Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SPD50P03LGBTMA1

SPD50P03LGBTMA1

MOSFET P-CH 30V 50A TO252-5

Infineon Technologies
2,496 -

RFQ

SPD50P03LGBTMA1

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 10V 7mOhm @ 50A, 10V 2V @ 250µA 126 nC @ 10 V ±20V 6880 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NVMYS3D3N06CLTWG

NVMYS3D3N06CLTWG

MOSFET N-CH 60V 26A/133A 4LFPAK

onsemi
2,997 -

RFQ

NVMYS3D3N06CLTWG

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 26A (Ta), 133A (Tc) 4.5V, 10V 3mOhm @ 50A, 10V 2V @ 250µA 40.7 nC @ 10 V ±20V 2880 pF @ 25 V - 3.9W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU210PBF

IRFU210PBF

MOSFET N-CH 200V 2.6A TO251AA

Vishay Siliconix
9,000 -

RFQ

IRFU210PBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 2.6A (Tc) 10V 1.5Ohm @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU014PBF

IRFU014PBF

MOSFET N-CH 60V 7.7A TO251AA

Vishay Siliconix
3,497 -

RFQ

IRFU014PBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 7.7A (Tc) 10V 200mOhm @ 4.6A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 300 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFD9014PBF

IRFD9014PBF

MOSFET P-CH 60V 1.1A 4DIP

Vishay Siliconix
2,493 -

RFQ

IRFD9014PBF

Технические

Tube - Active P-Channel MOSFET (Metal Oxide) 60 V 1.1A (Ta) 10V 500mOhm @ 660mA, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) Through Hole
IRFD9010PBF

IRFD9010PBF

MOSFET P-CH 50V 1.1A 4DIP

Vishay Siliconix
3,976 -

RFQ

IRFD9010PBF

Технические

Tube - Active P-Channel MOSFET (Metal Oxide) 50 V 1.1A (Tc) 10V 500mOhm @ 580mA, 10V 4V @ 250µA 11 nC @ 10 V ±20V 240 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIR880DP-T1-GE3

SIR880DP-T1-GE3

MOSFET N-CH 80V 60A PPAK SO-8

Vishay Siliconix
2,402 -

RFQ

SIR880DP-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 80 V 60A (Tc) 4.5V, 10V 5.9mOhm @ 20A, 10V 2.8V @ 250µA 74 nC @ 10 V ±20V 2440 pF @ 40 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TP2435N8-G

TP2435N8-G

MOSFET P-CH 350V 231MA TO243AA

Microchip Technology
2,081 -

RFQ

TP2435N8-G

Технические

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 350 V 231mA (Tj) 3V, 10V 15Ohm @ 500mA, 10V 2.4V @ 1mA - ±20V 200 pF @ 25 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
STL110N10F7

STL110N10F7

MOSFET N-CH 100V 107A POWERFLAT

STMicroelectronics
3,199 -

RFQ

STL110N10F7

Технические

Tape & Reel (TR),Cut Tape (CT) DeepGATE™, STripFET™ VII Active N-Channel MOSFET (Metal Oxide) 100 V 107A (Tc) 10V 6mOhm @ 10A, 10V 4.5V @ 250µA 72 nC @ 10 V ±20V 5117 pF @ 50 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK32E12N1,S1X

TK32E12N1,S1X

MOSFET N CH 120V 60A TO-220

Toshiba Semiconductor and Storage
2,959 -

RFQ

TK32E12N1,S1X

Технические

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 120 V 60A (Tc) 10V 13.8mOhm @ 16A, 10V 4V @ 500µA 34 nC @ 10 V ±20V 2000 pF @ 60 V - 98W (Tc) 150°C (TJ) Through Hole
TK32A12N1,S4X

TK32A12N1,S4X

MOSFET N-CH 120V 32A TO220SIS

Toshiba Semiconductor and Storage
3,907 -

RFQ

TK32A12N1,S4X

Технические

Tube U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 120 V 32A (Tc) 10V 13.8mOhm @ 16A, 10V 4V @ 500µA 34 nC @ 10 V ±20V 2000 pF @ 60 V - 30W (Tc) 150°C (TJ) Through Hole
IRF6727MTRPBF

IRF6727MTRPBF

MOSFET N-CH 30V 32A DIRECTFET

Infineon Technologies
3,750 -

RFQ

IRF6727MTRPBF

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 32A (Ta), 180A (Tc) 4.5V, 10V 1.7mOhm @ 32A, 10V 2.35V @ 100µA 74 nC @ 4.5 V ±20V 6190 pF @ 15 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
SI7858ADP-T1-GE3

SI7858ADP-T1-GE3

MOSFET N-CH 12V 20A PPAK SO-8

Vishay Siliconix
3,156 -

RFQ

SI7858ADP-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 12 V 20A (Ta) 2.5V, 4.5V 2.6mOhm @ 29A, 4.5V 1.5V @ 250µA 80 nC @ 4.5 V ±8V 5700 pF @ 6 V - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSC028N06NSSCATMA1

BSC028N06NSSCATMA1

MOSFET N-CH 60V 100A TDSON

Infineon Technologies
2,527 -

RFQ

BSC028N06NSSCATMA1

Технические

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 6V, 10V 2.8mOhm @ 50A, 10V 3.3V @ 50µA 49 nC @ 10 V ±20V 3375 pF @ 30 V - 2.5W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STD105N10F7AG

STD105N10F7AG

MOSFET N-CH 100V 80A DPAK

STMicroelectronics
3,170 -

RFQ

STD105N10F7AG

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, STripFET™ F7 Active N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 10V 8mOhm @ 40A, 10V 4.5V @ 250µA 61 nC @ 10 V ±20V 4369 pF @ 50 V - 120W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF840BPBF

IRF840BPBF

MOSFET N-CH 500V 8.7A TO220AB

Vishay Siliconix
2,267 -

RFQ

IRF840BPBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 8.7A (Tc) 10V 850mOhm @ 4A, 10V 5V @ 250µA 30 nC @ 10 V ±30V 527 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
SQD90P04-9M4L_GE3

SQD90P04-9M4L_GE3

MOSFET P-CH 40V 90A TO252AA

Vishay Siliconix
3,824 -

RFQ

SQD90P04-9M4L_GE3

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 4.5V, 10V 9.4mOhm @ 17A, 10V 2.5V @ 250µA 155 nC @ 10 V ±20V 6675 pF @ 20 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TN2540N3-G

TN2540N3-G

MOSFET N-CH 400V 175MA TO92-3

Microchip Technology
2,320 -

RFQ

TN2540N3-G

Технические

Bag - Active N-Channel MOSFET (Metal Oxide) 400 V 175mA (Tj) 4.5V, 10V 12Ohm @ 500mA, 10V 2V @ 1mA - ±20V 125 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
STP4LN80K5

STP4LN80K5

MOSFET N-CHANNEL 800V 3A TO220

STMicroelectronics
2,128 -

RFQ

STP4LN80K5

Технические

Tube MDmesh™ K5 Active N-Channel MOSFET (Metal Oxide) 800 V 3A (Tc) 10V 2.6Ohm @ 1A, 10V 5V @ 100µA 3.7 nC @ 10 V ±30V 122 pF @ 100 V - 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI7370DP-T1-GE3

SI7370DP-T1-GE3

MOSFET N-CH 60V 9.6A PPAK SO-8

Vishay Siliconix
3,680 -

RFQ

SI7370DP-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 9.6A (Ta) 10V 11mOhm @ 12A, 10V 4V @ 250µA 57 nC @ 10 V ±20V - - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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