Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRLR3717TRPBF

IRLR3717TRPBF

MOSFET N-CH 20V 120A DPAK

Infineon Technologies
3,327 -

RFQ

IRLR3717TRPBF

Технические

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 120A (Tc) 4.5V, 10V 4mOhm @ 15A, 10V 2.45V @ 250µA 31 nC @ 4.5 V ±20V 2830 pF @ 10 V - 89W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR12N25DTRPBF

IRFR12N25DTRPBF

MOSFET N-CH 250V 14A DPAK

Infineon Technologies
3,021 -

RFQ

IRFR12N25DTRPBF

Технические

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 260mOhm @ 8.4A, 10V 5V @ 250µA 35 nC @ 10 V ±30V 810 pF @ 25 V - 144W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR3412TRPBF

IRFR3412TRPBF

MOSFET N-CH 100V 48A DPAK

Infineon Technologies
3,125 -

RFQ

IRFR3412TRPBF

Технические

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 48A (Tc) 10V 25mOhm @ 29A, 10V 5.5V @ 250µA 89 nC @ 10 V ±20V 3430 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF2804STRR7PP

IRF2804STRR7PP

MOSFET N-CH 40V 160A D2PAK

Infineon Technologies
2,562 -

RFQ

IRF2804STRR7PP

Технические

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 10V 1.6mOhm @ 160A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 6930 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR3418TRPBF

IRFR3418TRPBF

MOSFET N-CH 80V 70A DPAK

Infineon Technologies
3,434 -

RFQ

IRFR3418TRPBF

Технические

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 70A (Tc) 10V 14mOhm @ 18A, 10V 5.5V @ 250µA 94 nC @ 10 V ±20V 3510 pF @ 25 V - 3.8W (Ta), 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6100PBF

IRF6100PBF

MOSFET P-CH 20V 5.1A 4FLIPFET

Infineon Technologies
3,485 -

RFQ

IRF6100PBF

Технические

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 5.1A (Ta) 2.5V, 4.5V 65mOhm @ 5.1A, 4.5V 1.2V @ 250µA 21 nC @ 5 V ±12V 1230 pF @ 15 V - 2.2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF6722STRPBF

IRF6722STRPBF

MOSFET N-CH 30V 13A DIRECTFET

Infineon Technologies
3,122 -

RFQ

IRF6722STRPBF

Технические

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta), 58A (Tc) 4.5V, 10V 7.3mOhm @ 13A, 10V 2.4V @ 50µA 17 nC @ 4.5 V ±20V 1320 pF @ 15 V - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6722MTRPBF

IRF6722MTRPBF

MOSFET N-CH 30V 13A DIRECTFET

Infineon Technologies
3,153 -

RFQ

IRF6722MTRPBF

Технические

Tape & Reel (TR) HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta), 56A (Tc) 4.5V, 10V 7.7mOhm @ 13A, 10V 2.4V @ 50µA 17 nC @ 4.5 V ±20V 1300 pF @ 15 V - 2.3W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6710S2TRPBF

IRF6710S2TRPBF

MOSFET N-CH 25V 12A DIRECTFET

Infineon Technologies
2,401 -

RFQ

IRF6710S2TRPBF

Технические

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 12A (Ta), 37A (Tc) 4.5V, 10V 5.9mOhm @ 12A, 10V 2.4V @ 25µA 13 nC @ 4.5 V ±20V 1190 pF @ 13 V - 1.8W (Ta), 15W (Tc) -55°C ~ 175°C (TJ) Surface Mount
DMN5L06T-7

DMN5L06T-7

MOSFET N-CH 50V 280MA SOT-523

Diodes Incorporated
2,546 -

RFQ

DMN5L06T-7

Технические

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 50 V 280mA (Ta) 1.8V, 2.7V 3Ohm @ 200mA, 2.7V 1.2V @ 250µA - ±20V 50 pF @ 25 V - 150mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMN5L06W-7

