Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPW65R037C6FKSA1

IPW65R037C6FKSA1

MOSFET N-CH 650V 83.2A TO247-3

Infineon Technologies
240 -

RFQ

IPW65R037C6FKSA1

Технические

Tube CoolMOS™ C6 Active N-Channel MOSFET (Metal Oxide) 650 V 83.2A (Tc) 10V 37mOhm @ 33.1A, 10V 3.5V @ 3.3mA 330 nC @ 10 V ±20V 7240 pF @ 100 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH12N100L

IXTH12N100L

MOSFET N-CH 1000V 12A TO247

IXYS
3,100 -

RFQ

IXTH12N100L

Технические

Tube Linear Active N-Channel MOSFET (Metal Oxide) 1000 V 12A (Tc) 20V 1.3Ohm @ 500mA, 20V 5V @ 250µA 155 nC @ 20 V ±30V 2500 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK32N100X

IXFK32N100X

MOSFET N-CH 1000V 32A TO264

IXYS
3,474 -

RFQ

IXFK32N100X

Технические

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 1000 V 32A (Tc) 10V 220mOhm @ 16A, 10V 6V @ 4mA 130 nC @ 10 V ±30V 4075 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX94N50P2

IXFX94N50P2

MOSFET N-CH 500V 94A PLUS247-3

IXYS
2,070 -

RFQ

IXFX94N50P2

Технические

Tube HiPerFET™, PolarP2™ Active N-Channel MOSFET (Metal Oxide) 500 V 94A (Tc) 10V 55mOhm @ 500mA, 10V 5V @ 8mA 220 nC @ 10 V ±30V 13700 pF @ 25 V - 1300W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT37M100L

APT37M100L

MOSFET N-CH 1000V 37A TO264

Microchip Technology
3,928 -

RFQ

APT37M100L

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 1000 V 37A (Tc) 10V 330mOhm @ 18A, 10V 5V @ 2.5mA 305 nC @ 10 V ±30V 9835 pF @ 25 V - 1135W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTK120N25P

IXTK120N25P

MOSFET N-CH 250V 120A TO264

IXYS
3,430 -

RFQ

IXTK120N25P

Технические

Tube Polar Active N-Channel MOSFET (Metal Oxide) 250 V 120A (Tc) 10V 24mOhm @ 60A, 10V 5V @ 500µA 185 nC @ 10 V ±20V 8000 pF @ 25 V - 700W (Tc) -55°C ~ 175°C (TJ) Through Hole
IMZ120R045M1XKSA1

IMZ120R045M1XKSA1

SICFET N-CH 1200V 52A TO247-4

Infineon Technologies
3,367 -

RFQ

IMZ120R045M1XKSA1

Технические

Tray CoolSiC™ Not For New Designs N-Channel SiCFET (Silicon Carbide) 1200 V 52A (Tc) 15V 59mOhm @ 20A, 15V 5.7V @ 10mA 52 nC @ 15 V +20V, -10V 1900 pF @ 800 V Current Sensing 228W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTX120N65X2

IXTX120N65X2

MOSFET N-CH 650V 120A PLUS247-3

IXYS
2,545 -

RFQ

IXTX120N65X2

Технические

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 120A (Tc) 10V 24mOhm @ 60A, 10V 4.5V @ 8mA 240 nC @ 10 V ±30V 13600 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IMW120R045M1XKSA1

IMW120R045M1XKSA1

SICFET N-CH 1.2KV 52A TO247-3

Infineon Technologies
2,623 -

RFQ

IMW120R045M1XKSA1

Технические

Tube CoolSiC™ Not For New Designs N-Channel SiCFET (Silicon Carbide) 1200 V 52A (Tc) 15V 59mOhm @ 20A, 15V 5.7V @ 10mA 52 nC @ 15 V +20V, -10V 1900 pF @ 800 V - 228W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTK120N65X2

IXTK120N65X2

MOSFET N-CH 650V 120A TO264

IXYS
3,480 -

RFQ

IXTK120N65X2

Технические

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 120A (Tc) 10V 24mOhm @ 60A, 10V 4.5V @ 8mA 240 nC @ 10 V ±30V 13600 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX180N15P

