Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NDB7052L

NDB7052L

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
800 -

RFQ

NDB7052L

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 50 V 75A (Tc) 5V, 10V 7.5mOhm @ 37.5A, 10V 2V @ 250µA 130 nC @ 5 V ±16V 4030 pF @ 25 V - 150W (Tc) -65°C ~ 175°C (TJ) Through Hole
FDD6676

FDD6676

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
8,182 -

RFQ

FDD6676

Технические

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 78A (Ta) 4.5V, 10V 7.5mOhm @ 16.8A, 10V 3V @ 250µA 63 nC @ 5 V ±16V 5103 pF @ 15 V - 1.6W (Ta) -55°C ~ 175°C (TJ) Surface Mount
FDU8586

FDU8586

MOSFET N-CH 20V 35A IPAK

Fairchild Semiconductor
6,297 -

RFQ

FDU8586

Технические

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 35A (Tc) 4.5V, 10V 5.5mOhm @ 35A, 10V 2.5V @ 250µA 48 nC @ 10 V ±20V 2480 pF @ 10 V - 77W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUFA76419S3S

HUFA76419S3S

MOSFET N-CH 60V 29A D2PAK

Fairchild Semiconductor
4,400 -

RFQ

HUFA76419S3S

Технические

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 29A (Tc) 4.5V, 10V 35mOhm @ 29A, 10V 3V @ 250µA 28 nC @ 10 V ±16V 900 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUF75925P3

HUF75925P3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,400 -

RFQ

HUF75925P3

Технические

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 200 V 11A (Tc) 10V 275mOhm @ 11A, 10V 4V @ 250µA 78 nC @ 20 V ±20V 1030 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDD2612

FDD2612

MOSFET N-CH 200V 4.9A TO252

Fairchild Semiconductor
2,261 -

RFQ

FDD2612

Технические

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 4.9A (Ta) 10V 720mOhm @ 1.5A, 10V 4.5V @ 250µA 11 nC @ 10 V ±20V 234 pF @ 100 V - 42W (Ta) -55°C ~ 175°C (TJ) Surface Mount
FQPF28N15

FQPF28N15

MOSFET N-CH 150V 16.7A TO220F

Fairchild Semiconductor
1,904 -

RFQ

FQPF28N15

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 16.7A (Tc) 10V 90mOhm @ 8.35A, 10V 4V @ 250µA 52 nC @ 10 V ±25V 1600 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQAF44N08

FQAF44N08

MOSFET N-CH 80V 35.6A TO3PF

Fairchild Semiconductor
720 -

RFQ

FQAF44N08

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 35.6A (Tc) 10V 34mOhm @ 17.8A, 10V 4V @ 250µA 50 nC @ 10 V ±25V 1430 pF @ 25 V - 83W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDS3682_NL

FDS3682_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
704 -

RFQ

FDS3682_NL

Технические

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 6A (Ta) 6V, 10V 35mOhm @ 6A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 1300 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQAF19N20

FQAF19N20

MOSFET N-CH 200V 15A TO3PF

Fairchild Semiconductor
684 -

RFQ

FQAF19N20

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 15A (Tc) 10V 150mOhm @ 7.5A, 10V 5V @ 250µA 40 nC @ 10 V ±30V 1600 pF @ 25 V - 85W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF5N80

FQPF5N80

MOSFET N-CH 800V 2.8A TO220F

Fairchild Semiconductor
610 -

RFQ

FQPF5N80

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 800 V 2.8A (Tc) 10V 2.6Ohm @ 1.4A, 10V 5V @ 250µA 33 nC @ 10 V ±30V 1250 pF @ 25 V - 47W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDU3580

FDU3580

MOSFET N-CH 80V 7.7A IPAK

Fairchild Semiconductor
1,825 -

RFQ

FDU3580

Технические

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 7.7A (Ta) 6V, 10V 29mOhm @ 7.7A, 10V 4V @ 250µA 79 nC @ 10 V ±20V 1760 pF @ 40 V - 3.8W (Ta), 42W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDD6670A_NL

FDD6670A_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
1,112 -

RFQ

FDD6670A_NL

Технические

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta), 66A (Tc) 4.5V, 10V 8mOhm @ 15A, 10V 3V @ 250µA 22 nC @ 5 V ±20V 1755 pF @ 15 V - 1.3W (Ta), 63W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQI5N80TU

FQI5N80TU

MOSFET N-CH 800V 4.8A I2PAK

Fairchild Semiconductor
993 -

RFQ

FQI5N80TU

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 800 V 4.8A (Tc) 10V 2.6Ohm @ 2.4A, 10V 5V @ 250µA 33 nC @ 10 V ±30V 1250 pF @ 25 V - 3.13W (Ta), 140W (Tc) -55°C ~ 150°C (TJ) Through Hole
SSS6N70A

SSS6N70A

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
950 -

RFQ

SSS6N70A

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 700 V 4A (Tc) 10V 1.8Ohm @ 2A, 10V 4V @ 250µA 67 nC @ 10 V ±30V 1200 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF75343G3

HUF75343G3

MOSFET N-CH 55V 75A TO247-3

Fairchild Semiconductor
546 -

RFQ

HUF75343G3

Технические

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 9mOhm @ 75A, 10V 4V @ 250µA 205 nC @ 20 V ±20V 3000 pF @ 25 V - 270W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQAF28N15

FQAF28N15

MOSFET N-CH 150V 22A TO3PF

Fairchild Semiconductor
473 -

RFQ

FQAF28N15

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 22A (Tc) 10V 90mOhm @ 11A, 10V 4V @ 250µA 52 nC @ 10 V ±25V 1600 pF @ 25 V - 102W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQP9N50

FQP9N50

MOSFET N-CH 500V 9A TO220-3

Fairchild Semiconductor
3,432 -

RFQ

FQP9N50

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 9A (Tc) 10V 730mOhm @ 4.5A, 10V 5V @ 250µA 36 nC @ 10 V ±30V 1450 pF @ 25 V - 147W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF6P25

FQPF6P25

MOSFET P-CH 250V 4.2A TO220F

Fairchild Semiconductor
4,162 -

RFQ

FQPF6P25

Технические

Tube QFET® Obsolete P-Channel MOSFET (Metal Oxide) 250 V 4.2A (Tc) 10V 1.1Ohm @ 2.1A, 10V 5V @ 250µA 27 nC @ 10 V ±30V 780 pF @ 25 V - 45W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQP11N40

FQP11N40

MOSFET N-CH 400V 11.4A TO220-3

Fairchild Semiconductor
1,919 -

RFQ

FQP11N40

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 11.4A (Tc) 10V 480mOhm @ 5.7A, 10V 5V @ 250µA 35 nC @ 10 V ±30V 1400 pF @ 25 V - 147W (Tc) -55°C ~ 150°C (TJ) Through Hole
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