DMN5L06W-7

MOSFET N-CH 50V 280MA SOT323

Diodes Incorporated
3,525 -

RFQ

DMN5L06W-7

Технические

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 50 V 280mA (Ta) 1.8V, 2.7V 3Ohm @ 200mA, 2.7V 1.2V @ 250µA - ±20V 50 pF @ 25 V - 200mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMP3100L-7

DMP3100L-7

MOSFET P-CH 30V 2.7A SOT23-3

Diodes Incorporated
3,990 -

RFQ

DMP3100L-7

Технические

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 2.7A (Ta) 4.5V, 10V 100mOhm @ 2.7A, 10V 2.1V @ 250µA - ±20V 227 pF @ 10 V - 1.08W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDI025N06

FDI025N06

MOSFET N-CH 60V 265A I2PAK

onsemi
3,372 -

RFQ

FDI025N06

Технические

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 265A (Tc) 10V 2.5mOhm @ 75A, 10V 4.5V @ 250µA 226 nC @ 10 V ±20V 14885 pF @ 25 V - 395W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDMS8880

FDMS8880

MOSFET N-CH 30V 13.5A/21A 8PQFN

onsemi
2,893 -

RFQ

FDMS8880

Технические

Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT) PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13.5A (Ta), 21A (Tc) 4.5V, 10V 8.5mOhm @ 13.5A, 10V 2.5V @ 250µA 33 nC @ 10 V ±20V 1585 pF @ 15 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPA057N08N3GXKSA1

IPA057N08N3GXKSA1

MOSFET N-CH 80V 60A TO220-FP

Infineon Technologies
2,016 -

RFQ

IPA057N08N3GXKSA1

Технические

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 60A (Tc) 6V, 10V 5.7mOhm @ 60A, 10V 3.5V @ 90µA 69 nC @ 10 V ±20V 4750 pF @ 40 V - 39W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFS3004TRLPBF

IRFS3004TRLPBF

MOSFET N-CH 40V 195A D2PAK

Infineon Technologies
2,913 -

RFQ

IRFS3004TRLPBF

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Ta) 10V 1.75mOhm @ 195A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 9200 pF @ 25 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STB13N80K5

STB13N80K5

MOSFET N-CH 800V 12A D2PAK

STMicroelectronics
2,518 -

RFQ

STB13N80K5

Технические

Tape & Reel (TR),Cut Tape (CT) SuperMESH5™ Active N-Channel MOSFET (Metal Oxide) 800 V 12A (Tc) 10V 450mOhm @ 6A, 10V 5V @ 100µA 29 nC @ 10 V ±30V 870 pF @ 100 V - 190W (Tc) -55°C ~ 150°C (TJ) Surface Mount
HUF75645P3

HUF75645P3

MOSFET N-CH 100V 75A TO220-3

onsemi
3,852 -

RFQ

HUF75645P3

Технические

Bulk,Tube UltraFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 14mOhm @ 75A, 10V 4V @ 250µA 238 nC @ 20 V ±20V 3790 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Through Hole
BTS244ZE3062AATMA2

BTS244ZE3062AATMA2

MOSFET N-CH 55V 35A TO263-5

Infineon Technologies
3,703 -

RFQ

BTS244ZE3062AATMA2

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk TEMPFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 55 V 35A (Tc) 4.5V, 10V 13mOhm @ 19A, 10V 2V @ 130µA 130 nC @ 10 V ±20V 2660 pF @ 25 V Temperature Sensing Diode 170W (Tc) -40°C ~ 175°C (TJ) Surface Mount
FDP18N50

FDP18N50

MOSFET N-CH 500V 18A TO220-3

onsemi
2,962 -

RFQ

FDP18N50

Технические

Bulk,Tube UniFET™ Active N-Channel MOSFET (Metal Oxide) 500 V 18A (Tc) 10V 265mOhm @ 9A, 10V 5V @ 250µA 60 nC @ 10 V ±30V 2860 pF @ 25 V - 235W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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