Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPI80N04S306AKSA1

IPI80N04S306AKSA1

MOSFET N-CH 40V 80A TO262-3

Infineon Technologies
3,660 -

RFQ

IPI80N04S306AKSA1

Технические

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 5.7mOhm @ 80A, 10V 4V @ 52µA 47 nC @ 10 V ±20V 3250 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80N06S207AKSA1

IPI80N06S207AKSA1

MOSFET N-CH 55V 80A TO262-3

Infineon Technologies
3,000 -

RFQ

IPI80N06S207AKSA1

Технические

Bulk,Tube OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 6.6mOhm @ 68A, 10V 4V @ 180µA 110 nC @ 10 V ±20V 3400 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80N06S208AKSA1

IPI80N06S208AKSA1

MOSFET N-CH 55V 80A TO262-3

Infineon Technologies
3,622 -

RFQ

IPI80N06S208AKSA1

Технические

Tube OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 8mOhm @ 58A, 10V 4V @ 150µA 96 nC @ 10 V ±20V 2860 pF @ 25 V - 215W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80N06S2L05AKSA1

IPI80N06S2L05AKSA1

MOSFET N-CH 55V 80A TO262-3

Infineon Technologies
3,131 -

RFQ

IPI80N06S2L05AKSA1

Технические

Tube OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 4.8mOhm @ 80A, 10V 2V @ 250µA 230 nC @ 10 V ±20V 5700 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80N06S2L11AKSA1

IPI80N06S2L11AKSA1

MOSFET N-CH 55V 80A TO262-3

Infineon Technologies
2,787 -

RFQ

IPI80N06S2L11AKSA1

Технические

Tube OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 11mOhm @ 60A, 10V 2V @ 93µA 80 nC @ 10 V ±20V 2075 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80N08S207AKSA1

IPI80N08S207AKSA1

MOSFET N-CH 75V 80A TO262-3

Infineon Technologies
2,544 -

RFQ

IPI80N08S207AKSA1

Технические

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 10V 7.4mOhm @ 80A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 4700 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI90R1K0C3XKSA1

IPI90R1K0C3XKSA1

MOSFET N-CH 900V 5.7A TO262-3

Infineon Technologies
2,360 -

RFQ

IPI90R1K0C3XKSA1

Технические

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 900 V 5.7A (Tc) 10V 1Ohm @ 3.3A, 10V 3.5V @ 370µA 34 nC @ 10 V ±20V 850 pF @ 100 V - 89W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI90R1K2C3XKSA1

IPI90R1K2C3XKSA1

MOSFET N-CH 900V 5.1A TO262-3

Infineon Technologies
2,166 -

RFQ

IPI90R1K2C3XKSA1

Технические

Bulk,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 900 V 5.1A (Tc) 10V 1.2Ohm @ 2.8A, 10V 3.5V @ 310µA 28 nC @ 10 V ±20V 710 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI90R340C3XKSA1

IPI90R340C3XKSA1

MOSFET N-CH 900V 15A TO262-3

Infineon Technologies
3,749 -

RFQ

IPI90R340C3XKSA1

Технические

Bulk,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 900 V 15A (Tc) 10V 340mOhm @ 9.2A, 10V 3.5V @ 1mA 94 nC @ 10 V ±20V 2400 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI90R500C3XKSA1

IPI90R500C3XKSA1

MOSFET N-CH 900V 11A TO262-3

Infineon Technologies
2,249 -

RFQ

IPI90R500C3XKSA1

Технические

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 900 V 11A (Tc) 10V 500mOhm @ 6.6A, 10V 3.5V @ 740µA 68 nC @ 10 V ±20V 1700 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI90R800C3XKSA1

IPI90R800C3XKSA1

MOSFET N-CH 900V 6.9A TO262-3

Infineon Technologies
16,500 -

RFQ

IPI90R800C3XKSA1

Технические

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 900 V 6.9A (Tc) 10V 800mOhm @ 4.1A, 10V 3.5V @ 460µA 42 nC @ 10 V ±20V 1100 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP05CN10L G

IPP05CN10L G

MOSFET N-CH 100V 100A TO220-3

Infineon Technologies
3,996 -

RFQ

IPP05CN10L G

Технические

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 4.5V, 10V 5.1mOhm @ 100A, 10V 2.4V @ 250µA 163 nC @ 10 V ±20V 15600 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP06CN10LGXKSA1

IPP06CN10LGXKSA1

MOSFET N-CH 100V 100A TO220-3

Infineon Technologies
3,236 -

RFQ

IPP06CN10LGXKSA1

Технические

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 4.5V, 10V 6.2mOhm @ 100A, 10V 2.4V @ 180µA 124 nC @ 10 V ±20V 11900 pF @ 50 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP070N08N3 G

IPP070N08N3 G

MOSFET N-CH 80V 80A TO220-3

Infineon Technologies
2,189 -

RFQ

IPP070N08N3 G

Технические

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 80 V 80A (Tc) 6V, 10V 7mOhm @ 73A, 10V 3.5V @ 73µA 56 nC @ 10 V ±20V 3840 pF @ 40 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
RTQ035N03HZGTR

RTQ035N03HZGTR

MOSFET N-CH 30V 3.5A TSMT6

Rohm Semiconductor
3,669 -

RFQ

RTQ035N03HZGTR

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 30 V 3.5A (Ta) 2.5V, 4.5V 54mOhm @ 3.5A, 4.5V 1.5V @ 1mA 6.4 nC @ 4.5 V ±12V 285 pF @ 10 V - 950mW (Ta) 150°C (TJ) Surface Mount
SQ3469EV-T1_GE3

SQ3469EV-T1_GE3

MOSFET P-CH 20V 8A 6TSOP

Vishay Siliconix
2,143 -

RFQ

SQ3469EV-T1_GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 8A (Tc) 4.5V, 10V 36mOhm @ 6.7A, 10V 2.5V @ 25µA 27 nC @ 10 V ±20V 1020 pF @ 10 V - 5W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQ3427EV-T1_BE3

SQ3427EV-T1_BE3

MOSFET P-CH 60V 5.3A 6TSOP

Vishay Siliconix
3,711 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 60 V 5.3A (Tc) 4.5V, 10V 95mOhm @ 4.5A, 10V 2.5V @ 250µA 22 nC @ 10 V ±20V 1000 pF @ 30 V - 5W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQ3493EV-T1_GE3

SQ3493EV-T1_GE3

MOSFET P-CH 20V 8A 6TSOP

Vishay Siliconix
2,122 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 8A (Tc) 2.5V, 4.5V 21mOhm @ 5A, 4.5V 1.4V @ 250µA 34 nC @ 4.5 V ±12V 3300 pF @ 10 V - 5W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMA291P

FDMA291P

MOSFET P-CH 20V 6.6A 6MICROFET

onsemi
3,481 -

RFQ

FDMA291P

Технические

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 6.6A (Ta) 1.8V, 4.5V 42mOhm @ 6.6A, 4.5V 1V @ 250µA 14 nC @ 4.5 V ±8V 1000 pF @ 10 V - 2.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SQ3426AEEV-T1_BE3

SQ3426AEEV-T1_BE3

MOSFET N-CH 60V 7A 6TSOP

Vishay Siliconix
3,035 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 7A (Tc) 4.5V, 10V 42mOhm @ 5A, 10V 2.5V @ 250µA 14 nC @ 10 V ±20V 1100 pF @ 30 V - 5W (Tc) -55°C ~ 175°C (TJ) Surface Mount
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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