @ 250µA 43 nC @ 10 V ±30V 2250 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTQ75N10P

IXTQ75N10P

MOSFET N-CH 100V 75A TO3P

IXYS
3,463 -

RFQ

IXTQ75N10P

Технические

Tube Polar Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 25mOhm @ 500mA, 10V 5.5V @ 250µA 74 nC @ 10 V ±20V 2250 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTP1R6N50D2

IXTP1R6N50D2

MOSFET N-CH 500V 1.6A TO220AB

IXYS
2,268 -

RFQ

IXTP1R6N50D2

Технические

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 500 V 1.6A (Tc) - 2.3Ohm @ 800mA, 0V - 23.7 nC @ 5 V ±20V 645 pF @ 25 V Depletion Mode 100W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFA38N30X3

IXFA38N30X3

MOSFET N-CH 300V 38A TO263

IXYS
3,319 -

RFQ

IXFA38N30X3

Технические

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 300 V 38A (Tc) 10V 50mOhm @ 19A, 10V 4.5V @ 1mA 35 nC @ 10 V ±20V 2240 pF @ 25 V - 240W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTQ74N20P

IXTQ74N20P

MOSFET N-CH 200V 74A TO3P

IXYS
3,067 -

RFQ

IXTQ74N20P

Технические

Tube Polar Active N-Channel MOSFET (Metal Oxide) 200 V 74A (Tc) 10V 34mOhm @ 37A, 10V 5V @ 250µA 107 nC @ 10 V ±20V 3300 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTQ76N25T

IXTQ76N25T

MOSFET N-CH 250V 76A TO3P

IXYS
3,259 -

RFQ

IXTQ76N25T

Технические

Tube Trench Active N-Channel MOSFET (Metal Oxide) 250 V 76A (Tc) 10V 39mOhm @ 500mA, 10V 5V @ 1mA 92 nC @ 10 V ±30V 4500 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH42N60P3

IXFH42N60P3

MOSFET N-CH 600V 42A TO247AD

IXYS
2,619 -

RFQ

IXFH42N60P3

Технические

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 600 V 42A (Tc) 10V 185mOhm @ 500mA, 10V 5V @ 4mA 78 nC @ 10 V ±30V 5150 pF @ 25 V - 830W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH52N50P2

IXFH52N50P2

MOSFET N-CH 500V 52A TO247AD

IXYS
3,029 -

RFQ

IXFH52N50P2

Технические

Tube HiPerFET™, PolarP2™ Active N-Channel MOSFET (Metal Oxide) 500 V 52A (Tc) 10V 120mOhm @ 26A, 10V 4.5V @ 4mA 113 nC @ 10 V ±30V 6800 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH30N85X

IXFH30N85X

MOSFET N-CH 850V 30A TO247AD

IXYS
2,865 -

RFQ

IXFH30N85X

Технические

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 850 V 30A (Tc) 10V 220mOhm @ 500mA, 10V 5.5V @ 2.5mA 68 nC @ 10 V ±30V 2460 pF @ 25 V - 695W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH34N65X2

IXTH34N65X2

MOSFET N-CH 650V 34A TO247

IXYS
2,827 -

RFQ

IXTH34N65X2

Технические

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 34A (Tc) 10V 105mOhm @ 17A, 10V 4.5V @ 4mA 53 nC @ 10 V ±30V 3120 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH34N65X2

IXFH34N65X2

MOSFET N-CH 650V 34A TO247

IXYS
3,894 -

RFQ

IXFH34N65X2

Технические

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 34A (Tc) 10V 105mOhm @ 17A, 10V 5.5V @ 2.5mA 56 nC @ 10 V ±30V 3330 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFP20N85X

IXFP20N85X

MOSFET N-CH 850V 20A TO220AB

IXYS
2,288 -

RFQ

IXFP20N85X

Технические

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 850 V 20A (Tc) 10V 330mOhm @ 500mA, 10V 5.5V @ 2.5mA 63 nC @ 10 V ±30V 1660 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFA20N85XHV

IXFA20N85XHV

MOSFET N-CH 850V 20A TO263

IXYS
3,757 -

RFQ

IXFA20N85XHV

Технические

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 850 V 20A (Tc) 10V 330mOhm @ 500mA, 10V 5.5V @ 2.5mA 63 nC @ 10 V ±30V 1660 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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