Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIA477EDJ-T1-GE3

SIA477EDJ-T1-GE3

MOSFET P-CH 12V 12A PPAK SC70-6

Vishay Siliconix
2,220 -

RFQ

SIA477EDJ-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 12 V 12A (Tc) - 14mOhm @ 7A, 4.5V 1V @ 250µA 87 nC @ 8 V - 2970 pF @ 6 V - - -55°C ~ 150°C (TJ) Surface Mount
SI3407DV-T1-BE3

SI3407DV-T1-BE3

MOSFET P-CH 20V 7.5A/8A 6TSOP

Vishay Siliconix
3,505 -

RFQ

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 7.5A (Ta), 8A (Tc) 2.5V, 4.5V 24mOhm @ 7.5A, 4.5V 1.5V @ 250µA 63 nC @ 10 V ±12V 1670 pF @ 10 V - 2W (Ta), 4.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI2336DS-T1-BE3

SI2336DS-T1-BE3

MOSFET N-CH 30V 4.3A/5.2A SOT23

Vishay Siliconix
2,865 -

RFQ

SI2336DS-T1-BE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 4.3A (Ta), 5.2A (Tc) 1.8V, 4.5V 42mOhm @ 3.8A, 4.5V 1V @ 250µA 15 nC @ 8 V ±8V 560 pF @ 15 V - 1.25W (Ta), 1.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIRA14BDP-T1-GE3

SIRA14BDP-T1-GE3

MOSFET N-CH 30V 21A/64A PPAK SO8

Vishay Siliconix
3,809 -

RFQ

SIRA14BDP-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta), 64A (Tc) 4.5V, 10V 5.38mOhm @ 10A, 10V 2.2V @ 250µA 22 nC @ 10 V +20V, -16V 917 pF @ 15 V - 3.7W (Ta), 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RQ3E150BNTB

RQ3E150BNTB

MOSFET N-CH 30V 15A 8HSMT

Rohm Semiconductor
2,453 -

RFQ

RQ3E150BNTB

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta) 4.5V, 10V 5.3mOhm @ 15A, 10V 2.5V @ 1mA 45 nC @ 10 V ±20V 3000 pF @ 15 V - 2W (Ta) 150°C (TJ) Surface Mount
ZXMN6A07FQTA

ZXMN6A07FQTA

MOSFET N-CH 60V 1.2A SOT23

Diodes Incorporated
2,835 -

RFQ

ZXMN6A07FQTA

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 1.2A (Ta) 4.5V, 10V 250mOhm @ 1.8A, 10V 3V @ 250µA 3.2 nC @ 10 V ±20V 166 pF @ 40 V - 625mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIA811ADJ-T1-GE3

SIA811ADJ-T1-GE3

MOSFET P-CH 20V 4.5A PPAK SC70-6

Vishay Siliconix
2,818 -

RFQ

SIA811ADJ-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) LITTLE FOOT® Active P-Channel MOSFET (Metal Oxide) 20 V 4.5A (Tc) 1.8V, 4.5V 116mOhm @ 2.8A, 4.5V 1V @ 250µA 13 nC @ 8 V ±8V 345 pF @ 10 V Schottky Diode (Isolated) 1.8W (Ta), 6.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DMN62D0UT-7

DMN62D0UT-7

MOSFET N-CH 60V 0.32A SOT523

Diodes Incorporated
3,586 -

RFQ

DMN62D0UT-7

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 320mA (Ta) 1.8V, 2.5V, 4.5V 2Ohm @ 50mA, 4.5V 1V @ 250A 0.5 nC @ 4.5 V ±20V 32 pF @ 30 V - 230mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPI075N15N3GHKSA1

IPI075N15N3GHKSA1

MOSFET N-CH 150V 100A TO262-3

Infineon Technologies
2,724 -

RFQ

IPI075N15N3GHKSA1

Технические

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 150 V 100A (Tc) 8V, 10V 7.5mOhm @ 100A, 10V 4V @ 270µA 93 nC @ 10 V ±20V 5470 pF @ 75 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI08CN10N G

