Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
STLD125N4F6AG

STLD125N4F6AG

MOSFET N-CH 40V 120A POWERFLAT

STMicroelectronics
2,273 -

RFQ

STLD125N4F6AG

Технические

Tape & Reel (TR),Cut Tape (CT) STripFET™ F6 Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 6.5V, 10V 3mOhm @ 75A, 10V 4V @ 1mA 91 nC @ 10 V ±20V 5600 pF @ 10 V - 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHP22N60S-E3

SIHP22N60S-E3

MOSFET N-CH 600V 22A TO220AB

Vishay Siliconix
2,618 -

RFQ

SIHP22N60S-E3

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) - 190mOhm @ 11A, 10V 4V @ 250µA 110 nC @ 10 V - 2810 pF @ 25 V - - - Through Hole
SIHB12N60E-GE3

SIHB12N60E-GE3

MOSFET N-CH 600V 12A D2PAK

Vishay Siliconix
3,733 -

RFQ

SIHB12N60E-GE3

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 58 nC @ 10 V ±30V 937 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHG22N60S-E3

SIHG22N60S-E3

MOSFET N-CH 600V 22A TO247AC

Vishay Siliconix
2,634 -

RFQ

SIHG22N60S-E3

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) - 190mOhm @ 11A, 10V 4V @ 250µA 110 nC @ 10 V - 5620 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP11N65M5

STP11N65M5

MOSFET N-CH 650V 9A TO220

STMicroelectronics
3,847 -

RFQ

STP11N65M5

Технические

Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 9A (Tc) 10V 480mOhm @ 4.5A, 10V 5V @ 250µA 17 nC @ 10 V ±25V 644 pF @ 100 V - 85W (Tc) 150°C (TJ) Through Hole
SIHP7N60E-GE3

SIHP7N60E-GE3

MOSFET N-CH 600V 7A TO220AB

Vishay Siliconix
2,037 -

RFQ

SIHP7N60E-GE3

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 600mOhm @ 3.5A, 10V 4V @ 250µA 40 nC @ 10 V ±30V 680 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSS83PL6327HTSA1

BSS83PL6327HTSA1

MOSFET P-CH 60V 330MA SOT23-3

Infineon Technologies
3,315 -

RFQ

BSS83PL6327HTSA1

Технические

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Obsolete P-Channel MOSFET (Metal Oxide) 60 V 330mA (Ta) 4.5V, 10V 2Ohm @ 330mA, 10V 2V @ 80µA 3.57 nC @ 10 V ±20V 78 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPP086N10N3GXKSA1

IPP086N10N3GXKSA1

MOSFET N-CH 100V 80A TO220-3

Infineon Technologies
2,643 -

RFQ

IPP086N10N3GXKSA1

Технические

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 6V, 10V 8.6mOhm @ 73A, 10V 3.5V @ 75µA 55 nC @ 10 V ±20V 3980 pF @ 50 V - 125W (Tc) -55°C ~ 175°C (TJ) Through Hole
CSD16407Q5C

CSD16407Q5C

MOSFET N-CH 25V 31A/100A 8VSON

Texas Instruments
2,673 -

RFQ

CSD16407Q5C

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk NexFET™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 31A (Ta), 100A (Tc) 4.5V, 10V 2.4mOhm @ 25A, 10V 1.9V @ 250µA 18 nC @ 4.5 V +16V, -12V 2660 pF @ 12.5 V - 3.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
2N7002K,215

2N7002K,215

MOSFET N-CH 60V 340MA TO236AB

NXP USA Inc.
3,421 -

RFQ

2N7002K,215

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 340mA (Ta) 4.5V, 10V 3.9Ohm @ 500mA, 10V 2V @ 1mA - ±15V 40 pF @ 10 V - 830mW (Ta) -65°C ~ 150°C (TJ) Surface Mount
STB5NK50Z-1

