Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTH120P065T

IXTH120P065T

MOSFET P-CH 65V 120A TO247

IXYS
3,299 -

RFQ

IXTH120P065T

Технические

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 65 V 120A (Tc) 10V 10mOhm @ 500mA, 10V 4V @ 250µA 185 nC @ 10 V ±15V 13200 pF @ 25 V - 298W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA6N100D2

IXTA6N100D2

MOSFET N-CH 1000V 6A TO263

IXYS
2,044 -

RFQ

IXTA6N100D2

Технические

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 1000 V 6A (Tc) - 2.2Ohm @ 3A, 0V - 95 nC @ 5 V ±20V 2650 pF @ 25 V Depletion Mode 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPI075N15N3GXKSA1

IPI075N15N3GXKSA1

MOSFET N-CH 150V 100A TO262-3

Infineon Technologies
2,322 -

RFQ

IPI075N15N3GXKSA1

Технические

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 150 V 100A (Tc) 8V, 10V 7.5mOhm @ 100A, 10V 4V @ 270µA 93 nC @ 10 V ±20V 5470 pF @ 75 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP120N20NFDAKSA1

IPP120N20NFDAKSA1

MOSFET N-CH 200V 84A TO220-3

Infineon Technologies
3,480 -

RFQ

IPP120N20NFDAKSA1

Технические

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 200 V 84A (Tc) 10V 12mOhm @ 84A, 10V 4V @ 270µA 87 nC @ 10 V ±20V 6650 pF @ 100 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB048N15N5ATMA1

IPB048N15N5ATMA1

MOSFET N-CH 150V 120A TO263-3

Infineon Technologies
2,431 -

RFQ

IPB048N15N5ATMA1

Технические

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 150 V 120A (Tc) 8V, 10V 4.8mOhm @ 60A, 10V 4.6V @ 264µA 100 nC @ 10 V ±20V 7800 pF @ 75 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFP31N50LPBF

IRFP31N50LPBF

MOSFET N-CH 500V 31A TO247-3

Vishay Siliconix
3,719 -

RFQ

IRFP31N50LPBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 31A (Tc) 10V 180mOhm @ 19A, 10V 5V @ 250µA 210 nC @ 10 V ±30V 5000 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW18NM80

STW18NM80

MOSFET N-CH 800V 17A TO247-3

STMicroelectronics
3,300 -

RFQ

STW18NM80

Технические

Tube MDmesh™ Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Tc) 10V 295mOhm @ 8.5A, 10V 5V @ 250µA 70 nC @ 10 V ±30V 2070 pF @ 50 V - 190W (Tc) 150°C (TJ) Through Hole
TK31N60X,S1F

TK31N60X,S1F

MOSFET N-CH 600V 30.8A TO247

Toshiba Semiconductor and Storage
3,342 -

RFQ

TK31N60X,S1F

Технические

Tube DTMOSIV-H Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 88mOhm @ 9.4A, 10V 3.5V @ 1.5mA 65 nC @ 10 V ±30V 3000 pF @ 300 V Super Junction 230W (Tc) 150°C (TJ) Through Hole
IXFP60N25X3

IXFP60N25X3

MOSFET N-CH 250V 60A TO220AB

IXYS
2,810 -

RFQ

IXFP60N25X3

Технические

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 250 V 60A (Tc) 10V 23mOhm @ 30A, 10V 4.5V @ 1.5mA 50 nC @ 10 V ±20V 3610 pF @ 25 V - 320W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF45N65M5

STF45N65M5

MOSFET N-CH 650V 35A TO220FP

STMicroelectronics
2,024 -

RFQ

STF45N65M5

Технические

Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 35A (Tc) 10V 78mOhm @ 19.5A, 10V 5V @ 250µA 91 nC @ 10 V ±25V 3375 pF @ 100 V - 40W (Tc) 150°C (TJ) Through Hole
SIHG47N60AE-GE3