IPI08CN10N G

MOSFET N-CH 100V 95A TO262-3

Infineon Technologies
3,909 -

RFQ

IPI08CN10N G

Технические

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 95A (Tc) 10V 8.5mOhm @ 95A, 10V 4V @ 130µA 100 nC @ 10 V ±20V 6660 pF @ 50 V - 167W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI08CNE8N G

IPI08CNE8N G

MOSFET N-CH 85V 95A TO262-3

Infineon Technologies
3,373 -

RFQ

IPI08CNE8N G

Технические

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 85 V 95A (Tc) 10V 6.4mOhm @ 95A, 10V 4V @ 130µA 99 nC @ 10 V ±20V 6690 pF @ 40 V - 167W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI100N04S303AKSA1

IPI100N04S303AKSA1

MOSFET N-CH 40V 100A TO262-3

Infineon Technologies
3,137 -

RFQ

IPI100N04S303AKSA1

Технические

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 2.8mOhm @ 80A, 10V 4V @ 150µA 145 nC @ 10 V ±20V 9600 pF @ 25 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI100N08N3GHKSA1

IPI100N08N3GHKSA1

MOSFET N-CH 80V 70A TO262-3

Infineon Technologies
3,565 -

RFQ

IPI100N08N3GHKSA1

Технические

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 80 V 70A (Tc) 6V, 10V 10mOhm @ 46A, 10V 3.5V @ 46µA 35 nC @ 10 V ±20V 2410 pF @ 40 V - 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI100N08S207AKSA1

IPI100N08S207AKSA1

MOSFET N-CH 75V 100A TO262-3

Infineon Technologies
2,413 -

RFQ

IPI100N08S207AKSA1

Технические

Tube OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 75 V 100A (Tc) 10V 7.1mOhm @ 80A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 4700 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI100N10S305AKSA1

IPI100N10S305AKSA1

MOSFET N-CH 100V 100A TO262-3

Infineon Technologies
20,500 -

RFQ

IPI100N10S305AKSA1

Технические

Bulk,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 10V 5.1mOhm @ 100A, 10V 4V @ 240µA 176 nC @ 10 V ±20V 11570 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI100P03P3L-04

IPI100P03P3L-04

MOSFET P-CH 30V 100A TO262-3

Infineon Technologies
3,373 -

RFQ

IPI100P03P3L-04

Технические

Tube OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 4.5V, 10V 4.3mOhm @ 80A, 10V 2.1V @ 475µA 200 nC @ 10 V +5V, -16V 9300 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
PMZB550UNEYL

PMZB550UNEYL

MOSFET N-CH 30V 590MA DFN1006B-3

Nexperia USA Inc.
3,473 -

RFQ

PMZB550UNEYL

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 590mA (Ta) 1.5V, 4.5V 670mOhm @ 590mA, 4.5V 950mV @ 250µA 1.1 nC @ 4.5 V ±8V 30.3 pF @ 15 V - 310mW (Ta), 1.67W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTLJF4156NTAG

NTLJF4156NTAG

MOSFET N-CH 30V 2.5A 6WDFN

onsemi
2,609 -

RFQ

NTLJF4156NTAG

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 2.5A (Tj) 1.5V, 4.5V 70mOhm @ 2A, 4.5V 1V @ 250µA 6.5 nC @ 4.5 V ±8V 427 pF @ 15 V Schottky Diode (Isolated) 710mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFH3707TRPBF

IRFH3707TRPBF

MOSFET N-CH 30V 12A/29A 8PQFN

Infineon Technologies
2,625 -

RFQ

IRFH3707TRPBF

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta), 29A (Tc) 4.5V, 10V 12.4mOhm @ 12A, 10V 2.35V @ 25µA 8.1 nC @ 4.5 V ±20V 755 pF @ 15 V - 2.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
RQ3E160ADTB

RQ3E160ADTB

MOSFET N-CH 30V 16A 8HSMT

Rohm Semiconductor
2,356 -

RFQ

RQ3E160ADTB

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 16A (Ta) 4.5V, 10V 4.5mOhm @ 16A, 10V 2.5V @ 1mA 51 nC @ 10 V ±20V 2550 pF @ 15 V - 2W (Ta) 150°C (TJ) Surface Mount
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