Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDSS2407_SB82086

FDSS2407_SB82086

FDSS2407 - N-CHANNEL DUAL MOSFET

Fairchild Semiconductor
1,669 -

RFQ

FDSS2407_SB82086

Технические

Bulk * Active - - - - - - - - - - - - - -
FDPF6N60ZUT

FDPF6N60ZUT

MOSFET N-CH 600V 4.5A TO220F

Fairchild Semiconductor
450 -

RFQ

FDPF6N60ZUT

Технические

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 600 V 4.5A (Tc) 10V 2Ohm @ 2.25A, 10V 5V @ 250µA 20 nC @ 10 V ±30V 865 pF @ 25 V - 33.8W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDPF18N20FT-G

FDPF18N20FT-G

MOSFET N-CH 200V 18A TO220F

Fairchild Semiconductor
1,246 -

RFQ

FDPF18N20FT-G

Технические

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 140mOhm @ 9A, 10V 5V @ 250µA 26 nC @ 10 V ±30V 1180 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDPF5N50NZU

FDPF5N50NZU

MOSFET N-CH 500V 3.9A TO220F

Fairchild Semiconductor
1,656 -

RFQ

FDPF5N50NZU

Технические

Bulk UniFET-II™ Active N-Channel MOSFET (Metal Oxide) 500 V 3.9A (Tc) 10V 2Ohm @ 1.95A, 10V 5V @ 250µA 12 nC @ 10 V ±25V 485 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCPF4300N80Z

FCPF4300N80Z

MOSFET N-CH 800V 1.6A TO220F

Fairchild Semiconductor
931 -

RFQ

FCPF4300N80Z

Технические

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 800 V 1.6A (Tc) 10V 4.3Ohm @ 800mA, 10V 4.5V @ 160µA 8.8 nC @ 10 V ±20V 355 pF @ 100 V - 19.2W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQB5N50CTM

FQB5N50CTM

POWER FIELD-EFFECT TRANSISTOR, 5

Fairchild Semiconductor
5,870 -

RFQ

FQB5N50CTM

Технические

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.4Ohm @ 2.5A, 10V 4V @ 250µA 24 nC @ 10 V ±30V 625 pF @ 25 V - 73W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQPF9P25YDTU

FQPF9P25YDTU

MOSFET P-CH 250V 6A TO220F-3

Fairchild Semiconductor
705 -

RFQ

FQPF9P25YDTU

Технические

Bulk QFET® Active P-Channel MOSFET (Metal Oxide) 250 V 6A (Tc) 10V 620mOhm @ 3A, 10V 5V @ 250µA 38 nC @ 10 V ±30V 1180 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCP25N60N-F102

FCP25N60N-F102

MOSFET N-CH 600V 25A TO220-3

Fairchild Semiconductor
581 -

RFQ

FCP25N60N-F102

Технические

Bulk SupreMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 125mOhm @ 12.5A, 10V 4V @ 250µA 74 nC @ 10 V ±30V 3352 pF @ 100 V - 216W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCI25N60N-F102

FCI25N60N-F102

MOSFET N-CH 600V 25A I2PAK

Fairchild Semiconductor
787 -

RFQ

FCI25N60N-F102

Технические

Bulk SupreMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 125mOhm @ 12.5A, 10V 4V @ 250µA 74 nC @ 10 V ±30V 3352 pF @ 100 V - 216W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU220BTU

IRFU220BTU

IRFU220 - HEXFET N-CHANNEL POWER

Fairchild Semiconductor
2,232 -

RFQ

IRFU220BTU

Технические

Bulk * Active - - - - - - - - - - - - - -
FDPF10N50UT

FDPF10N50UT

MOSFET N-CH 500V 8A TO220F

Fairchild Semiconductor
1,406 -

RFQ

FDPF10N50UT

Технические

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 1.05Ohm @ 4A, 10V 5V @ 250µA 24 nC @ 10 V ±30V 1130 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDP16AN08A0

FDP16AN08A0

MOSFET N-CH 75V 9A/58A TO220-3

Fairchild Semiconductor
3,500 -

RFQ

FDP16AN08A0

Технические

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 75 V 9A (Ta), 58A (Tc) 6V, 10V 16mOhm @ 58A, 10V 4V @ 250µA 42 nC @ 10 V ±20V 1857 pF @ 25 V - 135W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF654B

IRF654B

IRF654B - 21A, 250V, 0.14OHM, N-

Fairchild Semiconductor
447 -

RFQ

IRF654B

Технические

Bulk * Active - - - - - - - - - - - - - -
HUF76132P3

HUF76132P3

75A, 30V, 0.016OHM, N-CHANNEL MO

Fairchild Semiconductor
800 -

RFQ

HUF76132P3

Технические

Bulk * Active - - - - - - - - - - - - - -
FQB7N60TM-WS

FQB7N60TM-WS

FQB7N60 - MOSFET N-CHANNEL SINGL

Fairchild Semiconductor
800 -

RFQ

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 600 V 7.4A (Tc) 10V 1Ohm @ 3.7A, 10V 5V @ 250µA 38 nC @ 10 V ±30V 1430 pF @ 25 V - 3.13W (Ta), 142W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQP4N80

FQP4N80

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
5,225 -

RFQ

FQP4N80

Технические

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 800 V 3.9A (Tc) 10V 3.6Ohm @ 1.95A, 10V 5V @ 250µA 25 nC @ 10 V ±30V 880 pF @ 25 V - 130W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDPF8N50NZF

FDPF8N50NZF

MOSFET N-CH 500V 7A TO220F

Fairchild Semiconductor
1,042 -

RFQ

FDPF8N50NZF

Технические

Bulk UniFET-II™ Active N-Channel MOSFET (Metal Oxide) 500 V 7A (Tc) 10V 1Ohm @ 3.5A, 10V 5V @ 250µA 18 nC @ 10 V ±25V 735 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQI4N80TU

FQI4N80TU

MOSFET N-CH 800V 3.9A I2PAK

Fairchild Semiconductor
2,146 -

RFQ

FQI4N80TU

Технические

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 800 V 3.9A (Tc) 10V 3.6Ohm @ 1.95A, 10V 5V @ 250µA 25 nC @ 10 V ±30V 880 pF @ 25 V - 3.13W (Ta), 130W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDB9409-F085

FDB9409-F085

MOSFET N-CH 40V 80A D2PAK

Fairchild Semiconductor
5,478 -

RFQ

FDB9409-F085

Технические

Bulk Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.5mOhm @ 80A, 10V 4V @ 250µA 56 nC @ 10 V ±20V 2980 pF @ 25 V - 94W (Tj) -55°C ~ 175°C (TJ) Surface Mount
FDP12N50

FDP12N50

MOSFET N-CH 500V 11.5A TO220-3

Fairchild Semiconductor
1,304 -

RFQ

FDP12N50

Технические

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 500 V 11.5A (Tc) 10V 650mOhm @ 6A, 10V 5V @ 250µA 30 nC @ 10 V ±30V 1315 pF @ 25 V - 165W (Tc) -55°C ~ 150°C (TJ) Through Hole
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