Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
HUFA76639S3S

HUFA76639S3S

MOSFET N-CH 100V 51A D2PAK

Fairchild Semiconductor
3,392 -

RFQ

HUFA76639S3S

Технические

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 51A (Tc) 4.5V, 10V 26mOhm @ 51A, 10V 3V @ 250µA 86 nC @ 10 V ±16V 2400 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SFF9250L

SFF9250L

MOSFET P-CH 200V 12.6A TO3PF

Fairchild Semiconductor
3,520 -

RFQ

SFF9250L

Технические

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 200 V 12.6A (Tc) 5V 230mOhm @ 6.3A, 5V 2V @ 250µA 120 nC @ 5 V ±20V 3250 pF @ 25 V - 90W (Tc) -55°C ~ 150°C (TJ) Through Hole
SFP9644

SFP9644

P-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,374 -

RFQ

SFP9644

Технические

Bulk - Active P-Channel MOSFET (Metal Oxide) 250 V 8.6A (Tc) 10V 800mOhm @ 4.3A, 10V 4V @ 250µA 58 nC @ 10 V ±30V 1565 pF @ 25 V - 123W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQB2P40TM

FQB2P40TM

MOSFET P-CH 400V 2A D2PAK

Fairchild Semiconductor
2,051 -

RFQ

FQB2P40TM

Технические

Bulk QFET® Obsolete P-Channel MOSFET (Metal Oxide) 400 V 2A (Tc) 10V 6.5Ohm @ 1A, 10V 5V @ 250µA 13 nC @ 10 V ±30V 350 pF @ 25 V - 3.13W (Ta), 63W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDB8878

FDB8878

MOSFET N-CH 30V 48A TO263

Fairchild Semiconductor
3,151 -

RFQ

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 48A (Tc) 4.5V, 10V 14mOhm @ 40A, 10V 2.5V @ 250µA 23 nC @ 10 V ±20V 1235 pF @ 15 V - 47.3W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQB12N60CTM

FQB12N60CTM

MOSFET N-CH 600V 12A D2PAK

Fairchild Semiconductor
3,603 -

RFQ

FQB12N60CTM

Технические

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 650mOhm @ 6A, 10V 4V @ 250µA 63 nC @ 10 V ±30V 2290 pF @ 25 V - 3.13W (Ta), 225W (Tc) -55°C ~ 150°C (TJ) Surface Mount
HUFA75332S3S

HUFA75332S3S

MOSFET N-CH 55V 60A D2PAK

Fairchild Semiconductor
2,001 -

RFQ

HUFA75332S3S

Технические

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 60A (Tc) 10V 19mOhm @ 60A, 10V 4V @ 250µA 85 nC @ 20 V ±20V 1300 pF @ 25 V - 145W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NVD6416ANLT4G

NVD6416ANLT4G

MOSFET N-CH 100V 19A DPAK

Fairchild Semiconductor
3,593 -

RFQ

NVD6416ANLT4G

Технические

Bulk Automotive, AEC-Q101 Obsolete N-Channel MOSFET (Metal Oxide) 100 V 19A (Tc) 4.5V, 10V 74mOhm @ 19A, 10V 2.2V @ 250µA 40 nC @ 10 V ±20V 1000 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUF76439S3S

HUF76439S3S

MOSFET N-CH 60V 75A D2PAK

Fairchild Semiconductor
3,006 -

RFQ

HUF76439S3S

Технические

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 4.5V, 10V 12mOhm @ 75A, 10V 3V @ 250µA 84 nC @ 10 V ±16V 2745 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQD6N60CTF

FQD6N60CTF

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,232 -

RFQ

FQD6N60CTF

Технические

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 2Ohm @ 2A, 10V 4V @ 250µA 20 nC @ 10 V ±30V 810 pF @ 25 V - 80W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDS6064N7

FDS6064N7

MOSFET N-CH 20V 23A 8SO

Fairchild Semiconductor
3,256 -

RFQ

FDS6064N7

Технические

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 23A (Ta) 1.8V, 4.5V 3.5mOhm @ 23A, 4.5V 1.5V @ 250µA 98 nC @ 4.5 V ±8V 7191 pF @ 10 V - 3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQPF4N80

FQPF4N80

MOSFET N-CH 800V 2.2A TO220F

Fairchild Semiconductor
2,445 -

RFQ

FQPF4N80

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 800 V 2.2A (Tc) 10V 3.6Ohm @ 1.1A, 10V 5V @ 250µA 25 nC @ 10 V ±30V 880 pF @ 25 V - 43W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUFA76443P3_NL

HUFA76443P3_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,896 -

RFQ

HUFA76443P3_NL

Технические

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 4.5V, 10V 8mOhm @ 75A, 10V 3V @ 250µA 129 nC @ 10 V ±16V 4115 pF @ 25 V - 260W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDP13AN06A0_NL

FDP13AN06A0_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,403 -

RFQ

FDP13AN06A0_NL

Технические

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 10.9A (Ta), 62A (Tc) 6V, 10V 13.5mOhm @ 62A, 10V 4V @ 250µA 29 nC @ 10 V ±20V 1350 pF @ 25 V - 115W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDS6609A

FDS6609A

MOSFET P-CH 30V 6.3A 8SOIC

Fairchild Semiconductor
2,475 -

RFQ

FDS6609A

Технические

Bulk PowerTrench® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 6.3A (Ta) 4.5V, 10V 32mOhm @ 7A, 10V 3V @ 250µA 29 nC @ 10 V ±20V 930 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQAF14N30

FQAF14N30

MOSFET N-CH 300V 11.4A TO3PF

Fairchild Semiconductor
3,016 -

RFQ

FQAF14N30

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 300 V 11.4A (Tc) 10V 290mOhm @ 5.7A, 10V 5V @ 250µA 40 nC @ 10 V ±30V 1360 pF @ 25 V - 90W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDPF3860TYDTU

FDPF3860TYDTU

MOSFET N-CH 100V 20A TO220F-3

Fairchild Semiconductor
2,708 -

RFQ

FDPF3860TYDTU

Технические

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 20A (Tc) 10V 38.2mOhm @ 5.9A, 10V 4.5V @ 250µA 35 nC @ 10 V ±20V 1800 pF @ 25 V - 33.8W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQD3N50CTM

FQD3N50CTM

MOSFET N-CH 500V 2.5A DPAK

Fairchild Semiconductor
3,429 -

RFQ

FQD3N50CTM

Технические

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 2.5A (Tc) 10V 2.5Ohm @ 1.25A, 10V 4V @ 250µA 13 nC @ 10 V ±30V 365 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQPF5N50C

FQPF5N50C

MOSFET N-CH 500V 5A TO220F

Fairchild Semiconductor
3,009 -

RFQ

FQPF5N50C

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.4Ohm @ 2.5A, 10V 4V @ 250µA 24 nC @ 10 V ±30V 625 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQA11N90

FQA11N90

MOSFET N-CH 900V 11.4A TO3P

Fairchild Semiconductor
3,997 -

RFQ

FQA11N90

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 900 V 11.4A (Tc) 10V 960mOhm @ 5.7A, 10V 5V @ 250µA 94 nC @ 10 V ±30V 3500 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
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