Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FCU4300N80Z

FCU4300N80Z

MOSFET N-CH 800V 1.6A I-PAK

Fairchild Semiconductor
1,000 -

RFQ

FCU4300N80Z

Технические

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 800 V 1.6A (Tc) 10V 4.3Ohm @ 800mA, 10V 4.5V @ 160µA 8.8 nC @ 10 V ±20V 355 pF @ 100 V - 27.8W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDP5N60NZ

FDP5N60NZ

MOSFET N-CH 600V 4.5A TO220-3

Fairchild Semiconductor
858 -

RFQ

FDP5N60NZ

Технические

Bulk UniFET-II™ Active N-Channel MOSFET (Metal Oxide) 600 V 4.5A (Tc) 10V 2Ohm @ 2.25A, 10V 5V @ 250µA 13 nC @ 10 V ±25V 600 pF @ 25 V - 100W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF9N25C

FQPF9N25C

POWER FIELD-EFFECT TRANSISTOR, 8

Fairchild Semiconductor
9,565 -

RFQ

FQPF9N25C

Технические

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 250 V 8.8A (Tc) 10V 430mOhm @ 4.4A, 10V 4V @ 250µA 35 nC @ 10 V ±30V 710 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCU3400N80Z

FCU3400N80Z

MOSFET N-CH 800V 2A I-PAK

Fairchild Semiconductor
1,691 -

RFQ

FCU3400N80Z

Технические

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 800 V 2A (Tc) 10V 3.4Ohm @ 1A, 10V 4.5V @ 200µA 9.6 nC @ 10 V ±20V 400 pF @ 100 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF9N25CYDTU

FQPF9N25CYDTU

MOSFET N-CH 250V 8.8A TO220F-3

Fairchild Semiconductor
1,795 -

RFQ

FQPF9N25CYDTU

Технические

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 250 V 8.8A (Tc) 10V 430mOhm @ 4.4A, 10V 4V @ 250µA 35 nC @ 10 V ±30V 710 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF19N10

FQPF19N10

MOSFET N-CH 100V 13.6A TO220F

Fairchild Semiconductor
582 -

RFQ

FQPF19N10

Технические

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 100 V 13.6A (Tc) 10V 100mOhm @ 6.8A, 10V 4V @ 250µA 25 nC @ 10 V ±25V 780 pF @ 25 V - 38W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDP6030BL

FDP6030BL

POWER FIELD-EFFECT TRANSISTOR, 4

Fairchild Semiconductor
7,865 -

RFQ

FDP6030BL

Технические

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 4.5V, 10V 18mOhm @ 20A, 10V 3V @ 250µA 17 nC @ 5 V ±20V 1160 pF @ 15 V - 60W (Tc) -65°C ~ 175°C (TJ) Through Hole
FQPF20N06

FQPF20N06

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
1,124 -

RFQ

FQPF20N06

Технические

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 60 V 15A (Tc) 10V 60mOhm @ 7.5A, 10V 4V @ 250µA 15 nC @ 10 V ±25V 590 pF @ 25 V - 30W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQU2N90TU-AM002

FQU2N90TU-AM002

MOSFET N-CH 900V 1.7A I-PAK

Fairchild Semiconductor
977 -

RFQ

FQU2N90TU-AM002

Технические

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 900 V 1.7A (Tc) 10V 7.2Ohm @ 850mA, 10V 5V @ 250µA 15 nC @ 10 V ±30V 500 pF @ 25 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDD8874

FDD8874

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
5,256 -

RFQ

FDD8874

Технические

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta), 116A (Tc) 4.5V, 10V 5.1mOhm @ 35A, 10V 2.5V @ 250µA 72 nC @ 10 V ±20V 2990 pF @ 15 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDD8453LZ-F085

FDD8453LZ-F085

MOSFET N-CH 40V 50A DPAK

Fairchild Semiconductor
1,840 -

RFQ

FDD8453LZ-F085

Технические

Bulk Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 4.5V, 10V 6.7mOhm @ 15A, 10V 3V @ 250µA 64 nC @ 10 V ±20V 3515 pF @ 20 V - 118W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR420T

IRFR420T

2.5A, 500V, 3OHM, N-CHANNEL MOSF

Fairchild Semiconductor
7,500 -

RFQ

IRFR420T

Технические

Bulk * Active - - - - - - - - - - - - - -
IRLR130ATF

IRLR130ATF

13A, 100V, 0.12OHM, N-CHANNEL MO

Fairchild Semiconductor
2,000 -

RFQ

IRLR130ATF

Технические

Bulk * Active - - - - - - - - - - - - - -
SSP45N20A

SSP45N20A

35A, 200V, 0.065OHM, N-CHANNEL M

Fairchild Semiconductor
1,000 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 35A (Tc) 10V 65mOhm @ 17.5A, 10V 4V @ 250µA 152 nC @ 10 V ±30V 3940 pF @ 25 V - 175W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQP19N20C

FQP19N20C

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
2,000 -

RFQ

FQP19N20C

Технические

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 200 V 19A (Tc) 10V 170mOhm @ 9.5A, 10V 4V @ 250µA 53 nC @ 10 V ±30V 1080 pF @ 25 V - 139W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFW550ATM

IRFW550ATM

40A, 100V, 0.04OHM, N-CHANNEL MO

Fairchild Semiconductor
847 -

RFQ

IRFW550ATM

Технические

Bulk * Active - - - - - - - - - - - - - -
FDPF7N60NZT

FDPF7N60NZT

MOSFET N-CH 600V 6.5A TO220F

Fairchild Semiconductor
5,295 -

RFQ

FDPF7N60NZT

Технические

Bulk UniFET-II™ Active N-Channel MOSFET (Metal Oxide) 600 V 6.5A (Tc) 10V 1.25Ohm @ 3.25A, 10V 5V @ 250µA 17 nC @ 10 V ±30V 730 pF @ 25 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDP7N50

FDP7N50

MOSFET N-CH 500V 7A TO220-3

Fairchild Semiconductor
4,402 -

RFQ

FDP7N50

Технические

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 500 V 7A (Tc) 10V 900mOhm @ 3.5A, 10V 5V @ 250µA 16.6 nC @ 10 V ±30V 940 pF @ 25 V - 89W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQI50N06TU

FQI50N06TU

MOSFET N-CH 60V 50A I2PAK

Fairchild Semiconductor
1,792 -

RFQ

FQI50N06TU

Технические

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 22mOhm @ 25A, 10V 4V @ 250µA 41 nC @ 10 V ±25V 1540 pF @ 25 V - 3.75W (Ta), 120W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQP2N80

FQP2N80

MOSFET N-CH 800V 2.4A TO220-3

Fairchild Semiconductor
900 -

RFQ

FQP2N80

Технические

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 800 V 2.4A (Tc) 10V 6.3Ohm @ 1.2A, 10V 5V @ 250µA 15 nC @ 10 V ±30V 550 pF @ 25 V - 85W (Tc) -55°C ~ 150°C (TJ) Through Hole
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