Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTH10N100D2

IXTH10N100D2

MOSFET N-CH 1000V 10A TO247

IXYS
3,936 -

RFQ

IXTH10N100D2

Технические

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 1000 V 10A (Tc) 10V 1.5Ohm @ 5A, 10V - 200 nC @ 5 V ±20V 5320 pF @ 25 V Depletion Mode 695W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH15N100Q3

IXFH15N100Q3

MOSFET N-CH 1000V 15A TO247AD

IXYS
3,811 -

RFQ

IXFH15N100Q3

Технические

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 1000 V 15A (Tc) 10V 1.05Ohm @ 7.5A, 10V 6.5V @ 4mA 64 nC @ 10 V ±30V 3250 pF @ 25 V - 690W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW26NM50

STW26NM50

MOSFET N-CH 500V 30A TO247-3

STMicroelectronics
3,243 -

RFQ

STW26NM50

Технические

Tube MDmesh™ Not For New Designs N-Channel MOSFET (Metal Oxide) 500 V 30A (Tc) 10V 120mOhm @ 13A, 10V 5V @ 250µA 106 nC @ 10 V ±30V 3000 pF @ 25 V - 313W (Tc) 150°C (TJ) Through Hole
IXFK64N50P

IXFK64N50P

MOSFET N-CH 500V 64A TO264AA

IXYS
3,513 -

RFQ

IXFK64N50P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 500 V 64A (Tc) 10V 85mOhm @ 32A, 10V 5.5V @ 8mA 150 nC @ 10 V ±30V 8700 pF @ 25 V - 830W (Tc) -55°C ~ 150°C (TJ) Through Hole
VN2210N2

VN2210N2

MOSFET N-CH 100V 1.7A TO39

Microchip Technology
2,784 -

RFQ

VN2210N2

Технические

Bag - Active N-Channel MOSFET (Metal Oxide) 100 V 1.7A (Tj) 5V, 10V 350mOhm @ 4A, 10V 2.4V @ 10mA - ±20V 500 pF @ 25 V - 360mW (Tc) -55°C ~ 150°C (TJ) Through Hole
APT5010LLLG

APT5010LLLG

MOSFET N-CH 500V 46A TO264

Microchip Technology
2,192 -

RFQ

APT5010LLLG

Технические

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 500 V 46A (Tc) 10V 100mOhm @ 23A, 10V 5V @ 2.5mA 95 nC @ 10 V ±30V 4360 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFT180N20X3HV

IXFT180N20X3HV

MOSFET N-CH 200V 180A TO268HV

IXYS
2,605 -

RFQ

IXFT180N20X3HV

Технические

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 200 V 180A (Tc) 10V 7.5mOhm @ 90A, 10V 4.5V @ 4mA 154 nC @ 10 V ±20V 10300 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFT120N30X3HV

IXFT120N30X3HV

MOSFET N-CH 300V 120A TO268HV

IXYS
2,451 -

RFQ

IXFT120N30X3HV

Технические

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 300 V 120A (Tc) 10V 11mOhm @ 60A, 10V 4.5V @ 4mA 170 nC @ 10 V ±20V 1376 pF @ 25 V - 735W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTQ170N10P

IXTQ170N10P

MOSFET N-CH 100V 170A TO3P

IXYS
2,441 -

RFQ

IXTQ170N10P

Технические

Tube Polar Active N-Channel MOSFET (Metal Oxide) 100 V 170A (Tc) 10V 9mOhm @ 500mA, 10V 5V @ 250µA 198 nC @ 10 V ±20V 6000 pF @ 25 V - 715W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFK98N50P3

IXFK98N50P3

MOSFET N-CH 500V 98A TO264AA

IXYS
3,134 -

RFQ

IXFK98N50P3

Технические

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 98A (Tc) 10V 50mOhm @ 500mA, 10V 5V @ 8mA 197 nC @ 10 V ±30V 13100 pF @ 25 V - 1300W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW88N65M5

STW88N65M5

MOSFET N-CH 650V 84A TO247-3

STMicroelectronics
2,851 -

RFQ

STW88N65M5

Технические

Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 84A (Tc) 10V 29mOhm @ 42A, 10V 5V @ 250µA 204 nC @ 10 V ±25V 8825 pF @ 100 V - 450W (Tc) 150°C (TJ) Through Hole
IXFX100N65X2

IXFX100N65X2

MOSFET N-CH 650V 100A PLUS247-3

IXYS
2,932 -

RFQ

IXFX100N65X2

Технические

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 100A (Tc) 10V 30mOhm @ 50A, 10V 5.5V @ 4mA 180 nC @ 10 V ±30V 11300 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK100N65X2

IXFK100N65X2

MOSFET N-CH 650V 100A TO264

IXYS
2,106 -

RFQ

IXFK100N65X2

Технические

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 100A (Tc) 10V 30mOhm @ 50A, 10V 5.5V @ 4mA 180 nC @ 10 V ±30V 11300 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX180N25T

IXFX180N25T

MOSFET N-CH 250V 180A PLUS247-3

IXYS
456 -

RFQ

IXFX180N25T

Технические

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 250 V 180A (Tc) 10V 12.9mOhm @ 60A, 10V 5V @ 8mA 345 nC @ 10 V ±20V 28000 pF @ 25 V - 1390W (Tc) -55°C ~ 150°C (TJ) Through Hole
SCTWA35N65G2V

SCTWA35N65G2V

TRANS SJT N-CH 650V 45A TO247

STMicroelectronics
3,733 -

RFQ

SCTWA35N65G2V

Технические

Tube - Active N-Channel SiCFET (Silicon Carbide) 650 V 45A (Tc) 18V, 20V 72mOhm @ 20A, 20V 3.2V @ 1mA 73 nC @ 20 V +20V, -5V 73000 pF @ 400 V - 208W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFK160N30T

IXFK160N30T

MOSFET N-CH 300V 160A TO264AA

IXYS
2,350 -

RFQ

IXFK160N30T

Технические

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 300 V 160A (Tc) 10V 19mOhm @ 60A, 10V 5V @ 8mA 335 nC @ 10 V ±20V 28000 pF @ 25 V - 1390W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH2N170D2

IXTH2N170D2

MOSFET N-CH 1700V 2A TO247

IXYS
2,549 -

RFQ

IXTH2N170D2

Технические

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 1700 V 2A (Tj) 0V 6.5Ohm @ 1A, 0V - 110 nC @ 5 V ±20V 3650 pF @ 10 V Depletion Mode 568W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR64N60P

IXFR64N60P

MOSFET N-CH 600V 36A ISOPLUS247

IXYS
3,695 -

RFQ

IXFR64N60P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 600 V 36A (Tc) 10V 105mOhm @ 32A, 10V 5V @ 8mA 200 nC @ 10 V ±30V 12000 pF @ 25 V - 320W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTT68P20T

IXTT68P20T

MOSFET P-CH 200V 68A TO268

IXYS
2,829 -

RFQ

IXTT68P20T

Технические

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 200 V 68A (Tc) 10V 55mOhm @ 34A, 10V 4V @ 250µA 380 nC @ 10 V ±15V 33400 pF @ 25 V - 568W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFX420N10T

IXFX420N10T

MOSFET N-CH 100V 420A PLUS247-3

IXYS
3,058 -

RFQ

IXFX420N10T

Технические

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 100 V 420A (Tc) 10V 2.6mOhm @ 60A, 10V 5V @ 8mA 670 nC @ 10 V ±20V 47000 pF @ 25 V - 1670W (Tc) -55°C ~ 175°C (TJ) Through Hole
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