Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NTTFS4840NTWG

NTTFS4840NTWG

MOSFET N-CH 30V 4.6A/26A 8WDFN

onsemi
3,931 -

RFQ

NTTFS4840NTWG

Технические

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 4.6A (Ta), 26A (Tc) 4.5V, 11.5V 24mOhm @ 20A, 10V 3V @ 250µA 10.8 nC @ 10 V ±20V 580 pF @ 15 V - 840mW (Ta), 27.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NVMS10P02R2G

NVMS10P02R2G

MOSFET P-CH 20V 10A 8SOIC

onsemi
3,779 -

RFQ

Tape & Reel (TR),Bulk Automotive, AEC-Q101 Obsolete P-Channel MOSFET (Metal Oxide) 20 V 10A (Ta) - - - - - - - - - Surface Mount
TK13A65U(STA4,Q,M)

TK13A65U(STA4,Q,M)

MOSFET N-CH 650V 13A TO220SIS

Toshiba Semiconductor and Storage
3,101 -

RFQ

TK13A65U(STA4,Q,M)

Технические

Tube DTMOSII Obsolete N-Channel MOSFET (Metal Oxide) 650 V 13A (Ta) 10V 380mOhm @ 6.5A, 10V 5V @ 1mA 17 nC @ 10 V ±30V 950 pF @ 10 V - 40W (Tc) 150°C (TJ) Through Hole
TK4A60D(STA4,Q,M)

TK4A60D(STA4,Q,M)

MOSFET N-CH 600V 4A TO220SIS

Toshiba Semiconductor and Storage
2,167 -

RFQ

TK4A60D(STA4,Q,M)

Технические

Tube π-MOSVII Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4A (Ta) 10V 1.7Ohm @ 2A, 10V 4.4V @ 1mA 12 nC @ 10 V ±30V 600 pF @ 25 V - 35W (Tc) 150°C (TJ) Through Hole
SSM3K106TU(TE85L)

SSM3K106TU(TE85L)

MOSFET N-CH 20V 1.2A UFM

Toshiba Semiconductor and Storage
3,532 -

RFQ

SSM3K106TU(TE85L)

Технические

Tape & Reel (TR),Cut Tape (CT) π-MOSVI Obsolete N-Channel MOSFET (Metal Oxide) 20 V 1.2A (Ta) 4V, 10V 310mOhm @ 600mA, 10V 2.3V @ 100µA - ±20V 36 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
SSM3K15CT(TPL3)

SSM3K15CT(TPL3)

MOSFET N-CH 30V 100MA CST3

Toshiba Semiconductor and Storage
3,161 -

RFQ

SSM3K15CT(TPL3)

Технические

Tape & Reel (TR),Cut Tape (CT) π-MOSVI Obsolete N-Channel MOSFET (Metal Oxide) 30 V 100mA (Ta) 2.5V, 4V 4Ohm @ 10mA, 4V 1.5V @ 100µA - ±20V 7.8 pF @ 3 V - 100mW (Ta) 150°C (TJ) Surface Mount
SSM3K15FS,LF

SSM3K15FS,LF

MOSFET N-CH 30V 100MA SSM

Toshiba Semiconductor and Storage
3,207 -

RFQ

SSM3K15FS,LF

Технические

Tape & Reel (TR),Cut Tape (CT) π-MOSVI Obsolete N-Channel MOSFET (Metal Oxide) 30 V 100mA (Ta) 2.5V, 4V 4Ohm @ 10mA, 4V 1.5V @ 100µA - ±20V 7.8 pF @ 3 V - 200mW (Ta) 150°C (TJ) Surface Mount
SSM3K303T(TE85L,F)

SSM3K303T(TE85L,F)

MOSFET N-CH 30V 2.9A TSM

Toshiba Semiconductor and Storage
2,554 -

RFQ

SSM3K303T(TE85L,F)

Технические

Tape & Reel (TR),Cut Tape (CT) π-MOSVII Obsolete N-Channel MOSFET (Metal Oxide) 30 V 2.9A (Ta) 4V, 10V 83mOhm @ 1.5A, 10V 2.6V @ 1mA 3.3 nC @ 4 V ±20V 180 pF @ 10 V - 700mW (Ta) 150°C (TJ) Surface Mount
SSM3K35MFV(TPL3)

SSM3K35MFV(TPL3)

MOSFET N-CH 20V 180MA VESM

Toshiba Semiconductor and Storage
3,149 -

RFQ

SSM3K35MFV(TPL3)

Технические

Tape & Reel (TR),Cut Tape (CT) π-MOSVI Active N-Channel MOSFET (Metal Oxide) 20 V 180mA (Ta) 1.2V, 4V 3Ohm @ 50mA, 4V 1V @ 1mA - ±10V 9.5 pF @ 3 V - 150mW (Ta) 150°C (TJ) Surface Mount
SSM6J206FE(TE85L,F

SSM6J206FE(TE85L,F

MOSFET P-CH 20V 2A ES6

Toshiba Semiconductor and Storage
2,084 -

RFQ

SSM6J206FE(TE85L,F

Технические

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 2A (Ta) 1.8V, 4V 130mOhm @ 1A, 4V 1V @ 1mA - ±8V 335 pF @ 10 V - 500mW (Ta) 150°C (TJ) Surface Mount
TK50P03M1(T6RSS-Q)

TK50P03M1(T6RSS-Q)

MOSFET N-CH 30V 50A DP

Toshiba Semiconductor and Storage
2,973 -

RFQ

TK50P03M1(T6RSS-Q)

Технические

Tape & Reel (TR),Cut Tape (CT) U-MOSVI-H Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Ta) 4.5V, 10V 7.5mOhm @ 25A, 10V 2.3V @ 200µA 25.3 nC @ 10 V ±20V 1700 pF @ 10 V - 47W (Tc) 150°C (TJ) Surface Mount
TK50P04M1(T6RSS-Q)

TK50P04M1(T6RSS-Q)

MOSFET N-CH 40V 50A DP

Toshiba Semiconductor and Storage
2,613 -

RFQ

TK50P04M1(T6RSS-Q)

Технические

Tape & Reel (TR),Cut Tape (CT) U-MOSVI-H Obsolete N-Channel MOSFET (Metal Oxide) 40 V 50A (Ta) 4.5V, 10V 8.7mOhm @ 25A, 10V 2.3V @ 500µA 38 nC @ 10 V ±20V 2600 pF @ 10 V - 60W (Tc) 150°C (TJ) Surface Mount
TPCC8001-H(TE12LQM

TPCC8001-H(TE12LQM

MOSFET N-CH 30V 22A 8TSON

Toshiba Semiconductor and Storage
2,146 -

RFQ

TPCC8001-H(TE12LQM

Технические

Tape & Reel (TR),Cut Tape (CT) U-MOSV-H Obsolete N-Channel MOSFET (Metal Oxide) 30 V 22A (Ta) 4.5V, 10V 8.3mOhm @ 11A, 10V 2.5V @ 1mA 27 nC @ 10 V ±20V 2500 pF @ 10 V - 700mW (Ta), 30W (Tc) 150°C (TJ) Surface Mount
STL33N60DM6

STL33N60DM6

MOSFET N-CH 600V 21A PWRFLAT HV

STMicroelectronics
2,911 -

RFQ

STL33N60DM6

Технические

Tape & Reel (TR),Cut Tape (CT) MDmesh™ M6 Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 140mOhm @ 10.5A, 10V 4.75V @ 250µA 35 nC @ 10 V ±25V 1500 pF @ 100 V - 150W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STP200NF03

STP200NF03

MOSFET N-CH 30V 120A TO220AB

STMicroelectronics
2,910 -

RFQ

STP200NF03

Технические

Tube STripFET™ III Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 120A (Tc) 10V 3.6mOhm @ 60A, 10V 4V @ 250µA 140 nC @ 10 V ±20V 4950 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
STF24NM60N

STF24NM60N

MOSFET N-CH 600V 17A TO220FP

STMicroelectronics
3,817 -

RFQ

STF24NM60N

Технические

Tube MDmesh™ II Active N-Channel MOSFET (Metal Oxide) 600 V 17A (Tc) 10V 190mOhm @ 8A, 10V 4V @ 250µA 46 nC @ 10 V ±30V 1400 pF @ 50 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHH120N60E-T1-GE3

SIHH120N60E-T1-GE3

MOSFET N-CH 600V 24A PPAK 8 X 8

Vishay Siliconix
2,356 -

RFQ

SIHH120N60E-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 120mOhm @ 12A, 10V 5V @ 250µA 44 nC @ 10 V ±30V 1600 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STI28N60M2

STI28N60M2

MOSFET N-CH 600V 22A I2PAK

STMicroelectronics
2,328 -

RFQ

STI28N60M2

Технические

Tube MDmesh™ M2 Active N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) 10V 150mOhm @ 11A, 10V 4V @ 250µA 36 nC @ 10 V ±25V 1440 pF @ 100 V - 170W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP22N60EF-GE3

SIHP22N60EF-GE3

MOSFET N-CH 600V 19A TO220AB

Vishay Siliconix
2,190 -

RFQ

SIHP22N60EF-GE3

Технические

Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 19A (Tc) 10V 182mOhm @ 11A, 10V 4V @ 250µA 96 nC @ 10 V ±30V 1423 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCPF150N65F

FCPF150N65F

MOSFET N-CH 650V 14.9A TO220F

onsemi
2,573 -

RFQ

FCPF150N65F

Технические

Bulk,Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 14.9A (Tc) 10V 150mOhm @ 12A, 10V 5V @ 2.4mA 94 nC @ 10 V ±20V 3737 pF @ 100 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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