Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AOB160A60L

AOB160A60L

MOSFET N-CH 600V 24A TO263

Alpha & Omega Semiconductor Inc.
3,218 -

RFQ

AOB160A60L

Технические

Tape & Reel (TR),Cut Tape (CT) aMOS5™ Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 160mOhm @ 12A, 10V 3.6V @ 250µA 46 nC @ 10 V ±20V 2340 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
LP0701LG-G

LP0701LG-G

MOSFET P-CH 16.5V 700MA 8SOIC

Microchip Technology
3,379 -

RFQ

LP0701LG-G

Технические

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 16.5 V 700mA (Tj) 2V, 5V 1.5Ohm @ 300mA, 5V 1V @ 1.1mA - ±10V 250 pF @ 15 V - 1.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIDR610DP-T1-GE3

SIDR610DP-T1-GE3

MOSFET N-CH 200V 8.9A/39.6A PPAK

Vishay Siliconix
3,244 -

RFQ

SIDR610DP-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 200 V 8.9A (Ta), 39.6A (Tc) 7.5V, 10V 31.9mOhm @ 10A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 1380 pF @ 100 V - 6.25W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR9024PBF

IRFR9024PBF

MOSFET P-CH 60V 8.8A DPAK

Vishay Siliconix
1,800 -

RFQ

IRFR9024PBF

Технические

Tube - Active P-Channel MOSFET (Metal Oxide) 60 V 8.8A (Tc) 10V 280mOhm @ 5.3A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 570 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STP6N62K3

STP6N62K3

MOSFET N-CH 620V 5.5A TO220AB

STMicroelectronics
3,007 -

RFQ

STP6N62K3

Технические

Tube SuperMESH3™ Active N-Channel MOSFET (Metal Oxide) 620 V 5.5A (Tc) 10V 1.2Ohm @ 2.8A, 10V 4.5V @ 50µA 34 nC @ 10 V ±30V 875 pF @ 50 V - 90W (Tc) 150°C (TJ) Through Hole
SIHD9N60E-GE3

SIHD9N60E-GE3

MOSFET N-CH 600V 9A DPAK

Vishay Siliconix
2,082 -

RFQ

SIHD9N60E-GE3

Технические

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 368mOhm @ 4.5A, 10V 4.5V @ 250µA 52 nC @ 10 V ±30V 778 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF840ASTRRPBF

IRF840ASTRRPBF

MOSFET N-CH 500V 8A D2PAK

Vishay Siliconix
2,678 -

RFQ

IRF840ASTRRPBF

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1018 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STB26N60M2

STB26N60M2

MOSFET N-CHANNEL 600V 20A D2PAK

STMicroelectronics
3,142 -

RFQ

STB26N60M2

Технические

Tape & Reel (TR),Cut Tape (CT) MDmesh™ M2 Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 165mOhm @ 10A, 10V 4V @ 250µA 34 nC @ 10 V ±25V 1360 pF @ 100 V - 169W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIE810DF-T1-GE3

SIE810DF-T1-GE3

MOSFET N-CH 20V 60A 10POLARPAK

Vishay Siliconix
3,679 -

RFQ

SIE810DF-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 60A (Tc) 2.5V, 10V 1.4mOhm @ 25A, 10V 2V @ 250µA 300 nC @ 10 V ±12V 13000 pF @ 10 V - 5.2W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMS8050

FDMS8050

MOSFET N-CHANNEL 30V 55A 8PQFN

onsemi
2,968 -

RFQ

FDMS8050

Технические

Tape & Reel (TR),Cut Tape (CT) - Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 55A (Tc) 4.5V, 10V 0.65mOhm @ 55A, 10V 3V @ 750µA 285 nC @ 10 V ±20V 22610 pF @ 15 V - 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STP45N10F7

STP45N10F7

MOSFET N-CH 100V 45A TO220

STMicroelectronics
3,804 -

RFQ

STP45N10F7

Технические

Tube DeepGATE™, STripFET™ VII Active N-Channel MOSFET (Metal Oxide) 100 V 45A (Tc) 10V 18mOhm @ 22.5A, 10V 4.5V @ 250µA 25 nC @ 10 V ±20V 1640 pF @ 50 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
PSMN016-100PS,127

