Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
STB16N90K5

STB16N90K5

MOSFET N-CH 900V 15A D2PAK

STMicroelectronics
3,624 -

RFQ

STB16N90K5

Технические

Tape & Reel (TR),Cut Tape (CT) MDmesh™ K5 Active N-Channel MOSFET (Metal Oxide) 900 V 15A (Tc) 10V 330mOhm @ 7.5A, 10V 5V @ 100µA 29.7 nC @ 10 V ±30V 1027 pF @ 100 V - 190W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AOK60N30L

AOK60N30L

MOSFET N-CH 300V 60A TO247

Alpha & Omega Semiconductor Inc.
2,116 -

RFQ

AOK60N30L

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 300 V 60A (Tc) 10V 56mOhm @ 30A, 10V 4.1V @ 250µA 106 nC @ 10 V ±30V 5330 pF @ 25 V - 658W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB60R099C7ATMA1

IPB60R099C7ATMA1

MOSFET N-CH 650V 22A TO263-3

Infineon Technologies
3,708 -

RFQ

IPB60R099C7ATMA1

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 22A (Tc) 10V 99mOhm @ 9.7A, 10V 4V @ 490µA 42 nC @ 10 V ±20V 1819 pF @ 400 V - 110W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STF13N80K5

STF13N80K5

MOSFET N-CH 800V 12A TO220FP

STMicroelectronics
2,193 -

RFQ

STF13N80K5

Технические

Tube SuperMESH5™ Active N-Channel MOSFET (Metal Oxide) 800 V 12A (Tc) 10V 450mOhm @ 6A, 10V 5V @ 100µA 29 nC @ 10 V ±30V 870 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDA69N25

FDA69N25

MOSFET N-CH 250V 69A TO3PN

onsemi
3,839 -

RFQ

FDA69N25

Технические

Bulk,Tube UniFET™ Active N-Channel MOSFET (Metal Oxide) 250 V 69A (Tc) 10V 41mOhm @ 34.5A, 10V 5V @ 250µA 100 nC @ 10 V ±30V 4640 pF @ 25 V - 480W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP65R190CFDXKSA1

IPP65R190CFDXKSA1

MOSFET N-CH 650V 17.5A TO220-3

Infineon Technologies
2,618 -

RFQ

IPP65R190CFDXKSA1

Технические

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 17.5A (Tc) 10V 190mOhm @ 7.3A, 10V 4.5V @ 730µA 68 nC @ 10 V ±20V 1850 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK16A60W,S4VX

TK16A60W,S4VX

MOSFET N-CH 600V 15.8A TO220SIS

Toshiba Semiconductor and Storage
3,573 -

RFQ

TK16A60W,S4VX

Технические

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 190mOhm @ 7.9A, 10V 3.7V @ 790µA 38 nC @ 10 V ±30V 1350 pF @ 300 V Super Junction 40W (Tc) 150°C (TJ) Through Hole
IRFP254PBF

IRFP254PBF

MOSFET N-CH 250V 23A TO247-3

Vishay Siliconix
1,620 -

RFQ

IRFP254PBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 250 V 23A (Tc) 10V 140mOhm @ 14A, 10V 4V @ 250µA 140 nC @ 10 V ±20V 2700 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
SUP70101EL-GE3

SUP70101EL-GE3

MOSFET P-CH 100V 120A TO220AB

Vishay Siliconix
2,009 -

RFQ

SUP70101EL-GE3

Технические

Tube TrenchFET® Active P-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 4.5V, 10V - 2.5V @ 250µA 190 nC @ 10 V ±20V 7000 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
FCP190N60E

FCP190N60E

MOSFET N-CH 600V 20.6A TO220-3

onsemi
3,328 -

RFQ

FCP190N60E

Технические

Tube SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 20.6A (Tc) 10V 190mOhm @ 10A, 10V 3.5V @ 250µA 82 nC @ 10 V ±20V 3175 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW23NM60ND

STW23NM60ND

MOSFET N-CH 600V 19.5A TO247-3

STMicroelectronics
3,571 -

RFQ

STW23NM60ND

Технические

Tube FDmesh™ II Obsolete N-Channel MOSFET (Metal Oxide) 600 V 19.5A (Tc) 10V 180mOhm @ 10A, 10V 5V @ 250µA 70 nC @ 10 V ±25V 2050 pF @ 50 V - 150W (Tc) 150°C (TJ) Through Hole
STW25NM60ND

