Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIR638ADP-T1-RE3

SIR638ADP-T1-RE3

MOSFET N-CH 40V 100A PPAK SO-8

Vishay Siliconix
2,449 -

RFQ

SIR638ADP-T1-RE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 4.5V, 10V 0.88mOhm @ 20A, 10V 2.3V @ 250µA 165 nC @ 10 V +20V, -16V 9100 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DMNH6012SPSQ-13

DMNH6012SPSQ-13

MOSFET N-CH 60V 50A PWRDI5060-8

Diodes Incorporated
2,888 -

RFQ

DMNH6012SPSQ-13

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 11mOhm @ 50A, 10V 4V @ 250µA 35.2 nC @ 10 V ±20V 1926 pF @ 30 V - 1.6W (Ta) -55°C ~ 175°C (TJ) Surface Mount
TPH8R008NH,L1Q

TPH8R008NH,L1Q

MOSFET N-CH 80V 34A 8SOP

Toshiba Semiconductor and Storage
2,868 -

RFQ

TPH8R008NH,L1Q

Технические

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 80 V 34A (Tc) 10V 8mOhm @ 17A, 10V 4V @ 500µA 35 nC @ 10 V ±20V 3000 pF @ 40 V - 1.6W (Ta), 61W (Tc) 150°C (TJ) Surface Mount
FDD13AN06A0-F085

FDD13AN06A0-F085

MOSFET N-CH 60V 9.9A/50A TO252AA

onsemi
3,675 -

RFQ

FDD13AN06A0-F085

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 9.9A (Ta), 50A (Tc) 6V, 10V 13.5mOhm @ 50A, 10V 4V @ 250µA 29 nC @ 10 V ±20V 1350 pF @ 25 V - 115W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NVMFS4C05NT1G

NVMFS4C05NT1G

MOSFET N-CH 30V 24.7A/116A 5DFN

onsemi
3,770 -

RFQ

NVMFS4C05NT1G

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 30 V 24.7A (Ta), 116A (Tc) 4.5V, 10V 3.4mOhm @ 30A, 10V 2.2V @ 250µA 30 nC @ 10 V ±20V 1972 pF @ 15 V - 3.61W (Ta), 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK7P60W5,RVQ

TK7P60W5,RVQ

MOSFET N-CH 600V 7A DPAK

Toshiba Semiconductor and Storage
3,825 -

RFQ

TK7P60W5,RVQ

Технические

Tape & Reel (TR),Cut Tape (CT) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Ta) 10V 670mOhm @ 3.5A, 10V 4.5V @ 350µA 16 nC @ 10 V ±30V 490 pF @ 300 V Super Junction 60W (Tc) 150°C (TJ) Surface Mount
FDD10AN06A0

FDD10AN06A0

MOSFET N-CH 60V 11A/50A TO252AA

onsemi
3,815 -

RFQ

FDD10AN06A0

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 11A (Ta), 50A (Tc) 6V, 10V 10.5mOhm @ 50A, 10V 4V @ 250µA 37 nC @ 10 V ±20V 1840 pF @ 25 V - 135W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDD3690

FDD3690

MOSFET N-CH 100V 22A DPAK

onsemi
3,599 -

RFQ

FDD3690

Технические

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 22A (Tc) 6V, 10V 64mOhm @ 5.4A, 10V 4V @ 250µA 39 nC @ 10 V ±20V 1514 pF @ 50 V - 3.8W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB054N06N3GATMA1

IPB054N06N3GATMA1

MOSFET N-CH 60V 80A D2PAK

Infineon Technologies
2,552 -

RFQ

IPB054N06N3GATMA1

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 5.4mOhm @ 80A, 10V 4V @ 58µA 82 nC @ 10 V ±20V 6600 pF @ 30 V - 115W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTD4808N-1G

NTD4808N-1G

MOSFET N-CH 30V 10A/63A IPAK

onsemi
2,443 -

RFQ

NTD4808N-1G

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 10A (Ta), 63A (Tc) 4.5V, 11.5V 8mOhm @ 30A, 10V 2.5V @ 250µA 13 nC @ 4.5 V ±20V 1538 pF @ 12 V - 1.4W (Ta), 54.6W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4808N-35G