PSMN016-100PS,127

MOSFET N-CH 100V 57A TO220AB

Nexperia USA Inc.
2,117 -

RFQ

PSMN016-100PS,127

Технические

Bulk,Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 57A (Tj) 10V 16mOhm @ 15A, 10V 4V @ 1mA 49 nC @ 10 V ±20V 2404 pF @ 50 V - 148W (Tc) -55°C ~ 175°C (TJ) Through Hole
STF13N60DM2

STF13N60DM2

MOSFET N-CH 600V 11A TO220FP

STMicroelectronics
3,171 -

RFQ

STF13N60DM2

Технические

Tube MDmesh™ DM2 Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 365mOhm @ 5.5A, 10V 5V @ 250µA 19 nC @ 10 V ±25V 730 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOT360A70L

AOT360A70L

MOSFET N-CH 700V 12A TO220

Alpha & Omega Semiconductor Inc.
3,505 -

RFQ

Tube aMOS5™ Active N-Channel MOSFET (Metal Oxide) 700 V 12A (Tc) 10V 360mOhm @ 6A, 10V 4V @ 250µA 22.5 nC @ 10 V ±20V 1360 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA60R600P6XKSA1

IPA60R600P6XKSA1

MOSFET N-CH 600V 4.9A TO220-FP

Infineon Technologies
2,655 -

RFQ

IPA60R600P6XKSA1

Технические

Tube CoolMOS™ P6 Active N-Channel MOSFET (Metal Oxide) 600 V 4.9A (Tc) 10V 600mOhm @ 2.4A, 10V 4.5V @ 200µA 12 nC @ 10 V ±20V 557 pF @ 100 V - 28W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTLJS4149PTBG

NTLJS4149PTBG

MOSFET P-CH 30V 2.7A 6WDFN

onsemi
308,000 -

RFQ

NTLJS4149PTBG

Технические

Tape & Reel (TR),Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 2.7A (Ta) 2.5V, 4.5V 62mOhm @ 4.5A, 4.5V 1V @ 250µA 15 nC @ 4.5 V ±12V 960 pF @ 15 V - 700mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
NTLUS3192PZTBG

NTLUS3192PZTBG

MOSFET P-CH 20V 2.2A 6UDFN

onsemi
35,000 -

RFQ

NTLUS3192PZTBG

Технические

Tape & Reel (TR),Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 2.2A (Ta) 1.5V, 4.5V 86mOhm @ 3A, 4.5V 1V @ 250µA 8.5 nC @ 4.5 V ±8V 450 pF @ 10 V - 600mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
NTLUS4195PZTBG

NTLUS4195PZTBG

MOSFET P-CH 30V 2A 6UDFN

onsemi
21,000 -

RFQ

NTLUS4195PZTBG

Технические

Tape & Reel (TR),Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 2A (Ta) 4.5V, 10V 90mOhm @ 3A, 10V 3V @ 250µA 5 nC @ 4.5 V ±20V 250 pF @ 15 V - 600mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
NTD4863NA-35G

NTD4863NA-35G

MOSFET N-CH 25V 9.2A/49A IPAK

onsemi
3,345 -

RFQ

NTD4863NA-35G

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 25 V 9.2A (Ta), 49A (Tc) - 9.3mOhm @ 30A, 10V 2.5V @ 250µA 17.8 nC @ 10 V - 990 pF @ 12 V - 1.27W (Ta), 36.6W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD4906N-35G

NTD4906N-35G

MOSFET N-CH 30V 10.3A/54A IPAK

onsemi
676,661 -

RFQ

NTD4906N-35G

Технические

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 10.3A (Ta), 54A (Tc) 4.5V, 10V 5.5mOhm @ 30A, 10V 2.2V @ 250µA 24 nC @ 10 V ±20V 1932 pF @ 15 V - 1.38W (Ta), 37.5W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1800+ производители
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15,000+ Складские запасы
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