| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
2SJ656MOSFET P-CH 100V 18A TO220ML onsemi |
2,537 | - |
RFQ |
Технические |
Bulk | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 18A (Ta) | 4V, 10V | 75.5mOhm @ 9A, 10V | - | 74 nC @ 10 V | ±20V | 4200 pF @ 20 V | - | 2W (Ta), 30W (Tc) | 150°C (TJ) | Through Hole |
|
2SK4124MOSFET N-CH 500V 20A TO3PB onsemi |
3,440 | - |
RFQ |
Технические |
Tray | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 20A (Ta) | 10V | 430mOhm @ 8A, 10V | - | 46.6 nC @ 10 V | ±30V | 1200 pF @ 30 V | - | 2.5W (Ta), 170W (Tc) | 150°C (TJ) | Through Hole |
|
2SK4125MOSFET N-CH 600V 17A TO3PB onsemi |
497 | - |
RFQ |
Технические |
Tray,Tray | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 17A (Ta) | 10V | 610mOhm @ 7A, 10V | - | 46 nC @ 10 V | ±30V | 1200 pF @ 30 V | - | 2.5W (Ta), 170W (Tc) | 150°C (TJ) | Through Hole |
|
ATP102-TL-HMOSFET P-CH 30V 40A ATPAK onsemi |
3,591 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 40A (Ta) | 4.5V, 10V | 18.5mOhm @ 20A, 10V | - | 34 nC @ 10 V | ±20V | 1490 pF @ 10 V | - | 40W (Tc) | 150°C (TJ) | Surface Mount |
|
ATP104-TL-HMOSFET P-CH 30V 75A ATPAK onsemi |
3,633 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 75A (Ta) | 4.5V, 10V | 8.4mOhm @ 38A, 10V | - | 76 nC @ 10 V | ±20V | 3950 pF @ 10 V | - | 60W (Tc) | 150°C (TJ) | Surface Mount |
|
ATP106-TL-HMOSFET P-CH 40V 30A ATPAK onsemi |
3,392 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT),Bulk | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 30A (Ta) | 4.5V, 10V | 25mOhm @ 15A, 10V | - | 29 nC @ 10 V | ±20V | 1380 pF @ 20 V | - | 40W (Tc) | 150°C (TJ) | Surface Mount |
|
ATP108-TL-HMOSFET P-CH 40V 70A ATPAK onsemi |
2,060 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT),Bulk | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 70A (Ta) | 4.5V, 10V | 10.4mOhm @ 35A, 10V | - | 79.5 nC @ 10 V | ±20V | 3850 pF @ 20 V | - | 60W (Tc) | 150°C (TJ) | Surface Mount |
|
ATP203-TL-HMOSFET N-CH 30V 75A ATPAK onsemi |
8,856 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT),Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 75A (Ta) | 4.5V, 10V | 8.2mOhm @ 38A, 10V | - | 44 nC @ 10 V | ±20V | 2750 pF @ 10 V | - | 50W (Tc) | 150°C (TJ) | Surface Mount |
|
STB100N10F7MOSFET N-CH 100V 80A D2PAK STMicroelectronics |
2,733 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | DeepGATE™, STripFET™ VII | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 80A (Tc) | 10V | 8mOhm @ 40A, 10V | 4.5V @ 250µA | 61 nC @ 10 V | ±20V | 4369 pF @ 50 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
SQJQ404E-T1_GE3MOSFET N-CH 40V 200A PPAK 8 X 8 Vishay Siliconix |
3,705 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 200A (Tc) | 10V | 1.72mOhm @ 20A, 10V | 3.5V @ 250µA | 270 nC @ 10 V | ±20V | 16480 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
SPU02N60C3BKMA1MOSFET N-CH 650V 1.8A TO251-3 Infineon Technologies |
3,563 | - |
RFQ |
Технические |
Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 1.8A (Tc) | 10V | 3Ohm @ 1.1A, 10V | 3.9V @ 80µA | 12.5 nC @ 10 V | ±20V | 200 pF @ 25 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IPA70R450P7SXKSA1MOSFET N-CH 700V 10A TO220 Infineon Technologies |
3,926 | - |
RFQ |
Технические |
Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 10A (Tc) | 10V | 450mOhm @ 2.3A, 10V | 3.5V @ 120µA | 13.1 nC @ 400 V | ±16V | 424 pF @ 400 V | - | 22.7W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
|
IRFUC20PBFMOSFET N-CH 600V 2A TO251AA Vishay Siliconix |
3,641 | - |
RFQ |
Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 2A (Tc) | 10V | 4.4Ohm @ 1.2A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IRF710SPBFMOSFET N-CH 400V 2A D2PAK Vishay Siliconix |
2,327 | - |
RFQ |
Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 2A (Tc) | 10V | 3.6Ohm @ 1.2A, 10V | 4V @ 250µA | 17 nC @ 10 V | ±20V | 170 pF @ 25 V | - | 3.1W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SIHP6N40D-E3MOSFET N-CH 400V 6A TO220AB Vishay Siliconix |
2,518 | - |
RFQ |
Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 6A (Tc) | 10V | 1Ohm @ 3A, 10V | 5V @ 250µA | 18 nC @ 10 V | ±30V | 311 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
STF5N60M2MOSFET N-CH 600V 3.7A TO220FP STMicroelectronics |
1,984 | - |
RFQ |
Технические |
Tube | MDmesh™ II Plus | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.7A (Tc) | 10V | 1.4Ohm @ 1.85A, 10V | 4V @ 250µA | 4.5 nC @ 10 V | ±25V | 165 pF @ 100 V | - | 20W (Tc) | 150°C (TJ) | Through Hole |
|
SIHD6N65E-GE3MOSFET N-CH 650V 7A DPAK Vishay Siliconix |
3,610 | - |
RFQ |
Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 7A (Tc) | 10V | 600mOhm @ 3A, 10V | 4V @ 250µA | 48 nC @ 10 V | ±30V | 820 pF @ 100 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
NVMFS6H818NWFT1GMOSFET N-CH 80V 20A/123A 5DFN onsemi |
2,494 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT),Bulk | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 20A (Ta), 123A (Tc) | 10V | 3.7mOhm @ 20A, 10V | 4V @ 190µA | 46 nC @ 10 V | ±20V | 3100 pF @ 40 V | - | 3.8W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
STP55NF06MOSFET N-CH 60V 50A TO220AB STMicroelectronics |
3,641 | - |
RFQ |
Технические |
Tube | STripFET™ II | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 10V | 18mOhm @ 27.5A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
STU3N80K5MOSFET N-CH 800V 2.5A IPAK STMicroelectronics |
3,641 | - |
RFQ |
Технические |
Tube | SuperMESH5™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 2.5A (Tc) | 10V | 3.5Ohm @ 1A, 10V | 5V @ 100µA | 9.5 nC @ 10 V | ±30V | 130 pF @ 100 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |