Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FQA9N90-F109

FQA9N90-F109

POWER FIELD-EFFECT TRANSISTOR, 8

Fairchild Semiconductor
398 -

RFQ

FQA9N90-F109

Технические

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 900 V 8.6A (Tc) 10V 1.3Ohm @ 4.3A, 10V 5V @ 250µA 72 nC @ 10 V ±30V 2700 pF @ 25 V - 240W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCH190N65F-F085

FCH190N65F-F085

MOSFET N-CH 650V 20.6A TO247-3

Fairchild Semiconductor
294 -

RFQ

FCH190N65F-F085

Технические

Bulk Automotive, AEC-Q101, SuperFET® II Active N-Channel MOSFET (Metal Oxide) 650 V 20.6A (Tc) 10V 190mOhm @ 27A, 10V 5V @ 250µA 82 nC @ 10 V ±20V 3181 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDP039N08B-F102

FDP039N08B-F102

MOSFET N-CH 80V 120A TO220-3

Fairchild Semiconductor
399 -

RFQ

FDP039N08B-F102

Технические

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 3.9mOhm @ 100A, 10V 4.5V @ 250µA 133 nC @ 10 V ±20V 9450 pF @ 40 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
FCH041N65EFL4

FCH041N65EFL4

POWER FIELD-EFFECT TRANSISTOR, N

Fairchild Semiconductor
232 -

RFQ

FCH041N65EFL4

Технические

Bulk FRFET®, SuperFET® II Active N-Channel MOSFET (Metal Oxide) 650 V 76A (Tc) 10V 41mOhm @ 38A, 10V 5V @ 7.6mA 298 nC @ 10 V ±20V 12560 pF @ 100 V - 595W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCH041N65F-F085

FCH041N65F-F085

MOSFET N-CH 650V 76A TO247-3

Fairchild Semiconductor
207 -

RFQ

FCH041N65F-F085

Технические

Bulk Automotive, AEC-Q101, SuperFET® II Active N-Channel MOSFET (Metal Oxide) 650 V 76A (Tc) 10V 41mOhm @ 38A, 10V 5V @ 250µA 304 nC @ 10 V ±20V 13566 pF @ 25 V - 595W (Tc) -55°C ~ 150°C (TJ) Through Hole
2N7002MTF

2N7002MTF

MOSFET N-CH 60V 115MA SOT23-3

Fairchild Semiconductor
3,524 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 115mA (Tc) 5V, 10V 7.5Ohm @ 500mA, 10V 3V @ 1mA - ±20V 50 pF @ 25 V - 200mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
MCH3476-TL-W

MCH3476-TL-W

MOSFET N-CH 20V 2A SC70FL/MCPH3

Fairchild Semiconductor
2,249 -

RFQ

MCH3476-TL-W

Технические

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 2A (Ta) - 125mOhm @ 1A, 4.5V 1.3V @ 1mA 1.8 nC @ 4.5 V ±12V 128 pF @ 10 V - 800mW (Ta) 150°C (TJ) Surface Mount
2N7000BU

2N7000BU

MOSFET N-CH 60V 200MA TO92-3

Fairchild Semiconductor
2,246 -

RFQ

2N7000BU

Технические

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 200mA (Tc) 4.5V, 10V 5Ohm @ 500mA, 10V 3V @ 1mA - ±20V 50 pF @ 25 V - 400mW (Ta) -55°C ~ 150°C (TJ) Through Hole
IRFR214BTFFP001

IRFR214BTFFP001

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,107 -

RFQ

IRFR214BTFFP001

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 250 V 2.2A (Tc) 10V 2Ohm @ 1.1A, 10V 4V @ 250µA 10.5 nC @ 10 V ±30V 275 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR310BTF

IRFR310BTF

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,008 -

RFQ

IRFR310BTF

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 1.7A (Tc) 10V 3.4Ohm @ 850mA,10V 4V @ 250µA 10 nC @ 10 V ±30V 330 pF @ 25 V - 2.5W (Ta), 26W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFI624BTUFP001

IRFI624BTUFP001

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,684 -

RFQ

IRFI624BTUFP001

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 250 V 4.1A (Tc) 10V 1.1Ohm @ 2.05A, 10V 4V @ 250µA 18 nC @ 10 V ±30V 450 pF @ 25 V - 3.13W (Ta), 49W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQI4N25TU

FQI4N25TU

MOSFET N-CH 250V 3.6A I2PAK

Fairchild Semiconductor
3,041 -

RFQ

FQI4N25TU

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 3.6A (Tc) 10V 1.75Ohm @ 1.8A, 10V 5V @ 250µA 5.6 nC @ 10 V ±30V 200 pF @ 25 V - 3.13W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQNL1N50BTA

FQNL1N50BTA

MOSFET N-CH 500V 270MA TO92-3

Fairchild Semiconductor
2,193 -

RFQ

FQNL1N50BTA

Технические

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 270mA (Tc) 10V 9Ohm @ 135mA, 10V 3.7V @ 250µA 5.5 nC @ 10 V ±30V 150 pF @ 25 V - 1.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF610A

IRF610A

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,841 -

RFQ

IRF610A

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 3.3A (Tc) 10V 1.5Ohm @ 1.65A, 10V 4V @ 250µA 10 nC @ 10 V ±30V 210 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQI4N20

FQI4N20

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,626 -

RFQ

FQI4N20

Технические

Bulk QFET™ Active N-Channel MOSFET (Metal Oxide) 200 V 3.6A (Tc) 10V 1.4Ohm @ 1.8A, 10V 5V @ 250µA 6.5 nC @ 10 V ±30V 220 pF @ 25 V - 3.13W (Ta), 45W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFW710BTM

IRFW710BTM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,238 -

RFQ

IRFW710BTM

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 2A (Tc) 10V 3.4Ohm @ 1A, 10V 4V @ 250µA 10 nC @ 10 V ±30V 330 pF @ 25 V - 3.13W (Ta), 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SFP9Z24

SFP9Z24

MOSFET P-CH 60V 9.7A TO220-3

Fairchild Semiconductor
3,750 -

RFQ

SFP9Z24

Технические

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 9.7A (Tc) 10V 280mOhm @ 4.9A, 10V 4V @ 250µA 19 nC @ 10 V ±30V 600 pF @ 25 V - 49W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLS620A

IRLS620A

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,179 -

RFQ

IRLS620A

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 4.1A (Tc) 5V 800mOhm @ 2.05A, 5V 2V @ 250µA 15 nC @ 5 V ±20V 430 pF @ 25 V - 26W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQD5N15TF

FQD5N15TF

MOSFET N-CH 150V 4.3A DPAK

Fairchild Semiconductor
3,212 -

RFQ

FQD5N15TF

Технические

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 4.3A (Tc) 10V 800mOhm @ 2.15A, 10V 4V @ 250µA 7 nC @ 10 V ±25V 230 pF @ 25 V - 2.5W (Ta), 30W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4416DY

SI4416DY

SMALL SIGNAL N-CHANNEL MOSFET

Fairchild Semiconductor
2,673 -

RFQ

SI4416DY

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta) - 18mOhm @ 9A, 10V 1V @ 250µA 20 nC @ 5 V ±20V 1340 pF @ 15 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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