IXFX180N15P

MOSFET N-CH 150V 180A PLUS247-3

IXYS
120 -

RFQ

IXFX180N15P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 150 V 180A (Tc) 10V 11mOhm @ 90A, 10V 5V @ 4mA 240 nC @ 10 V ±20V 7000 pF @ 25 V - 830W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFR80N50P

IXFR80N50P

MOSFET N-CH 500V 45A ISOPLUS247

IXYS
3,532 -

RFQ

IXFR80N50P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 500 V 45A (Tc) 10V 72mOhm @ 40A, 10V 5V @ 8mA 197 nC @ 10 V ±30V 12700 pF @ 25 V - 360W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCH041N65EF-F155

FCH041N65EF-F155

MOSFET N-CH 650V 76A TO247

onsemi
2,255 -

RFQ

FCH041N65EF-F155

Технические

Tube,Tube FRFET®, SuperFET® II Active N-Channel MOSFET (Metal Oxide) 650 V 76A (Tc) 10V 41mOhm @ 38A, 10V 5V @ 7.6mA 298 nC @ 10 V ±20V 12560 pF @ 100 V Super Junction 595W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK120N65X2

IXFK120N65X2

MOSFET N-CH 650V 120A TO264

IXYS
3,220 -

RFQ

IXFK120N65X2

Технические

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 120A (Tc) 10V 24mOhm @ 60A, 10V 5.5V @ 8mA 225 nC @ 10 V ±30V 15500 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFB132N50P3

IXFB132N50P3

MOSFET N-CH 500V 132A PLUS264

IXYS
3,503 -

RFQ

IXFB132N50P3

Технические

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 132A (Tc) 10V 39mOhm @ 66A, 10V 5V @ 8mA 250 nC @ 10 V ±30V 18600 pF @ 25 V - 1890W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFB110N60P3

IXFB110N60P3

MOSFET N-CH 600V 110A PLUS264

IXYS
3,858 -

RFQ

IXFB110N60P3

Технические

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 600 V 110A (Tc) 10V 56mOhm @ 55A, 10V 5V @ 8mA 245 nC @ 10 V ±30V 18000 pF @ 25 V - 1890W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT28M120B2

APT28M120B2

MOSFET N-CH 1200V 29A T-MAX

Microchip Technology
2,777 -

RFQ

APT28M120B2

Технические

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1200 V 29A (Tc) 10V 560mOhm @ 14A, 10V 5V @ 2.5mA 300 nC @ 10 V ±30V 9670 pF @ 25 V - 1135W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX230N20T

IXFX230N20T

MOSFET N-CH 200V 230A PLUS247-3

IXYS
2,314 -

RFQ

IXFX230N20T

Технические

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 200 V 230A (Tc) 10V 7.5mOhm @ 60A, 10V 5V @ 8mA 378 nC @ 10 V ±20V 28000 pF @ 25 V - 1670W (Tc) - Through Hole
IPW60R024P7XKSA1

IPW60R024P7XKSA1

MOSFET N-CH 650V 101A TO247-3-41

Infineon Technologies
3,236 -

RFQ

IPW60R024P7XKSA1

Технические

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 650 V 101A (Tc) 10V 24mOhm @ 42.4A, 10V 4V @ 2.03mA 164 nC @ 10 V ±20V 7144 pF @ 400 V - 291W (Tc) -55°C ~ 150°C (TJ) Through Hole
STY105NM50N

STY105NM50N

MOSFET N-CH 500V 110A MAX247

STMicroelectronics
3,239 -

RFQ

STY105NM50N

Технические

Tube MDmesh™ II Active N-Channel MOSFET (Metal Oxide) 500 V 110A (Tc) 10V 22mOhm @ 52A, 10V 4V @ 250µA 326 nC @ 10 V ±25V 9600 pF @ 100 V - 625W (Tc) -55°C ~ 150°C (TJ) Through Hole
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