Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NTD4810NH-35G

NTD4810NH-35G

MOSFET N-CH 30V 9A/54A IPAK

onsemi
3,250 -

RFQ

NTD4810NH-35G

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta), 54A (Tc) 4.5V, 11.5V 10mOhm @ 30A, 10V 2.5V @ 250µA 12 nC @ 4.5 V ±20V 1225 pF @ 12 V - 1.28W (Ta), 50W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4810NHT4G

NTD4810NHT4G

MOSFET N-CH 30V 9A/54A DPAK

onsemi
5,000 -

RFQ

NTD4810NHT4G

Технические

Tape & Reel (TR),Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta), 54A (Tc) 4.5V, 11.5V 10mOhm @ 30A, 10V 2.5V @ 250µA 12 nC @ 4.5 V ±20V 1225 pF @ 12 V - 1.28W (Ta), 50W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTD4813N-1G

NTD4813N-1G

MOSFET N-CH 30V 7.6A/40A IPAK

onsemi
6,645 -

RFQ

NTD4813N-1G

Технические

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7.6A (Ta), 40A (Tc) 4.5V, 11.5V 13mOhm @ 30A, 10V 2.5V @ 250µA 7.9 nC @ 4.5 V ±20V 860 pF @ 12 V - 1.27W (Ta), 35.3W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4813N-35G

NTD4813N-35G

MOSFET N-CH 30V 7.6A/40A IPAK

onsemi
6,150 -

RFQ

NTD4813N-35G

Технические

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7.6A (Ta), 40A (Tc) 4.5V, 11.5V 13mOhm @ 30A, 10V 2.5V @ 250µA 7.9 nC @ 4.5 V ±20V 860 pF @ 12 V - 1.27W (Ta), 35.3W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4813NH-1G

NTD4813NH-1G

MOSFET N-CH 30V 7.6A/40A IPAK

onsemi
2,919 -

RFQ

NTD4813NH-1G

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7.6A (Ta), 40A (Tc) 4.5V, 11.5V 13mOhm @ 30A, 10V 2.5V @ 250µA 10 nC @ 4.5 V ±20V 940 pF @ 12 V - 1.27W (Ta), 35.3W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4813NH-35G

NTD4813NH-35G

MOSFET N-CH 30V 7.6A/40A IPAK

onsemi
14,455 -

RFQ

NTD4813NH-35G

Технические

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7.6A (Ta), 40A (Tc) 4.5V, 11.5V 13mOhm @ 30A, 10V 2.5V @ 250µA 10 nC @ 4.5 V ±20V 940 pF @ 12 V - 1.27W (Ta), 35.3W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4815NH-1G

NTD4815NH-1G

MOSFET N-CH 30V 6.9A/35A IPAK

onsemi
64,240 -

RFQ

NTD4815NH-1G

Технические

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 6.9A (Ta), 35A (Tc) 4.5V, 11.5V 15mOhm @ 30A, 10V 2.5V @ 250µA 6.8 nC @ 4.5 V ±20V 845 pF @ 12 V - 1.26W (Ta), 32.6W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4815NH-35G

NTD4815NH-35G

MOSFET N-CH 30V 6.9A/35A IPAK

onsemi
2,846 -

RFQ

NTD4815NH-35G

Технические

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 6.9A (Ta), 35A (Tc) 4.5V, 11.5V 15mOhm @ 30A, 10V 2.5V @ 250µA 6.8 nC @ 4.5 V ±20V 845 pF @ 12 V - 1.26W (Ta), 32.6W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4854N-1G

NTD4854N-1G

MOSFET N-CH 25V 15.7A/128A IPAK

onsemi
1,800 -

RFQ

NTD4854N-1G

Технические

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 25 V 15.7A (Ta), 128A (Tc) 4.5V, 10V 3.6mOhm @ 30A, 10V 2.5V @ 250µA 49.2 nC @ 4.5 V ±20V 4600 pF @ 12 V - 1.43W (Ta), 93.75W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4854N-35G

NTD4854N-35G

MOSFET N-CH 25V 15.7A/128A IPAK

onsemi
4,950 -

RFQ

NTD4854N-35G

Технические

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 25 V 15.7A (Ta), 128A (Tc) 4.5V, 10V 3.6mOhm @ 30A, 10V 2.5V @ 250µA 49.2 nC @ 4.5 V ±20V 4600 pF @ 12 V - 1.43W (Ta), 93.75W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4854NT4G

