Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFH140N10P

IXFH140N10P

MOSFET N-CH 100V 140A TO247AD

IXYS
2,489 -

RFQ

IXFH140N10P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 100 V 140A (Tc) 10V 11mOhm @ 70A, 10V 5V @ 4mA 155 nC @ 10 V ±20V 4700 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFP72N30X3

IXFP72N30X3

MOSFET N-CH 300V 72A TO220AB

IXYS
3,483 -

RFQ

IXFP72N30X3

Технические

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 300 V 72A (Tc) 10V 19mOhm @ 36A, 10V 4.5V @ 1.5mA 82 nC @ 10 V ±20V 5400 pF @ 25 V - 390W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH140P05T

IXTH140P05T

MOSFET P-CH 50V 140A TO247

IXYS
3,946 -

RFQ

IXTH140P05T

Технические

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 50 V 140A (Tc) 10V 9mOhm @ 70A, 10V 4V @ 250µA 200 nC @ 10 V ±15V 13500 pF @ 25 V - 298W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFP72N30X3M

IXFP72N30X3M

MOSFET N-CH 300V 72A TO220

IXYS
3,280 -

RFQ

IXFP72N30X3M

Технические

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 300 V 72A (Tc) 10V 19mOhm @ 36A, 10V 4.5V @ 1.5mA 82 nC @ 10 V ±20V 5400 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP60R090CFD7XKSA1

IPP60R090CFD7XKSA1

MOSFET N-CH 600V 25A TO220-3

Infineon Technologies
300 -

RFQ

IPP60R090CFD7XKSA1

Технические

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 90mOhm @ 11.4A, 10V 4.5V @ 570µA 51 nC @ 10 V ±20V 2103 pF @ 400 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP6N50D2

IXTP6N50D2

MOSFET N-CH 500V 6A TO220AB

IXYS
2,564 -

RFQ

IXTP6N50D2

Технические

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 500 V 6A (Tc) - 500mOhm @ 3A, 0V - 96 nC @ 5 V ±20V 2800 pF @ 25 V Depletion Mode 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP6N100D2

IXTP6N100D2

MOSFET N-CH 1000V 6A TO220AB

IXYS
2,978 -

RFQ

IXTP6N100D2

Технические

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 1000 V 6A (Tc) - 2.2Ohm @ 3A, 0V - 95 nC @ 5 V ±20V 2650 pF @ 25 V Depletion Mode 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP4137PBF

IRFP4137PBF

MOSFET N-CH 300V 38A TO247AC

Infineon Technologies
3,201 -

RFQ

IRFP4137PBF

Технические

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 300 V 38A (Tc) 10V 69mOhm @ 24A, 10V 5V @ 250µA 125 nC @ 10 V ±20V 5168 pF @ 50 V - 341W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFH26N50P3

IXFH26N50P3

MOSFET N-CH 500V 26A TO247AD

IXYS
3,069 -

RFQ

IXFH26N50P3

Технические

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 26A (Tc) 10V 230mOhm @ 13A, 10V 5V @ 4mA 42 nC @ 10 V ±30V 2220 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP23N50LPBF

IRFP23N50LPBF

MOSFET N-CH 500V 23A TO247-3

Vishay Siliconix
3,740 -

RFQ

IRFP23N50LPBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 23A (Tc) 10V 235mOhm @ 14A, 10V 5V @ 250µA 150 nC @ 10 V ±30V 3600 pF @ 25 V - 370W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP5NK65ZFP

STP5NK65ZFP

MOSFET N-CH 650V 4.5A TO220FP

STMicroelectronics
3,008 -

RFQ

STP5NK65ZFP

Технические

Tube SuperMESH™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 4.5A (Tc) 10V 1.8Ohm @ 2.1A, 10V 4.5V @ 50µA 35 nC @ 10 V ±30V 680 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF20NF06L

