Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTA220N04T2-TRL

IXTA220N04T2-TRL

MOSFET N-CH 40V 220A TO263

IXYS
3,897 -

RFQ

Tape & Reel (TR) TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 40 V 220A (Tc) 10V 3.5mOhm @ 50A, 10V 4V @ 250µA 112 nC @ 10 V ±20V 6820 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTA08N100P

IXTA08N100P

MOSFET N-CH 1000V 800MA TO263

IXYS
2,735 -

RFQ

IXTA08N100P

Технические

Tube Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 800mA (Tc) 10V 20Ohm @ 500mA, 10V 4V @ 50µA 11.3 nC @ 10 V ±20V 240 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA18P10T

IXTA18P10T

MOSFET P-CH 100V 18A TO263

IXYS
3,850 -

RFQ

IXTA18P10T

Технические

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 100 V 18A (Tc) 10V 120mOhm @ 9A, 10V 4.5V @ 250µA 39 nC @ 10 V ±15V 2100 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA28P065T

IXTA28P065T

MOSFET P-CH 65V 28A TO263

IXYS
3,046 -

RFQ

IXTA28P065T

Технические

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 65 V 28A (Tc) 10V 45mOhm @ 14A, 10V 4.5V @ 250µA 46 nC @ 10 V ±15V 2030 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFA4N100P-TRL

IXFA4N100P-TRL

MOSFET N-CH 1000V 4A TO263

IXYS
3,290 -

RFQ

Tape & Reel (TR) HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 4A (Tc) 10V 3.3Ohm @ 2A, 10V 6V @ 250µA 26 nC @ 10 V ±20V 1456 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTP42N15T

IXTP42N15T

MOSFET N-CH 150V 42A TO220AB

IXYS
2,706 -

RFQ

IXTP42N15T

Технические

Tube Trench Active N-Channel MOSFET (Metal Oxide) 150 V 42A (Tc) 10V 45mOhm @ 500mA, 10V 4.5V @ 250µA 21 nC @ 10 V ±30V 1880 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTA42N15T-TRL

IXTA42N15T-TRL

MOSFET N-CH 150V 42A TO263

IXYS
3,309 -

RFQ

Tape & Reel (TR) Trench Active N-Channel MOSFET (Metal Oxide) 150 V 42A (Tc) 10V 45mOhm @ 21A, 10V 4.5V @ 250µA 21 nC @ 10 V ±30V 1880 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFA12N50P-TRL

IXFA12N50P-TRL

MOSFET N-CH 500V 12A TO263

IXYS
2,810 -

RFQ

Tape & Reel (TR) HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 500 V 12A (Tc) 10V 500mOhm @ 6A, 10V 5.5V @ 1mA 29 nC @ 10 V ±30V 1830 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA3N50D2-TRL

IXTA3N50D2-TRL

MOSFET N-CH 500V 3A TO263

IXYS
3,218 -

RFQ

Tape & Reel (TR) Depletion Active N-Channel MOSFET (Metal Oxide) 500 V 3A (Tj) 0V 1.5Ohm @ 1.5A, 0V 4.5V @ 250µA 40 nC @ 5 V ±20V 1070 pF @ 25 V Depletion Mode 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTP12N65X2

IXTP12N65X2

MOSFET N-CH 650V 12A TO220

IXYS
2,009 -

RFQ

IXTP12N65X2

Технические

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 300mOhm @ 6A, 10V 5V @ 250µA 17 nC @ 10 V ±30V 1100 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTU4N70X2

IXTU4N70X2

MOSFET N-CH 700V 4A TO251

IXYS
3,914 -

RFQ

IXTU4N70X2

Технические

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 700 V 4A (Tc) 10V 850mOhm @ 2A, 10V 4.5V @ 250µA 11.8 nC @ 10 V ±30V 386 pF @ 25 V - 80W (Tc) 150°C (TJ) Through Hole
IXTA140N055T2

IXTA140N055T2

MOSFET N-CH 55V 140A TO263

IXYS
2,576 -

RFQ

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 55 V 140A (Tc) 10V 5.4mOhm @ 50A, 10V 4V @ 250µA 82 nC @ 10 V ±20V 4760 pF @ 25 V - 250W (Ta) -55°C ~ 175°C (TJ) Surface Mount
IXFA12N65X2-TRL

IXFA12N65X2-TRL

MOSFET N-CH 650V 12A TO263

IXYS
3,562 -

RFQ

Tape & Reel (TR) HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 310mOhm @ 6A, 10V 5V @ 250µA 18.5 nC @ 10 V ±30V 1134 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTY4N65X2

IXTY4N65X2

MOSFET N-CH 650V 4A TO252

IXYS
2,848 -

RFQ

IXTY4N65X2

Технические

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 4A (Tc) 10V 850mOhm @ 2A, 10V 5V @ 250µA 8.3 nC @ 10 V ±30V 455 pF @ 25 V - 80W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTP230N04T4M

IXTP230N04T4M

MOSFET N-CH 40V 230A TO220

IXYS
2,537 -

RFQ

IXTP230N04T4M

Технические

Tube Trench Active N-Channel MOSFET (Metal Oxide) 40 V 230A (Tc) 10V 2.9mOhm @ 115A, 10V 4V @ 250µA 140 nC @ 10 V ±15V 7400 pF @ 25 V - 40W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTA48P05T-TRL

IXTA48P05T-TRL

MOSFET P-CH 50V 48A TO263

IXYS
3,773 -

RFQ

Tape & Reel (TR) TrenchP™ Active P-Channel MOSFET (Metal Oxide) 50 V 48A (Tc) 10V 30mOhm @ 24A, 10V 4.5V @ 250µA 53 nC @ 10 V ±15V 3660 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTP08N120P

IXTP08N120P

MOSFET N-CH 1200V 800MA TO220AB

IXYS
3,457 -

RFQ

IXTP08N120P

Технические

Tube Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 800mA (Tc) 10V 25Ohm @ 500mA, 10V 4.5V @ 50µA 14 nC @ 10 V ±20V 333 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFP4N100P

IXFP4N100P

MOSFET N-CH 1000V 4A TO220AB

IXYS
2,131 -

RFQ

IXFP4N100P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 4A (Tc) 10V 3.3Ohm @ 2A, 10V 5V @ 250µA 26 nC @ 10 V ±20V 1456 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFA10N80P-TRL

IXFA10N80P-TRL

MOSFET N-CH 800V 10A TO263

IXYS
2,416 -

RFQ

Tape & Reel (TR) HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 10A (Tc) 10V 1.1Ohm @ 5A, 10V 5.5V @ 2.5mA 40 nC @ 10 V ±30V 2050 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTP12N65X2M

IXTP12N65X2M

MOSFET N-CH 650V 12A TO220

IXYS
3,919 -

RFQ

IXTP12N65X2M

Технические

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 300mOhm @ 6A, 10V 4.5V @ 250µA 17.7 nC @ 10 V ±30V 1100 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
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