Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF7702TRPBF

IRF7702TRPBF

MOSFET P-CH 12V 8A 8TSSOP

Infineon Technologies
3,765 -

RFQ

IRF7702TRPBF

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 12 V 8A (Tc) 1.8V, 4.5V 14mOhm @ 8A, 4.5V 1.2V @ 250µA 81 nC @ 4.5 V ±8V 3470 pF @ 10 V - 1.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STP85N3LH5

STP85N3LH5

MOSFET N-CH 30V 80A TO220AB

STMicroelectronics
2,973 -

RFQ

STP85N3LH5

Технические

Tube STripFET™ V Obsolete N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 5V, 10V 5.4mOhm @ 40A, 10V 2.5V @ 250µA 14 nC @ 5 V ±22V 1850 pF @ 25 V - 70W (Tc) 175°C (TJ) Through Hole
IPP120P04P4L03AKSA1

IPP120P04P4L03AKSA1

MOSFET P-CH 40V 120A TO220-3

Infineon Technologies
3,521 -

RFQ

IPP120P04P4L03AKSA1

Технические

Tube Automotive, AEC-Q101, OptiMOS™ Not For New Designs P-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 4.5V, 10V 3.4mOhm @ 100A, 10V 2.2V @ 340µA 234 nC @ 10 V ±16V 15000 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP120P04P4L03AKSA2

IPP120P04P4L03AKSA2

MOSFET P-CH 40V 120A TO220-3

Infineon Technologies
3,971 -

RFQ

IPP120P04P4L03AKSA2

Технические

Tube OptiMOS®-P2 Active P-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 4.5V, 10V 3.4mOhm @ 100A, 10V 2.2V @ 340µA 234 nC @ 10 V +5V, -16V 15000 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
TK25E60X,S1X

TK25E60X,S1X

MOSFET N-CH 600V 25A TO220

Toshiba Semiconductor and Storage
3,839 -

RFQ

TK25E60X,S1X

Технические

Tube DTMOSIV-H Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Ta) 10V 125mOhm @ 7.5A, 10V 3.5V @ 1.2mA 40 nC @ 10 V ±30V 2400 pF @ 300 V - 180W (Tc) 150°C (TJ) Through Hole
STP22NM60N

STP22NM60N

MOSFET N-CH 600V 16A TO220AB

STMicroelectronics
3,289 -

RFQ

STP22NM60N

Технические

Tube MDmesh™ II Active N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 220mOhm @ 8A, 10V 4V @ 100µA 44 nC @ 10 V ±30V 1300 pF @ 50 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHF22N60E-GE3

SIHF22N60E-GE3

MOSFET N-CH 600V 21A TO220

Vishay Siliconix
2,535 -

RFQ

SIHF22N60E-GE3

Технические

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 86 nC @ 10 V ±30V 1920 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA60R190C6XKSA1

IPA60R190C6XKSA1

MOSFET N-CH 600V 20.2A TO220-FP

Infineon Technologies
2,807 -

RFQ

IPA60R190C6XKSA1

Технические

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 20.2A (Tc) 10V 190mOhm @ 9.5A, 10V 3.5V @ 630µA 63 nC @ 10 V ±20V 1400 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA80R280P7XKSA1

IPA80R280P7XKSA1

MOSFET N-CH 800V 17A TO220-3F

Infineon Technologies
2,430 -

RFQ

IPA80R280P7XKSA1

Технические

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Tc) 10V 280mOhm @ 7.2A, 10V 3.5V @ 360µA 36 nC @ 10 V ±20V 1200 pF @ 500 V Super Junction 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP80R280P7XKSA1

IPP80R280P7XKSA1

MOSFET N-CH 800V 17A TO220-3

Infineon Technologies
3,730 -

RFQ

IPP80R280P7XKSA1

Технические

Bulk,Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Tc) 10V 280mOhm @ 7.2A, 10V 3.5V @ 360µA 36 nC @ 10 V ±20V 1200 pF @ 500 V Super Junction 101W (Tc) -55°C ~ 150°C (TJ) Through Hole
STB40N60M2