NTD4808N-35G

MOSFET N-CH 30V 10A/63A IPAK

onsemi
7,105 -

RFQ

NTD4808N-35G

Технические

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 10A (Ta), 63A (Tc) 4.5V, 11.5V 8mOhm @ 30A, 10V 2.5V @ 250µA 13 nC @ 4.5 V ±20V 1538 pF @ 12 V - 1.4W (Ta), 54.6W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4808NT4G

NTD4808NT4G

MOSFET N-CH 30V 10A/63A DPAK

onsemi
22,486 -

RFQ

NTD4808NT4G

Технические

Tape & Reel (TR),Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 10A (Ta), 63A (Tc) 4.5V, 11.5V 8mOhm @ 30A, 10V 2.5V @ 250µA 13 nC @ 4.5 V ±20V 1538 pF @ 12 V - 1.4W (Ta), 54.6W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTD4809N-1G

NTD4809N-1G

MOSFET N-CH 30V 9.6A/58A IPAK

onsemi
6,748 -

RFQ

NTD4809N-1G

Технические

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9.6A (Ta), 58A (Tc) 4.5V, 11.5V 9mOhm @ 30A, 10V 2.5V @ 250µA 13 nC @ 4.5 V ±20V 1456 pF @ 12 V - 1.4W (Ta), 52W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4809N-35G

NTD4809N-35G

MOSFET N-CH 30V 9.6A/58A IPAK

onsemi
62,400 -

RFQ

NTD4809N-35G

Технические

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9.6A (Ta), 58A (Tc) 4.5V, 11.5V 9mOhm @ 30A, 10V 2.5V @ 250µA 13 nC @ 4.5 V ±20V 1456 pF @ 12 V - 1.4W (Ta), 52W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4809NA-1G

NTD4809NA-1G

MOSFET N-CH 30V 9.6A/58A IPAK

onsemi
86,000 -

RFQ

NTD4809NA-1G

Технические

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9.6A (Ta), 58A (Tc) 4.5V, 11.5V 9mOhm @ 30A, 10V 2.5V @ 250µA 13 nC @ 4.5 V ±20V 1456 pF @ 12 V - 1.3W (Ta), 52W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4809NA-35G

NTD4809NA-35G

MOSFET N-CH 30V 9.6A/58A IPAK

onsemi
2,840 -

RFQ

NTD4809NA-35G

Технические

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9.6A (Ta), 58A (Tc) 4.5V, 11.5V 9mOhm @ 30A, 10V 2.5V @ 250µA 13 nC @ 4.5 V ±20V 1456 pF @ 12 V - 1.3W (Ta), 52W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4809NAT4G

NTD4809NAT4G

MOSFET N-CH 30V 9.6A/58A DPAK

onsemi
193,200 -

RFQ

NTD4809NAT4G

Технические

Tape & Reel (TR),Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9.6A (Ta), 58A (Tc) 4.5V, 11.5V 9mOhm @ 30A, 10V 2.5V @ 250µA 13 nC @ 4.5 V ±20V 1456 pF @ 12 V - 1.3W (Ta), 52W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTD4809NH-1G

NTD4809NH-1G

MOSFET N-CH 30V 9.6A/58A IPAK

onsemi
3,624 -

RFQ

NTD4809NH-1G

Технические

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9.6A (Ta), 58A (Tc) 4.5V, 11.5V 9mOhm @ 30A, 10V 2.5V @ 250µA 15 nC @ 4.5 V ±20V 2155 pF @ 12 V - 1.3W (Ta), 52W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4809NH-35G

NTD4809NH-35G

MOSFET N-CH 30V 9.6A/58A IPAK

onsemi
58,847 -

RFQ

NTD4809NH-35G

Технические

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9.6A (Ta), 58A (Tc) 4.5V, 11.5V 9mOhm @ 30A, 10V 2.5V @ 250µA 15 nC @ 4.5 V ±20V 2155 pF @ 12 V - 1.3W (Ta), 52W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4810NH-1G

NTD4810NH-1G

MOSFET N-CH 30V 9A/54A IPAK

onsemi
3,665 -

RFQ

NTD4810NH-1G

Технические

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta), 54A (Tc) 4.5V, 11.5V 10mOhm @ 30A, 10V 2.5V @ 250µA 12 nC @ 4.5 V ±20V 1225 pF @ 12 V - 1.28W (Ta), 50W (Tc) -55°C ~ 175°C (TJ) Through Hole
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20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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