| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPA95R750P7XKSA1MOSFET N-CH 950V 9A TO220 Infineon Technologies |
3,699 | - |
RFQ |
Технические |
Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 950 V | 9A (Tc) | 10V | 750mOhm @ 4.5A, 10V | 3.5V @ 220µA | 23 nC @ 10 V | ±20V | 712 pF @ 400 V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
IPL60R199CPAUMA1MOSFET N-CH 650V 16.4A 4VSON Infineon Technologies |
2,570 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 16.4A (Tc) | 10V | 199mOhm @ 9.9A, 10V | 3.5V @ 660µA | 32 nC @ 10 V | ±20V | 1520 pF @ 100 V | - | 139W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
|
STB12NM50T4MOSFET N-CH 550V 12A D2PAK STMicroelectronics |
3,753 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | MDmesh™ | Active | N-Channel | MOSFET (Metal Oxide) | 550 V | 12A (Tc) | 10V | 350mOhm @ 6A, 10V | 5V @ 50µA | 39 nC @ 10 V | ±30V | 1000 pF @ 25 V | - | 160W (Tc) | -65°C ~ 150°C (TJ) | Surface Mount |
|
|
IXTA110N055T2MOSFET N-CH 55V 110A TO263 IXYS |
2,136 | - |
RFQ |
Технические |
Tube | TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 110A (Tc) | 10V | 6.6mOhm @ 25A, 10V | 4V @ 250µA | 57 nC @ 10 V | ±20V | 3060 pF @ 25 V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
FCP11N60MOSFET N-CH 600V 11A TO220-3 onsemi |
3,055 | - |
RFQ |
Технические |
Bulk,Tube | SuperFET™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 380mOhm @ 5.5A, 10V | 5V @ 250µA | 52 nC @ 10 V | ±30V | 1490 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IRF7523D1TRPBFMOSFET N-CH 30V 2.7A MICRO8 Infineon Technologies |
2,689 | - |
RFQ |
Технические |
Tape & Reel (TR) | FETKY™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 2.7A (Ta) | 4.5V, 10V | 130mOhm @ 1.7A, 10V | 1V @ 250µA | 12 nC @ 10 V | ±20V | 210 pF @ 25 V | Schottky Diode (Isolated) | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRFS33N15DTRLPMOSFET N-CH 150V 33A D2PAK Infineon Technologies |
3,186 | - |
RFQ |
Технические |
Tape & Reel (TR),Bulk | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 33A (Tc) | 10V | 56mOhm @ 20A, 10V | 5.5V @ 250µA | 90 nC @ 10 V | ±30V | 2020 pF @ 25 V | - | 3.8W (Ta), 170W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IRFS3507TRLPBFMOSFET N-CH 75V 97A D2PAK Infineon Technologies |
3,862 | - |
RFQ |
Технические |
Tape & Reel (TR) | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 97A (Tc) | 10V | 8.8mOhm @ 58A, 10V | 4V @ 100µA | 130 nC @ 10 V | ±20V | 3540 pF @ 50 V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IRF7521D1TRPBFMOSFET N-CH 20V 2.4A MICRO8 Infineon Technologies |
3,754 | - |
RFQ |
Технические |
Tape & Reel (TR) | FETKY™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 2.4A (Ta) | 2.7V, 4.5V | 135mOhm @ 1.7A, 4.5V | 700mV @ 250µA (Min) | 8 nC @ 4.5 V | ±12V | 260 pF @ 15 V | Schottky Diode (Isolated) | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRLR3714ZTRPBFMOSFET N-CH 20V 37A DPAK Infineon Technologies |
3,182 | - |
RFQ |
Технические |
Tape & Reel (TR) | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 37A (Tc) | 4.5V, 10V | 15mOhm @ 15A, 10V | 2.55V @ 250µA | 7.1 nC @ 4.5 V | ±20V | 560 pF @ 10 V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IRL3716STRLPBFMOSFET N-CH 20V 180A D2PAK Infineon Technologies |
2,648 | - |
RFQ |
Технические |
Tape & Reel (TR) | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 180A (Tc) | 4.5V, 10V | 4mOhm @ 90A, 10V | 3V @ 250µA | 79 nC @ 4.5 V | ±20V | 5090 pF @ 10 V | - | 210W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IRLR014NTRPBFMOSFET N-CH 55V 10A DPAK Infineon Technologies |
3,695 | - |
RFQ |
Технические |
Tape & Reel (TR) | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 10A (Tc) | 4.5V, 10V | 140mOhm @ 6A, 10V | 1V @ 250µA | 7.9 nC @ 5 V | ±16V | 265 pF @ 25 V | - | 28W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IRFR3911TRPBFMOSFET N-CH 100V 14A DPAK Infineon Technologies |
2,530 | - |
RFQ |
Технические |
Tape & Reel (TR) | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 14A (Tc) | 10V | 115mOhm @ 8.4A, 10V | 4V @ 250µA | 32 nC @ 10 V | ±20V | 740 pF @ 25 V | - | 56W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IRFSL33N15DTRRPMOSFET N-CH 150V 33A TO262 Infineon Technologies |
3,565 | - |
RFQ |
Технические |
Tape & Reel (TR) | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 33A (Tc) | 10V | 56mOhm @ 20A, 10V | 5.5V @ 250µA | 90 nC @ 10 V | ±30V | 2020 pF @ 25 V | - | 3.8W (Ta), 170W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
IRF6604TR1MOSFET N-CH 30V 12A DIRECTFET Infineon Technologies |
2,237 | - |
RFQ |
Технические |
Tape & Reel (TR) | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 12A (Ta), 49A (Tc) | 4.5V, 7V | 11.5mOhm @ 12A, 7V | 2.1V @ 250µA | 26 nC @ 4.5 V | ±12V | 2270 pF @ 15 V | - | 2.3W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
|
IRLR3715TRPBFMOSFET N-CH 20V 54A DPAK Infineon Technologies |
2,487 | - |
RFQ |
Технические |
Tape & Reel (TR) | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 54A (Tc) | 4.5V, 10V | 14mOhm @ 26A, 10V | 3V @ 250µA | 17 nC @ 4.5 V | ±20V | 1060 pF @ 10 V | - | 3.8W (Ta), 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IRFR13N15DTRPBFMOSFET N-CH 150V 14A DPAK Infineon Technologies |
3,727 | - |
RFQ |
Технические |
Tape & Reel (TR),Bulk | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 14A (Tc) | 10V | 180mOhm @ 8.3A, 10V | 5.5V @ 250µA | 29 nC @ 10 V | ±30V | 620 pF @ 25 V | - | 86W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IRF6603TR1MOSFET N-CH 30V 27A DIRECTFET Infineon Technologies |
3,171 | - |
RFQ |
Технические |
Tape & Reel (TR) | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 27A (Ta), 92A (Tc) | 4.5V, 10V | 3.4mOhm @ 25A, 10V | 2.5V @ 250µA | 72 nC @ 4.5 V | +20V, -12V | 6590 pF @ 15 V | - | 3.6W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
|
IRF6607TR1MOSFET N-CH 30V 27A DIRECTFET Infineon Technologies |
2,677 | - |
RFQ |
Технические |
Tape & Reel (TR) | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 27A (Ta), 94A (Tc) | 4.5V, 7V | 3.3mOhm @ 25A, 10V | 2V @ 250µA | 75 nC @ 4.5 V | ±12V | 6930 pF @ 15 V | - | 3.6W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
|
IRFR3707ZCTRLPMOSFET N-CH 30V 56A DPAK Infineon Technologies |
3,872 | - |
RFQ |
Технические |
Tape & Reel (TR) | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 56A (Tc) | 4.5V, 10V | 9.5mOhm @ 15A, 10V | 2.25V @ 25µA | 14 nC @ 4.5 V | ±20V | 1150 pF @ 15 V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |