Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FQPF6N90C

FQPF6N90C

MOSFET N-CH 900V 6A TO220F

onsemi
3,532 -

RFQ

FQPF6N90C

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 900 V 6A (Tc) 10V 2.3Ohm @ 3A, 10V 5V @ 250µA 40 nC @ 10 V ±30V 1770 pF @ 25 V - 56W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG17N80AE-GE3

SIHG17N80AE-GE3

MOSFET N-CH 800V 15A TO247AC

Vishay Siliconix
3,133 -

RFQ

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 15A (Tc) 10V 290mOhm @ 8.5A, 10V 4V @ 250µA 62 nC @ 10 V ±30V 1260 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Through Hole
SUP90N06-6M0P-E3

SUP90N06-6M0P-E3

MOSFET N-CH 60V 90A TO220AB

Vishay Siliconix
2,185 -

RFQ

SUP90N06-6M0P-E3

Технические

Tube TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 10V 6mOhm @ 20A, 10V 4.5V @ 250µA 120 nC @ 10 V ±20V 4700 pF @ 30 V - 3.75W (Ta), 272W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPA60R280P6XKSA1

IPA60R280P6XKSA1

MOSFET N-CH 600V 13.8A TO220-FP

Infineon Technologies
3,524 -

RFQ

IPA60R280P6XKSA1

Технические

Bulk,Tube CoolMOS™ P6 Active N-Channel MOSFET (Metal Oxide) 600 V 13.8A (Tc) 10V 280mOhm @ 5.2A, 10V 4.5V @ 430µA 25.5 nC @ 10 V ±20V 1190 pF @ 100 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
STB21N65M5

STB21N65M5

MOSFET N-CH 650V 17A D2PAK

STMicroelectronics
2,493 -

RFQ

STB21N65M5

Технические

Tape & Reel (TR),Cut Tape (CT) MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 17A (Tc) 10V 190mOhm @ 8.5A, 10V 5V @ 250µA 50 nC @ 10 V ±25V 1950 pF @ 100 V - 125W (Tc) 150°C (TJ) Surface Mount
STB23N80K5

STB23N80K5

MOSFET N-CH 800V 16A D2PAK

STMicroelectronics
3,064 -

RFQ

STB23N80K5

Технические

Tape & Reel (TR),Cut Tape (CT) MDmesh™ K5 Active N-Channel MOSFET (Metal Oxide) 800 V 16A (Tc) 10V 280mOhm @ 8A, 10V 5V @ 100µA 33 nC @ 10 V ±30V 1000 pF @ 100 V - 190W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTB095N65S3HF

NTB095N65S3HF

MOSFET N-CH 650V 36A D2PAK-3

onsemi
2,750 -

RFQ

NTB095N65S3HF

Технические

Tape & Reel (TR),Cut Tape (CT) FRFET®, SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 36A (Tc) 10V 95mOhm @ 18A, 10V 5V @ 860µA 66 nC @ 10 V ±30V 2930 pF @ 400 V - 272W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHA25N50E-E3

SIHA25N50E-E3

MOSFET N-CH 500V 26A TO220

Vishay Siliconix
2,558 -

RFQ

SIHA25N50E-E3

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 26A (Tc) 10V 145mOhm @ 12A, 10V 4V @ 250µA 86 nC @ 10 V ±30V 1980 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
IAUT240N08S5N019ATMA1

IAUT240N08S5N019ATMA1

MOSFET N-CH 80V 240A 8HSOF

Infineon Technologies
2,538 -

RFQ

IAUT240N08S5N019ATMA1

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™-5 Active N-Channel MOSFET (Metal Oxide) 80 V 240A (Tc) 6V, 10V 1.9mOhm @ 100A, 10V 3.8V @ 160µA 130 nC @ 10 V ±20V 9264 pF @ 40 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
CSD18536KTT

