Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
STF5NK52ZD

STF5NK52ZD

MOSFET N-CH 520V 4.4A TO220FP

STMicroelectronics
3,364 -

RFQ

STF5NK52ZD

Технические

Tube SuperMESH™ Obsolete N-Channel MOSFET (Metal Oxide) 520 V 4.4A (Tc) 10V 1.5Ohm @ 2.2A, 10V 4.5V @ 50µA 16.9 nC @ 10 V ±30V 529 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
NVMJS1D5N04CLTWG

NVMJS1D5N04CLTWG

MOSFET N-CH 40V 38A/200A 8LFPAK

onsemi
2,495 -

RFQ

NVMJS1D5N04CLTWG

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 38A (Ta), 200A (Tc) 4.5V, 10V 1.4mOhm @ 50A, 10V 2V @ 130µA 70 nC @ 10 V ±20V 4300 pF @ 20 V - 3.8W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IAUC120N04S6N009ATMA1

IAUC120N04S6N009ATMA1

MOSFET N-CH 40V 120A 8TDSON-33

Infineon Technologies
3,765 -

RFQ

IAUC120N04S6N009ATMA1

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 7V, 10V 0.9mOhm @ 60A, 10V 3.4V @ 90µA 115 nC @ 10 V ±20V 7360 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
CSD18510KTT

CSD18510KTT

MOSFET N-CH 40V 274A DDPAK

Texas Instruments
3,339 -

RFQ

CSD18510KTT

Технические

Tape & Reel (TR),Cut Tape (CT) NexFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 274A (Tc) 4.5V, 10V 1.7mOhm @ 100A, 10V 2.3V @ 250µA 153 nC @ 10 V ±20V 11400 pF @ 20 V - 250W (Ta) -55°C ~ 175°C (TJ) Surface Mount
STU3N62K3

STU3N62K3

MOSFET N-CH 620V 2.7A IPAK

STMicroelectronics
3,712 -

RFQ

STU3N62K3

Технические

Tube SuperMESH3™ Active N-Channel MOSFET (Metal Oxide) 620 V 2.7A (Tc) 10V 2.5Ohm @ 1.4A, 10V 4.5V @ 50µA 13 nC @ 10 V ±30V 385 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
IRFU310PBF

IRFU310PBF

MOSFET N-CH 400V 1.7A TO251AA

Vishay Siliconix
3,400 -

RFQ

IRFU310PBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 1.7A (Tc) 10V 3.6Ohm @ 1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 170 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF8NM60ND

STF8NM60ND

MOSFET N-CH 600V 7A TO220FP

STMicroelectronics
3,256 -

RFQ

STF8NM60ND

Технические

Tube FDmesh™ II Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 700mOhm @ 3.5A, 10V 5V @ 250µA 22 nC @ 10 V ±30V 560 pF @ 50 V - 25W (Tc) 150°C (TJ) Through Hole
STU85N3LH5

STU85N3LH5

MOSFET N-CH 30V 80A IPAK

STMicroelectronics
2,185 -

RFQ

STU85N3LH5

Технические

Tube STripFET™ V Obsolete N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 5V, 10V 5.4mOhm @ 40A, 10V 2.5V @ 250µA 14 nC @ 5 V ±22V 1850 pF @ 25 V - 70W (Tc) 175°C (TJ) Through Hole
STU8NM60ND

STU8NM60ND

MOSFET N-CH 600V 7A IPAK

STMicroelectronics
3,160 -

RFQ

STU8NM60ND

Технические

Tube FDmesh™ II Obsolete N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 700mOhm @ 3.5A, 10V 5V @ 250µA 22 nC @ 10 V ±30V 560 pF @ 50 V - 70W (Tc) 150°C (TJ) Through Hole
IRFD224PBF

IRFD224PBF

MOSFET N-CH 250V 630MA 4DIP

Vishay Siliconix
2,985 -

RFQ

IRFD224PBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 250 V 630mA (Ta) 10V 1.1Ohm @ 380mA, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
IRFS7537TRLPBF

IRFS7537TRLPBF

MOSFET N-CH 60V 173A D2PAK

Infineon Technologies
2,724 -

RFQ

IRFS7537TRLPBF

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 173A (Tc) 6V, 10V 3.3mOhm @ 100A, 10V 3.7V @ 150µA 210 nC @ 10 V ±20V 7020 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STB155N3LH6

STB155N3LH6

MOSFET N-CH 30V 80A D2PAK

STMicroelectronics
2,934 -

RFQ

STB155N3LH6

Технические

Tape & Reel (TR),Cut Tape (CT) DeepGATE™, STripFET™ VI Active N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 5V, 10V 3mOhm @ 40A, 10V 2.5V @ 250µA 80 nC @ 5 V ±20V 3800 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PHP18NQ10T,127

PHP18NQ10T,127

MOSFET N-CH 100V 18A TO220AB

Nexperia USA Inc.
2,666 -

RFQ

PHP18NQ10T,127

Технические

Tube TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 18A (Tc) 10V 90mOhm @ 9A, 10V 4V @ 1mA 21 nC @ 10 V ±20V 633 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF8707GPBF

IRF8707GPBF

MOSFET N-CH 30V 11A 8SO

Infineon Technologies
3,244 -

RFQ

IRF8707GPBF

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 11.9mOhm @ 11A, 10V 2.35V @ 25µA 9.3 nC @ 4.5 V ±20V 760 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFU320PBF

IRFU320PBF

MOSFET N-CH 400V 3.1A TO251AA

Vishay Siliconix
1,499 -

RFQ

IRFU320PBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 3.1A (Tc) 10V 1.8Ohm @ 1.9A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 350 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF8302MTRPBF

IRF8302MTRPBF

MOSFET N-CH 30V 31A DIRECTFET

Infineon Technologies
3,157 -

RFQ

IRF8302MTRPBF

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 31A (Ta), 190A (Tc) 4.5V, 10V 1.8mOhm @ 31A, 10V 2.35V @ 150µA 53 nC @ 4.5 V ±20V 6030 pF @ 15 V - 2.8W (Ta), 104W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF8714GPBF

IRF8714GPBF

MOSFET N-CH 30V 14A 8SO

Infineon Technologies
2,740 -

RFQ

IRF8714GPBF

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 4.5V, 10V 8.7mOhm @ 14A, 10V 2.35V @ 25µA 12 nC @ 4.5 V ±20V 1020 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF840ASTRLPBF

IRF840ASTRLPBF

MOSFET N-CH 500V 8A D2PAK

Vishay Siliconix
3,785 -

RFQ

IRF840ASTRLPBF

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1018 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF8721GPBF

IRF8721GPBF

MOSFET N-CH 30V 14A 8SO

Infineon Technologies
3,970 -

RFQ

IRF8721GPBF

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 4.5V, 10V 8.5mOhm @ 14A, 10V 2.35V @ 25µA 12 nC @ 4.5 V ±20V 1040 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPL60R365P7AUMA1

IPL60R365P7AUMA1

MOSFET N-CH 600V 10A 4VSON

Infineon Technologies
31,553 -

RFQ

IPL60R365P7AUMA1

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 365mOhm @ 2.7A, 10V 4V @ 140µA 13 nC @ 10 V ±20V 555 pF @ 400 V - 46W (Tc) -40°C ~ 150°C (TJ) Surface Mount
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20,000.000 Продукты
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1800+ производители
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15,000+ Складские запасы
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