STB5NK50Z-1

MOSFET N-CH 500V 4.4A I2PAK

STMicroelectronics
3,087 -

RFQ

STB5NK50Z-1

Технические

Tube SuperMESH™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 4.4A (Tc) 10V 1.5Ohm @ 2.2A, 10V 4.5V @ 50µA 28 nC @ 10 V ±30V 535 pF @ 25 V - 70W (Tc) -55°C ~ 150°C (TJ) Through Hole
STB70N10F4

STB70N10F4

MOSFET N-CH 100V 65A D2PAK

STMicroelectronics
3,170 -

RFQ

STB70N10F4

Технические

Tape & Reel (TR) DeepGATE™, STripFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 65A (Tc) 10V 19.5mOhm @ 30A, 10V 4V @ 250µA 85 nC @ 10 V ±20V 5800 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQM200N04-1M7L_GE3

SQM200N04-1M7L_GE3

MOSFET N-CH 40V 200A TO263-7

Vishay Siliconix
3,104 -

RFQ

SQM200N04-1M7L_GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 200A (Tc) 4.5V, 10V 1.7mOhm @ 30A, 10V 2.5V @ 250µA 291 nC @ 10 V ±20V 11168 pF @ 20 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK5A60W,S4VX

TK5A60W,S4VX

MOSFET N-CH 600V 5.4A TO220SIS

Toshiba Semiconductor and Storage
3,589 -

RFQ

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 5.4A (Ta) 10V 900mOhm @ 2.7A, 10V 3.7V @ 270µA 10.5 nC @ 10 V ±30V 380 pF @ 300 V Super Junction 30W (Tc) 150°C (TJ) Through Hole
R6024KNJTL

R6024KNJTL

MOSFET N-CHANNEL 600V 24A LPTS

Rohm Semiconductor
2,635 -

RFQ

R6024KNJTL

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 165mOhm @ 11.3A, 10V 5V @ 1mA 45 nC @ 10 V ±20V 2000 pF @ 25 V - 245W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STF12NM50ND

STF12NM50ND

MOSFET N-CH 500V 11A TO220FP

STMicroelectronics
2,590 -

RFQ

STF12NM50ND

Технические

Tube FDmesh™ II Obsolete N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 380mOhm @ 5.5A, 10V 5V @ 250µA 30 nC @ 10 V ±25V 850 pF @ 50 V - 25W (Tc) 150°C (TJ) Through Hole
STF5N52U

STF5N52U

MOSFET N-CH 525V 4.4A TO220FP

STMicroelectronics
3,438 -

RFQ

STF5N52U

Технические

Tube UltraFASTmesh™ Obsolete N-Channel MOSFET (Metal Oxide) 525 V 4.4A (Tc) 10V 1.5Ohm @ 2.2A, 10V 4.5V @ 50µA 16.9 nC @ 10 V ±30V 529 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
STI18NM60N

STI18NM60N

MOSFET N-CH 600V 13A I2PAK

STMicroelectronics
3,421 -

RFQ

STI18NM60N

Технические

Tube MDmesh™ II Obsolete N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 285mOhm @ 6.5A, 10V 4V @ 250µA 35 nC @ 10 V ±25V 1000 pF @ 50 V - 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
STI200N6F3

STI200N6F3

MOSFET N-CH 60V 120A I2PAK

STMicroelectronics
2,792 -

RFQ

STI200N6F3

Технические

Tube STripFET™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 3.8mOhm @ 60A, 10V 4V @ 250µA 101 nC @ 10 V ±20V 6265 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
STI30NM60N

STI30NM60N

MOSFET N-CH 600V 25A I2PAK

STMicroelectronics
3,696 -

RFQ

STI30NM60N

Технические

Tube MDmesh™ II Obsolete N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 130mOhm @ 12.5A, 10V 4V @ 250µA 91 nC @ 10 V ±30V 2700 pF @ 50 V - 190W (Tc) 150°C (TJ) Through Hole
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