CSD18536KTT

MOSFET N-CH 60V 200A DDPAK

Texas Instruments
3,018 -

RFQ

CSD18536KTT

Технические

Tape & Reel (TR),Cut Tape (CT) NexFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 200A (Ta) 4.5V, 10V 1.6mOhm @ 100A, 10V 2.2V @ 250µA 140 nC @ 10 V ±20V 11430 pF @ 30 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQPF7N65C_F105

FQPF7N65C_F105

MOSFET N-CH 650V 7A TO220F

onsemi
3,623 -

RFQ

FQPF7N65C_F105

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 1.4Ohm @ 3.5A, 10V 4V @ 250µA 36 nC @ 10 V ±30V 1245 pF @ 25 V - 52W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF8N60CT

FQPF8N60CT

MOSFET N-CH 600V 7.5A TO220F

onsemi
3,520 -

RFQ

FQPF8N60CT

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 7.5A (Tc) 10V 1.2Ohm @ 3.75A, 10V 4V @ 250µA 36 nC @ 10 V ±30V 1255 pF @ 25 V - 48W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF9N25CYDTU

FQPF9N25CYDTU

MOSFET N-CH 250V 8.8A TO220F-3

onsemi
2,729 -

RFQ

FQPF9N25CYDTU

Технические

Tube,Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 8.8A (Tc) 10V 430mOhm @ 4.4A, 10V 4V @ 250µA 35 nC @ 10 V ±30V 710 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF9N50CYDTU

FQPF9N50CYDTU

MOSFET N-CH 500V 9A TO220F-3

onsemi
3,088 -

RFQ

FQPF9N50CYDTU

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 9A (Tc) 10V 800mOhm @ 4.5A, 10V 4V @ 250µA 35 nC @ 10 V ±30V 1030 pF @ 25 V - 44W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF9N90C

FQPF9N90C

MOSFET N-CH 900V 8A TO220F

onsemi
3,251 -

RFQ

FQPF9N90C

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 900 V 8A (Tc) 10V 1.4Ohm @ 4A, 10V 5V @ 250µA 58 nC @ 10 V ±30V 2730 pF @ 25 V - 68W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHB17N80E-T1-GE3

SIHB17N80E-T1-GE3

MOSFET N-CH 800V 15A D2PAK

Vishay Siliconix
3,474 -

RFQ

SIHB17N80E-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 800 V 15A (Tc) 10V 290mOhm @ 8.5A, 10V 4V @ 250µA 122 nC @ 10 V ±30V 2408 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQU3N50CTU

FQU3N50CTU

MOSFET N-CH 500V 2.5A IPAK

onsemi
2,993 -

RFQ

FQU3N50CTU

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 2.5A (Tc) 10V 2.5Ohm @ 1.25A, 10V 4V @ 250µA 13 nC @ 10 V ±30V 365 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP80N10T

IXTP80N10T

MOSFET N-CH 100V 80A TO220AB

IXYS
2,316 -

RFQ

IXTP80N10T

Технические

Tube Trench Active N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 10V 14mOhm @ 25A, 10V 5V @ 100µA 60 nC @ 10 V ±20V 3040 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPP07N60C3XKSA1

SPP07N60C3XKSA1

MOSFET N-CH 650V 7.3A TO220-3

Infineon Technologies
3,160 -

RFQ

SPP07N60C3XKSA1

Технические

Bulk,Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 7.3A (Tc) 10V 600mOhm @ 4.6A, 10V 3.9V @ 350µA 27 nC @ 10 V ±20V 790 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOTF20S60L

AOTF20S60L

MOSFET N-CH 600V 20A TO220-3F

Alpha & Omega Semiconductor Inc.
2,850 -

RFQ

AOTF20S60L

Технические

Tube aMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 199mOhm @ 10A, 10V 4.1V @ 250µA 19.8 nC @ 10 V ±30V 1038 pF @ 100 V - 37.8W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1800+ производители
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