STB40N60M2

MOSFET N-CH 600V 34A D2PAK

STMicroelectronics
3,360 -

RFQ

STB40N60M2

Технические

Tape & Reel (TR),Cut Tape (CT) MDmesh™ II Plus Active N-Channel MOSFET (Metal Oxide) 600 V 34A (Tc) 10V 88mOhm @ 17A, 10V 4V @ 250µA 57 nC @ 10 V ±25V 2500 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTP90N15T

IXTP90N15T

MOSFET N-CH 150V 90A TO220AB

IXYS
3,526 -

RFQ

IXTP90N15T

Технические

Tube Trench Active N-Channel MOSFET (Metal Oxide) 150 V 90A (Tc) 10V 20mOhm @ 45A, 10V 4.5V @ 1mA 80 nC @ 10 V ±30V 4100 pF @ 25 V - 455W (Tc) -55°C ~ 175°C (TJ) Through Hole
VN2224N3-G

VN2224N3-G

MOSFET N-CH 240V 540MA TO92-3

Microchip Technology
3,873 -

RFQ

VN2224N3-G

Технические

Bag - Active N-Channel MOSFET (Metal Oxide) 240 V 540mA (Tj) 5V, 10V 1.25Ohm @ 2A, 10V 3V @ 5mA - ±20V 350 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHB22N60E-GE3

SIHB22N60E-GE3

MOSFET N-CH 600V 21A D2PAK

Vishay Siliconix
3,609 -

RFQ

SIHB22N60E-GE3

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 86 nC @ 10 V ±30V 1920 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STF7NM80

STF7NM80

MOSFET N-CH 800V 6.5A TO220FP

STMicroelectronics
3,965 -

RFQ

STF7NM80

Технические

Tube MDmesh™ Active N-Channel MOSFET (Metal Oxide) 800 V 6.5A (Tc) 10V 1.05Ohm @ 3.25A, 10V 5V @ 250µA 18 nC @ 10 V ±30V 620 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW46NF30

STW46NF30

MOSFET N-CH 300V 42A TO247

STMicroelectronics
2,999 -

RFQ

STW46NF30

Технические

Tube STripFET™ II Active N-Channel MOSFET (Metal Oxide) 300 V 42A (Tc) 10V 75mOhm @ 17A, 10V 4V @ 250µA 90 nC @ 10 V ±20V 3200 pF @ 25 V - 300W (Tc) 175°C (TJ) Through Hole
STB30N65M5

STB30N65M5

MOSFET N-CH 650V 22A D2PAK

STMicroelectronics
3,101 -

RFQ

STB30N65M5

Технические

Tape & Reel (TR),Cut Tape (CT) MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 22A (Tc) 10V 139mOhm @ 11A, 10V 5V @ 250µA 64 nC @ 10 V ±25V 2880 pF @ 100 V - 140W (Tc) 150°C (TJ) Surface Mount
IRFP140PBF

IRFP140PBF

MOSFET N-CH 100V 31A TO247-3

Vishay Siliconix
2,509 -

RFQ

IRFP140PBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 31A (Tc) 10V 77mOhm @ 19A, 10V 4V @ 250µA 72 nC @ 10 V ±20V 1700 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Through Hole
STP140NF75

STP140NF75

MOSFET N-CH 75V 120A TO220AB

STMicroelectronics
3,239 -

RFQ

STP140NF75

Технические

Tube STripFET™ III Active N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 7.5mOhm @ 70A, 10V 4V @ 250µA 218 nC @ 10 V ±20V 5000 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL4010PBF

IRFSL4010PBF

MOSFET N-CH 100V 180A TO262

Infineon Technologies
2,668 -

RFQ

IRFSL4010PBF

Технические

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 4.7mOhm @ 106A, 10V 4V @ 250µA 215 nC @ 10 V ±20V 9575 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
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