SIHG47N60AE-GE3

MOSFET N-CH 600V 43A TO247AC

Vishay Siliconix
3,692 -

RFQ

SIHG47N60AE-GE3

Технические

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 43A (Tc) 10V 65mOhm @ 24A, 10V 4V @ 250µA 182 nC @ 10 V ±30V 3600 pF @ 100 V - 313W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW22N95K5

STW22N95K5

MOSFET N-CH 950V 17.5A TO247

STMicroelectronics
2,389 -

RFQ

STW22N95K5

Технические

Tube Automotive, AEC-Q101, SuperMESH5™ Active N-Channel MOSFET (Metal Oxide) 950 V 17.5A (Tc) 10V 330mOhm @ 9A, 10V 5V @ 100µA 48 nC @ 10 V ±30V 1550 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFA22N65X2

IXFA22N65X2

MOSFET N-CH 650V 22A TO263

IXYS
900 -

RFQ

IXFA22N65X2

Технические

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 22A (Tc) 10V 160mOhm @ 11A, 10V 5.5V @ 1.5mA 38 nC @ 10 V ±30V 2310 pF @ 25 V - 390W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFA60N25X3

IXFA60N25X3

MOSFET N-CH 250V 60A TO263AA

IXYS
2,867 -

RFQ

IXFA60N25X3

Технические

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 250 V 60A (Tc) 10V 23mOhm @ 30A, 10V 4.5V @ 1.5mA 50 nC @ 10 V ±20V 3610 pF @ 25 V - 320W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STW20NM50FD

STW20NM50FD

MOSFET N-CH 500V 20A TO247-3

STMicroelectronics
3,168 -

RFQ

STW20NM50FD

Технические

Tube FDmesh™ Active N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 250mOhm @ 10A, 10V 5V @ 250µA 53 nC @ 10 V ±30V 1380 pF @ 25 V - 214W (Tc) 150°C (TJ) Through Hole
STW8N120K5

STW8N120K5

MOSFET N-CH 1200V 6A TO247

STMicroelectronics
3,240 -

RFQ

STW8N120K5

Технические

Tube MDmesh™ K5 Active N-Channel MOSFET (Metal Oxide) 1200 V 6A (Tc) 10V 2Ohm @ 2.5A, 10V 5V @ 100µA 13.7 nC @ 10 V - 505 pF @ 100 V - 130W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTHL160N120SC1

NTHL160N120SC1

SICFET N-CH 1200V 17A TO247-3

onsemi
450 -

RFQ

NTHL160N120SC1

Технические

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 17A (Tc) 20V 224mOhm @ 12A, 20V 4.3V @ 2.5mA 34 nC @ 20 V +25V, -15V 665 pF @ 800 V - 119W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFP72N20X3M

IXFP72N20X3M

MOSFET N-CH 200V 72A TO220

IXYS
2,593 -

RFQ

IXFP72N20X3M

Технические

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 200 V 72A (Tc) 10V 20mOhm @ 36A, 10V 4.5V @ 1.5mA 55 nC @ 10 V ±20V 3780 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW20N95K5

STW20N95K5

MOSFET N-CH 950V 17.5A TO247-3

STMicroelectronics
2,694 -

RFQ

STW20N95K5

Технические

Tube SuperMESH5™ Active N-Channel MOSFET (Metal Oxide) 950 V 17.5A (Tc) 10V 330mOhm @ 9A, 10V 5V @ 100µA 40 nC @ 10 V ±30V 1500 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW52NK25Z

STW52NK25Z

MOSFET N-CH 250V 52A TO247-3

STMicroelectronics
3,752 -

RFQ

STW52NK25Z

Технические

Tube SuperMESH™ Not For New Designs N-Channel MOSFET (Metal Oxide) 250 V 52A (Tc) 10V 45mOhm @ 26A, 10V 4.5V @ 150µA 160 nC @ 10 V ±30V 4850 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
Нахождение Чипа

Главная

Нахождение Чипа

Продукт

Нахождение Чипа

Телефон

Нахождение Чипа

Пользователь