Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTP05N100P

IXTP05N100P

MOSFET N-CH 1000V 500MA TO220AB

IXYS
3,500 -

RFQ

IXTP05N100P

Технические

Tube Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 500mA (Tc) 10V 30Ohm @ 250mA, 10V 4V @ 50µA 8.1 nC @ 10 V ±20V 196 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA02N450HV

IXTA02N450HV

MOSFET N-CH 4500V 200MA TO263

IXYS
3,913 -

RFQ

IXTA02N450HV

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 4500 V 200mA (Tc) 10V 750Ohm @ 10mA, 10V 6.5V @ 250µA 10.4 nC @ 10 V ±20V 256 pF @ 25 V - 113W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTF03N400

IXTF03N400

MOSFET N-CH 4000V 300MA I4PAC

IXYS
2,888 -

RFQ

IXTF03N400

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 4000 V 300mA (Tc) 10V 300Ohm @ 150mA, 10V 4V @ 250µA 16.3 nC @ 10 V ±20V 435 pF @ 25 V - 70W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA02N250

IXTA02N250

MOSFET N-CH 2500V 200MA TO263

IXYS
2,700 -

RFQ

IXTA02N250

Технические

Tube - Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 2500 V 200mA (Tc) 10V 450Ohm @ 50mA, 10V 4.5V @ 250µA 7.4 nC @ 10 V ±20V 116 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTY12N06TTRL

IXTY12N06TTRL

MOSFET N-CH 60V 12A TO252

IXYS
2,479 -

RFQ

IXTY12N06TTRL

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchMV™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 12A (Tc) 10V 85mOhm @ 6A, 10V 4V @ 25µA 3.4 nC @ 10 V ±20V 256 pF @ 25 V - 33W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDM15-06KC5

FDM15-06KC5

MOSFET N-CH 600V 15A I4PAC

IXYS
2,532 -

RFQ

FDM15-06KC5

Технические

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 165mOhm @ 12A, 10V 3.5V @ 790µA 52 nC @ 10 V ±20V 2000 pF @ 100 V - - -55°C ~ 150°C (TJ) Through Hole
IXFA5N50P3

IXFA5N50P3

MOSFET N-CH 500V 5A TO263

IXYS
3,220 -

RFQ

IXFA5N50P3

Технические

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.65Ohm @ 2.5A, 10V 5V @ 1mA 6.9 nC @ 10 V ±30V 370 pF @ 25 V - 114W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFA7N60P3

IXFA7N60P3

MOSFET N-CH 600V 7A TO263

IXYS
2,507 -

RFQ

IXFA7N60P3

Технические

Tube HiPerFET™, Polar3™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 1.15Ohm @ 3.5A, 10V 5V @ 1mA 13.3 nC @ 10 V ±30V 705 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFA8N50P3

IXFA8N50P3

MOSFET N-CH 500V 8A TO263

IXYS
2,876 -

RFQ

IXFA8N50P3

Технические

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 800mOhm @ 4A, 10V 5V @ 1.5mA 13 nC @ 10 V ±30V 705 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFP5N50P3

IXFP5N50P3

MOSFET N-CH 500V 5A TO220AB

IXYS
2,856 -

RFQ

IXFP5N50P3

Технические

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.65Ohm @ 2.5A, 10V 5V @ 1mA 6.9 nC @ 10 V ±30V 370 pF @ 25 V - 114W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFP8N50P3

IXFP8N50P3

MOSFET N-CH 500V 8A TO220AB

IXYS
3,651 -

RFQ

IXFP8N50P3

Технические

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 800mOhm @ 4A, 10V 5V @ 1.5mA 13 nC @ 10 V ±30V 705 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFY5N50P3

IXFY5N50P3

MOSFET N-CH 500V 5A TO252

IXYS
3,690 -

RFQ

IXFY5N50P3

Технические

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.65Ohm @ 2.5A, 10V 5V @ 1mA 6.9 nC @ 10 V ±30V 370 pF @ 25 V - 114W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTT12N140

IXTT12N140

MOSFET N-CH 1400V 12A TO268

IXYS
3,496 -

RFQ

IXTT12N140

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 1400 V 12A (Tc) 10V 2Ohm @ 6A, 10V 4.5V @ 250µA 106 nC @ 10 V ±20V 3720 pF @ 25 V - 890W (Tc) - Surface Mount
MKE11R600DCGFC

MKE11R600DCGFC

MOSFET N-CH 600V 15A I4PAC

IXYS
2,410 -

RFQ

MKE11R600DCGFC

Технические

Box CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 165mOhm @ 12A, 10V 3.5V @ 790µA 52 nC @ 10 V ±20V 2000 pF @ 100 V - - -55°C ~ 150°C (TJ) Through Hole
IXTY02N50D

IXTY02N50D

MOSFET N-CH 500V 200MA TO252

IXYS
3,057 -

RFQ

IXTY02N50D

Технические

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 500 V 200mA (Tc) - 30Ohm @ 50mA, 0V - - ±20V 120 pF @ 25 V Depletion Mode 1.1W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTP80N12T2

IXTP80N12T2

MOSFET N-CH 120V 80A TO220AB

IXYS
3,469 -

RFQ

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 120 V 80A (Tc) 10V 17mOhm @ 40A, 10V 4.5V @ 100µA 80 nC @ 10 V ±20V 4740 pF @ 25 V - 325W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTP110N055T2

IXTP110N055T2

MOSFET N-CH 55V 110A TO220AB

IXYS
3,381 -

RFQ

IXTP110N055T2

Технические

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 55 V 110A (Tc) 10V 6.6mOhm @ 25A, 10V 4V @ 250µA 57 nC @ 10 V ±20V 3060 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTP1R6N100D2

IXTP1R6N100D2

MOSFET N-CH 1000V 1.6A TO220AB

IXYS
2,087 -

RFQ

IXTP1R6N100D2

Технические

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 1000 V 1.6A (Tc) 10V 10Ohm @ 800mA, 0V - 27 nC @ 5 V ±20V 645 pF @ 25 V Depletion Mode 100W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA1R6N100D2

IXTA1R6N100D2

MOSFET N-CH 1000V 1.6A TO263

IXYS
2,045 -

RFQ

IXTA1R6N100D2

Технические

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 1000 V 1.6A (Tc) 10V 10Ohm @ 800mA, 0V - 27 nC @ 5 V ±20V 645 pF @ 25 V Depletion Mode 100W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTY90N055T2

IXTY90N055T2

MOSFET N-CH 55V 90A TO252

IXYS
2,162 -

RFQ

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 55 V 90A (Tc) 10V 8.4mOhm @ 25A, 10V 4V @ 250µA 42 nC @ 10 V ±20V 2770 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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