STW25NM60ND

MOSFET N-CH 600V 21A TO247-3

STMicroelectronics
2,935 -

RFQ

STW25NM60ND

Технические

Tube FDmesh™ II Obsolete N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 160mOhm @ 10.5A, 10V 5V @ 250µA 80 nC @ 10 V ±25V 2400 pF @ 50 V - 160W (Tc) 150°C (TJ) Through Hole
STW30NM60ND

STW30NM60ND

MOSFET N-CH 600V 25A TO247-3

STMicroelectronics
3,962 -

RFQ

STW30NM60ND

Технические

Tube FDmesh™ II Obsolete N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 130mOhm @ 12.5A, 10V 5V @ 250µA 100 nC @ 10 V ±25V 2800 pF @ 50 V - 190W (Tc) 150°C (TJ) Through Hole
STW43NM50N

STW43NM50N

MOSFET N-CH 500V 37A TO247-3

STMicroelectronics
3,004 -

RFQ

STW43NM50N

Технические

Tube MDmesh™ II Obsolete N-Channel MOSFET (Metal Oxide) 500 V 37A (Tc) 10V 85mOhm @ 18.5A, 10V 4V @ 250µA 140 nC @ 10 V ±25V 4200 pF @ 50 V - 255W (Tc) 150°C (TJ) Through Hole
STW43NM60N

STW43NM60N

MOSFET N-CH 600V 35A TO247-3

STMicroelectronics
3,134 -

RFQ

STW43NM60N

Технические

Tube MDmesh™ II Obsolete N-Channel MOSFET (Metal Oxide) 600 V 35A (Tc) 10V 88mOhm @ 17.5A, 10V 5V @ 250µA 130 nC @ 10 V ±30V 4200 pF @ 50 V - 255W (Tc) 150°C (TJ) Through Hole
STW43NM60ND

STW43NM60ND

MOSFET N-CH 600V 35A TO247-3

STMicroelectronics
2,659 -

RFQ

STW43NM60ND

Технические

Tube FDmesh™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 35A (Tc) 10V 88mOhm @ 17.5A, 10V 5V @ 250µA 145 nC @ 10 V ±25V 4300 pF @ 50 V - 255W (Tc) 150°C (TJ) Through Hole
STW55NM50N

STW55NM50N

MOSFET N-CH 500V 54A TO247-3

STMicroelectronics
3,892 -

RFQ

STW55NM50N

Технические

Tube MDmesh™ II Obsolete N-Channel MOSFET (Metal Oxide) 500 V 54A (Tc) 10V 54mOhm @ 27A, 10V 4V @ 250µA 180 nC @ 10 V ±25V 5800 pF @ 50 V - 350W (Tc) 150°C (TJ) Through Hole
STW75NF30

STW75NF30

MOSFET N-CH 300V 60A TO247-3

STMicroelectronics
3,483 -

RFQ

STW75NF30

Технические

Tube STripFET™ Obsolete N-Channel MOSFET (Metal Oxide) 300 V 60A (Tc) 10V 45mOhm @ 30A, 10V 4V @ 250µA 164 nC @ 10 V ±20V 5930 pF @ 25 V - 320W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW90NF20

STW90NF20

MOSFET N-CH 200V 83A TO247-3

STMicroelectronics
3,741 -

RFQ

STW90NF20

Технические

Tube STripFET™ Obsolete N-Channel MOSFET (Metal Oxide) 200 V 83A (Tc) 10V 23mOhm @ 45A, 10V 4V @ 250µA 164 nC @ 10 V ±20V 5736 pF @ 25 V - 300W (Tc) -50°C ~ 150°C (TJ) Through Hole
STY80NM60N

STY80NM60N

MOSFET N-CH 600V 74A MAX247

STMicroelectronics
2,256 -

RFQ

STY80NM60N

Технические

Tube MDmesh™ II Obsolete N-Channel MOSFET (Metal Oxide) 600 V 74A (Tc) 10V 35mOhm @ 37A, 10V 4V @ 250µA 360 nC @ 10 V ±25V 10100 pF @ 50 V - 447W (Tc) 150°C (TJ) Through Hole
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
Нахождение Чипа

Главная

Нахождение Чипа

Продукт

Нахождение Чипа

Телефон

Нахождение Чипа

Пользователь