Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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NDB7052LN-CHANNEL POWER MOSFET Fairchild Semiconductor |
800 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | 75A (Tc) | 5V, 10V | 7.5mOhm @ 37.5A, 10V | 2V @ 250µA | 130 nC @ 5 V | ±16V | 4030 pF @ 25 V | - | 150W (Tc) | -65°C ~ 175°C (TJ) | Through Hole |
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FDD6676N-CHANNEL POWER MOSFET Fairchild Semiconductor |
8,182 | - |
RFQ |
![]() Технические |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 78A (Ta) | 4.5V, 10V | 7.5mOhm @ 16.8A, 10V | 3V @ 250µA | 63 nC @ 5 V | ±16V | 5103 pF @ 15 V | - | 1.6W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount |
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FDU8586MOSFET N-CH 20V 35A IPAK Fairchild Semiconductor |
6,297 | - |
RFQ |
![]() Технические |
Tube | PowerTrench® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 35A (Tc) | 4.5V, 10V | 5.5mOhm @ 35A, 10V | 2.5V @ 250µA | 48 nC @ 10 V | ±20V | 2480 pF @ 10 V | - | 77W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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HUFA76419S3SMOSFET N-CH 60V 29A D2PAK Fairchild Semiconductor |
4,400 | - |
RFQ |
![]() Технические |
Tube | UltraFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 29A (Tc) | 4.5V, 10V | 35mOhm @ 29A, 10V | 3V @ 250µA | 28 nC @ 10 V | ±16V | 900 pF @ 25 V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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HUF75925P3N-CHANNEL POWER MOSFET Fairchild Semiconductor |
2,400 | - |
RFQ |
![]() Технические |
Bulk | UltraFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 11A (Tc) | 10V | 275mOhm @ 11A, 10V | 4V @ 250µA | 78 nC @ 20 V | ±20V | 1030 pF @ 25 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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FDD2612MOSFET N-CH 200V 4.9A TO252 Fairchild Semiconductor |
2,261 | - |
RFQ |
![]() Технические |
Bulk | PowerTrench® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 4.9A (Ta) | 10V | 720mOhm @ 1.5A, 10V | 4.5V @ 250µA | 11 nC @ 10 V | ±20V | 234 pF @ 100 V | - | 42W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount |
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FQPF28N15MOSFET N-CH 150V 16.7A TO220F Fairchild Semiconductor |
1,904 | - |
RFQ |
![]() Технические |
Tube | QFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 16.7A (Tc) | 10V | 90mOhm @ 8.35A, 10V | 4V @ 250µA | 52 nC @ 10 V | ±25V | 1600 pF @ 25 V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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FQAF44N08MOSFET N-CH 80V 35.6A TO3PF Fairchild Semiconductor |
720 | - |
RFQ |
![]() Технические |
Tube | QFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 35.6A (Tc) | 10V | 34mOhm @ 17.8A, 10V | 4V @ 250µA | 50 nC @ 10 V | ±25V | 1430 pF @ 25 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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FDS3682_NLN-CHANNEL POWER MOSFET Fairchild Semiconductor |
704 | - |
RFQ |
![]() Технические |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 6A (Ta) | 6V, 10V | 35mOhm @ 6A, 10V | 4V @ 250µA | 25 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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FQAF19N20MOSFET N-CH 200V 15A TO3PF Fairchild Semiconductor |
684 | - |
RFQ |
![]() Технические |
Tube | QFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 15A (Tc) | 10V | 150mOhm @ 7.5A, 10V | 5V @ 250µA | 40 nC @ 10 V | ±30V | 1600 pF @ 25 V | - | 85W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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FQPF5N80MOSFET N-CH 800V 2.8A TO220F Fairchild Semiconductor |
610 | - |
RFQ |
![]() Технические |
Tube | QFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 2.8A (Tc) | 10V | 2.6Ohm @ 1.4A, 10V | 5V @ 250µA | 33 nC @ 10 V | ±30V | 1250 pF @ 25 V | - | 47W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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FDU3580MOSFET N-CH 80V 7.7A IPAK Fairchild Semiconductor |
1,825 | - |
RFQ |
![]() Технические |
Tube | PowerTrench® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 7.7A (Ta) | 6V, 10V | 29mOhm @ 7.7A, 10V | 4V @ 250µA | 79 nC @ 10 V | ±20V | 1760 pF @ 40 V | - | 3.8W (Ta), 42W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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FDD6670A_NLN-CHANNEL POWER MOSFET Fairchild Semiconductor |
1,112 | - |
RFQ |
![]() Технические |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 15A (Ta), 66A (Tc) | 4.5V, 10V | 8mOhm @ 15A, 10V | 3V @ 250µA | 22 nC @ 5 V | ±20V | 1755 pF @ 15 V | - | 1.3W (Ta), 63W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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FQI5N80TUMOSFET N-CH 800V 4.8A I2PAK Fairchild Semiconductor |
993 | - |
RFQ |
![]() Технические |
Tube | QFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 4.8A (Tc) | 10V | 2.6Ohm @ 2.4A, 10V | 5V @ 250µA | 33 nC @ 10 V | ±30V | 1250 pF @ 25 V | - | 3.13W (Ta), 140W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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SSS6N70AN-CHANNEL POWER MOSFET Fairchild Semiconductor |
950 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 4A (Tc) | 10V | 1.8Ohm @ 2A, 10V | 4V @ 250µA | 67 nC @ 10 V | ±30V | 1200 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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HUF75343G3MOSFET N-CH 55V 75A TO247-3 Fairchild Semiconductor |
546 | - |
RFQ |
![]() Технические |
Tube | UltraFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 9mOhm @ 75A, 10V | 4V @ 250µA | 205 nC @ 20 V | ±20V | 3000 pF @ 25 V | - | 270W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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FQAF28N15MOSFET N-CH 150V 22A TO3PF Fairchild Semiconductor |
473 | - |
RFQ |
![]() Технические |
Tube | QFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 22A (Tc) | 10V | 90mOhm @ 11A, 10V | 4V @ 250µA | 52 nC @ 10 V | ±25V | 1600 pF @ 25 V | - | 102W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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FQP9N50MOSFET N-CH 500V 9A TO220-3 Fairchild Semiconductor |
3,432 | - |
RFQ |
![]() Технические |
Tube | QFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 9A (Tc) | 10V | 730mOhm @ 4.5A, 10V | 5V @ 250µA | 36 nC @ 10 V | ±30V | 1450 pF @ 25 V | - | 147W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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FQPF6P25MOSFET P-CH 250V 4.2A TO220F Fairchild Semiconductor |
4,162 | - |
RFQ |
![]() Технические |
Tube | QFET® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 250 V | 4.2A (Tc) | 10V | 1.1Ohm @ 2.1A, 10V | 5V @ 250µA | 27 nC @ 10 V | ±30V | 780 pF @ 25 V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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FQP11N40MOSFET N-CH 400V 11.4A TO220-3 Fairchild Semiconductor |
1,919 | - |
RFQ |
![]() Технические |
Tube | QFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 11.4A (Tc) | 10V | 480mOhm @ 5.7A, 10V | 5V @ 250µA | 35 nC @ 10 V | ±30V | 1400 pF @ 25 V | - | 147W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |