Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFBE20PBF

IRFBE20PBF

MOSFET N-CH 800V 1.8A TO220AB

Vishay Siliconix
2,016 -

RFQ

IRFBE20PBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 1.8A (Tc) 10V 6.5Ohm @ 1.1A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 530 pF @ 25 V - 54W (Tc) -55°C ~ 150°C (TJ) Through Hole
SQD50P08-28_GE3

SQD50P08-28_GE3

MOSFET P-CH 80V 48A TO252AA

Vishay Siliconix
3,042 -

RFQ

SQD50P08-28_GE3

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 80 V 48A (Tc) 10V 28mOhm @ 12.5A, 10V 3.5V @ 250µA 145 nC @ 10 V ±20V 6035 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD046N08N5ATMA1

IPD046N08N5ATMA1

MOSFET N-CH 80V 90A TO252-3

Infineon Technologies
3,159 -

RFQ

IPD046N08N5ATMA1

Технические

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 90A (Tc) 6V, 10V 4.6mOhm @ 45A, 10V 3.8V @ 65µA 53 nC @ 10 V ±20V 3800 pF @ 40 V - 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STL210N4LF7AG

STL210N4LF7AG

MOSFET N-CH 40V 120A POWERFLAT

STMicroelectronics
2,672 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, STripFET™ F7 Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 4.5V, 10V 1.6mOhm @ 30A, 10V 2.5V @ 250µA 56 nC @ 10 V ±20V 4210 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR7843TRRPBF

IRLR7843TRRPBF

MOSFET N-CH 30V 161A DPAK

Infineon Technologies
2,873 -

RFQ

IRLR7843TRRPBF

Технические

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 161A (Tc) 4.5V, 10V 3.3mOhm @ 15A, 10V 2.3V @ 250µA 50 nC @ 4.5 V ±20V 4380 pF @ 15 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR3412TRLPBF

IRFR3412TRLPBF

MOSFET N-CH 100V 48A DPAK

Infineon Technologies
2,150 -

RFQ

IRFR3412TRLPBF

Технические

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 48A (Tc) 10V 25mOhm @ 29A, 10V 5.5V @ 250µA 89 nC @ 10 V ±20V 3430 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR3412TRRPBF

IRFR3412TRRPBF

MOSFET N-CH 100V 48A DPAK

Infineon Technologies
2,131 -

RFQ

IRFR3412TRRPBF

Технические

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 48A (Tc) 10V 25mOhm @ 29A, 10V 5.5V @ 250µA 89 nC @ 10 V ±20V 3430 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR4104TRRPBF

IRFR4104TRRPBF

MOSFET N-CH 40V 42A DPAK

Infineon Technologies
2,204 -

RFQ

IRFR4104TRRPBF

Технические

Tape & Reel (TR),Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) 10V 5.5mOhm @ 42A, 10V 4V @ 250µA 89 nC @ 10 V ±20V 2950 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR2905TRRPBF

IRLR2905TRRPBF

MOSFET N-CH 55V 42A DPAK

Infineon Technologies
2,630 -

RFQ

IRLR2905TRRPBF

Технические

Tape & Reel (TR) HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4V, 10V 27mOhm @ 25A, 10V 2V @ 250µA 48 nC @ 5 V ±16V 1700 pF @ 25 V - 110W (Tc) - Surface Mount
IRFR3710ZTRRPBF

IRFR3710ZTRRPBF

MOSFET N-CH 100V 42A DPAK

Infineon Technologies
2,535 -

RFQ

IRFR3710ZTRRPBF

Технические

Tape & Reel (TR) HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 10V 18mOhm @ 33A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 2930 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR8503TRLPBF

IRLR8503TRLPBF

MOSFET N-CH 30V 44A DPAK

Infineon Technologies
2,787 -

RFQ

IRLR8503TRLPBF

Технические

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 44A (Tc) 4.5V, 10V 16mOhm @ 15A, 10V 3V @ 250µA 20 nC @ 5 V ±20V 1650 pF @ 25 V - 62W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR7833CTRLPBF

IRLR7833CTRLPBF

MOSFET N-CH 30V 140A DPAK

Infineon Technologies
2,329 -

RFQ

IRLR7833CTRLPBF

Технические

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 140A (Ta) 4.5V, 10V - - - ±20V - - 140W (Tc) - Surface Mount
IRLR7833CTRRPBF

IRLR7833CTRRPBF

MOSFET N-CH 30V 140A DPAK

Infineon Technologies
3,286 -

RFQ

IRLR7833CTRRPBF

Технические

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 140A (Ta) 4.5V, 10V - - - ±20V - - 140W (Tc) - Surface Mount
FDP5N50

FDP5N50

MOSFET N-CH 500V 5A TO220-3

onsemi
3,442 -

RFQ

FDP5N50

Технические

Tube UniFET™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.4Ohm @ 2.5A, 10V 5V @ 250µA 15 nC @ 10 V ±30V 640 pF @ 25 V - 85W (Tc) -55°C ~ 150°C (TJ) Through Hole
MTM981400BBF

MTM981400BBF

MOSFET P-CH 40V 7A SO8-F1-B

Panasonic Electronic Components
3,351 -

RFQ

MTM981400BBF

Технические

Tape & Reel (TR),Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 40 V 7A (Ta) 4.5V, 10V 25mOhm @ 7A, 10V 2.5V @ 1mA - ±20V 2700 pF @ 10 V - 2W (Ta) 150°C (TJ) Surface Mount
MTM861270LBF

MTM861270LBF

MOSFET P-CH 20V 2A WSSMINI6-F1

Panasonic Electronic Components
2,431 -

RFQ

MTM861270LBF

Технические

Tape & Reel (TR),Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 2A (Ta) 1.8V, 4V 120mOhm @ 1A, 4V 1.1V @ 1mA - ±10V 300 pF @ 10 V - 540mW (Ta) 150°C (TJ) Surface Mount
MTM862270LBF

MTM862270LBF

MOSFET N-CH 20V 2.2A WSSMINI6-F1

Panasonic Electronic Components
2,102 -

RFQ

MTM862270LBF

Технические

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 2.2A (Ta) 1.8V, 4V 105mOhm @ 1A, 4V 1.3V @ 1mA - ±10V 280 pF @ 10 V - 540mW (Ta) 150°C (TJ) Surface Mount
MTM867270LBF

MTM867270LBF

MOSFET N-CH 20V 2.2A WSSMINI6-F1

Panasonic Electronic Components
3,216 -

RFQ

MTM867270LBF

Технические

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 2.2A (Ta) 2.5V, 4V 105mOhm @ 1A, 4V 1.3V @ 1mA - ±10V 280 pF @ 10 V - 540mW (Ta) 150°C (TJ) Surface Mount
IXFH9N80

IXFH9N80

MOSFET N-CH 800V 9A TO247AD

IXYS
3,776 -

RFQ

IXFH9N80

Технические

Tube HiPerFET™ Active N-Channel MOSFET (Metal Oxide) 800 V 9A (Tc) 10V 900mOhm @ 500mA, 10V 4.5V @ 2.5mA 130 nC @ 10 V ±20V 2600 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDC636P

FDC636P

MOSFET P-CH 20V 2.8A SUPERSOT6

onsemi
3,231 -

RFQ

FDC636P

Технические

Tape & Reel (TR),Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 2.8A (Ta) 2.5V, 4.5V 130mOhm @ 2.8A, 4.5V 1V @ 250µA 8.5 nC @ 4.5 V ±8V 390 pF @ 10 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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