STF20NF06L

MOSFET N-CH 60V 20A TO220FP

STMicroelectronics
3,549 -

RFQ

STF20NF06L

Технические

Tube STripFET™ II Obsolete N-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 5V, 10V 70mOhm @ 10A, 10V 4V @ 250µA 7.5 nC @ 10 V ±18V 400 pF @ 25 V - 28W (Tc) -55°C ~ 175°C (TJ) Through Hole
STP36NF06FP

STP36NF06FP

MOSFET N-CH 60V 18A TO220FP

STMicroelectronics
2,722 -

RFQ

STP36NF06FP

Технические

Tube STripFET™ II Obsolete N-Channel MOSFET (Metal Oxide) 60 V 18A (Tc) 10V 40mOhm @ 15A, 10V 4V @ 250µA 31 nC @ 10 V ±20V 690 pF @ 25 V - 25W (Tc) -55°C ~ 175°C (TJ) Through Hole
STP8NS25FP

STP8NS25FP

MOSFET N-CH 250V 8A TO220FP

STMicroelectronics
2,961 -

RFQ

STP8NS25FP

Технические

Tube MESH OVERLAY™ Obsolete N-Channel MOSFET (Metal Oxide) 250 V 8A (Tc) 10V 450mOhm @ 4A, 10V 4V @ 250µA 51.8 nC @ 10 V ±20V 770 pF @ 25 V - 30W (Tc) 150°C (TJ) Through Hole
STI90N4F3

STI90N4F3

MOSFET N-CH 40V 80A I2PAK

STMicroelectronics
2,640 -

RFQ

STI90N4F3

Технические

Tube STripFET™ III Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 6.5mOhm @ 40A, 10V 4V @ 250µA 54 nC @ 10 V ±20V 2200 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
STP70N10F4

STP70N10F4

MOSFET N-CH 100V 65A TO220-3

STMicroelectronics
2,318 -

RFQ

STP70N10F4

Технические

Tube DeepGATE™, STripFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 65A (Tc) 10V 19.5mOhm @ 30A, 10V 4V @ 250µA 85 nC @ 10 V ±20V 5800 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
STP5NK60ZFP

STP5NK60ZFP

MOSFET N-CH 600V 5A TO220FP

STMicroelectronics
3,668 -

RFQ

STP5NK60ZFP

Технические

Tube SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 600 V 5A (Tc) 10V 1.6Ohm @ 2.5A, 10V 4.5V @ 50µA 34 nC @ 10 V ±30V 690 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF3N62K3

STF3N62K3

MOSFET N-CH 620V 2.7A TO220FP

STMicroelectronics
3,389 -

RFQ

STF3N62K3

Технические

Tube SuperMESH3™ Active N-Channel MOSFET (Metal Oxide) 620 V 2.7A (Tc) 10V 2.5Ohm @ 1.4A, 10V 4.5V @ 50µA 13 nC @ 10 V ±30V 385 pF @ 25 V - 20W (Tc) 150°C (TJ) Through Hole
STU60N55F3

STU60N55F3

MOSFET N-CH 55V 80A IPAK

STMicroelectronics
3,939 -

RFQ

STU60N55F3

Технические

Tube STripFET™ III Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 8.5mOhm @ 32A, 10V 4V @ 250µA 45 nC @ 10 V ±20V 2200 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
STD1NK80Z-1

STD1NK80Z-1

MOSFET N-CH 800V 1A IPAK

STMicroelectronics
3,528 -

RFQ

STD1NK80Z-1

Технические

Tube SuperMESH™ Obsolete N-Channel MOSFET (Metal Oxide) 800 V 1A (Tc) 10V 16Ohm @ 500mA, 10V 4.5V @ 50µA 7.7 nC @ 10 V ±30V 160 pF @ 25 V - 45W (Tc) -55°C ~ 150°C (TJ) Through Hole
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20,000.000 Продукты
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1800+ производители
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15,000+ Складские запасы
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