NTD4854NT4G

MOSFET N-CH 25V 15.7A/128A DPAK

onsemi
51,325 -

RFQ

NTD4854NT4G

Технические

Tape & Reel (TR),Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 25 V 15.7A (Ta), 128A (Tc) 4.5V, 10V 3.6mOhm @ 30A, 10V 2.5V @ 250µA 49.2 nC @ 4.5 V ±20V 4600 pF @ 12 V - 1.43W (Ta), 93.75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTD4855N-1G

NTD4855N-1G

MOSFET N-CH 25V 14A/98A IPAK

onsemi
10,425 -

RFQ

NTD4855N-1G

Технические

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 25 V 14A (Ta), 98A (Tc) 4.5V, 10V 4.3mOhm @ 30A, 10V 2.5V @ 250µA 32.7 nC @ 4.5 V ±20V 2950 pF @ 12 V - 1.35W (Ta), 66.7W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4855N-35G

NTD4855N-35G

MOSFET N-CH 25V 14A/98A IPAK

onsemi
2,925 -

RFQ

NTD4855N-35G

Технические

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 25 V 14A (Ta), 98A (Tc) 4.5V, 10V 4.3mOhm @ 30A, 10V 2.5V @ 250µA 32.7 nC @ 4.5 V ±20V 2950 pF @ 12 V - 1.35W (Ta), 66.7W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4855NT4G

NTD4855NT4G

MOSFET N-CH 25V 14A/98A DPAK

onsemi
209,901 -

RFQ

NTD4855NT4G

Технические

Tape & Reel (TR),Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 25 V 14A (Ta), 98A (Tc) 4.5V, 10V 4.3mOhm @ 30A, 10V 2.5V @ 250µA 32.7 nC @ 4.5 V ±20V 2950 pF @ 12 V - 1.35W (Ta), 66.7W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTD4856N-1G

NTD4856N-1G

MOSFET N-CH 25V 13.3A/89A IPAK

onsemi
3,150 -

RFQ

NTD4856N-1G

Технические

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 25 V 13.3A (Ta), 89A (Tc) 4.5V, 10V 4.7mOhm @ 30A, 10V 2.5V @ 250µA 27 nC @ 4.5 V ±20V 2241 pF @ 12 V - 1.33W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4856N-35G

NTD4856N-35G

MOSFET N-CH 25V 13.3A/89A IPAK

onsemi
2,550 -

RFQ

NTD4856N-35G

Технические

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 25 V 13.3A (Ta), 89A (Tc) 4.5V, 10V 4.7mOhm @ 30A, 10V 2.5V @ 250µA 27 nC @ 4.5 V ±20V 2241 pF @ 12 V - 1.33W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4856NT4G

NTD4856NT4G

MOSFET N-CH 25V 13.3A/89A DPAK

onsemi
2,812 -

RFQ

NTD4856NT4G

Технические

Tape & Reel (TR),Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 25 V 13.3A (Ta), 89A (Tc) 4.5V, 10V 4.7mOhm @ 30A, 10V 2.5V @ 250µA 27 nC @ 4.5 V ±20V 2241 pF @ 12 V - 1.33W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTD4857N-1G

NTD4857N-1G

MOSFET N-CH 25V 12A/78A IPAK

onsemi
8,400 -

RFQ

NTD4857N-1G

Технические

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 25 V 12A (Ta), 78A (Tc) 4.5V, 10V 5.7mOhm @ 30A, 10V 2.5V @ 250µA 24 nC @ 4.5 V ±20V 1960 pF @ 12 V - 1.31W (Ta), 56.6W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4857N-35G

NTD4857N-35G

MOSFET N-CH 25V 12A/78A IPAK

onsemi
3,472 -

RFQ

NTD4857N-35G

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 25 V 12A (Ta), 78A (Tc) 4.5V, 10V 5.7mOhm @ 30A, 10V 2.5V @ 250µA 24 nC @ 4.5 V ±20V 1960 pF @ 12 V - 1.31W (Ta), 56.6W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDMC86265P

FDMC86265P

MOSFET P-CH 150V 1A/1.8A 8MLP

onsemi
3,963 -

RFQ

FDMC86265P

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 150 V 1A (Ta), 1.8A (Tc) 6V, 10V 1.2Ohm @ 1A, 10V 4V @ 250µA 4 nC @ 10 V ±25V 210 pF @ 75 V - 2.3W (Ta), 16W (Tc) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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