Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDBL0110N60

FDBL0110N60

MOSFET N-CH 60V 300A 8HPSOF

onsemi
3,864 -

RFQ

FDBL0110N60

Технические

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 300A (Tc) 10V 1.1mOhm @ 80A, 10V 4V @ 250µA 220 nC @ 10 V ±20V 13650 pF @ 30 V - 429W (Tj) -55°C ~ 175°C (TJ) Surface Mount
SIHP23N60E-GE3

SIHP23N60E-GE3

MOSFET N-CH 600V 23A TO220AB

Vishay Siliconix
3,411 -

RFQ

SIHP23N60E-GE3

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 23A (Tc) 10V 158mOhm @ 12A, 10V 4V @ 250µA 95 nC @ 10 V ±30V 2418 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP80NF55-08

STP80NF55-08

MOSFET N-CH 55V 80A TO220AB

STMicroelectronics
3,462 -

RFQ

STP80NF55-08

Технические

Tube STripFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 8mOhm @ 40A, 10V 4V @ 250µA 155 nC @ 10 V ±20V 3850 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
STP20N65M5

STP20N65M5

MOSFET N-CH 650V 18A TO220

STMicroelectronics
3,078 -

RFQ

STP20N65M5

Технические

Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Tc) 10V 190mOhm @ 9A, 10V 5V @ 250µA 45 nC @ 10 V ±25V 1345 pF @ 100 V - 130W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDP027N08B-F102

FDP027N08B-F102

MOSFET N-CH 80V 120A TO220-3

onsemi
3,006 -

RFQ

FDP027N08B-F102

Технические

Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 2.7mOhm @ 100A, 10V 4.5V @ 250µA 178 nC @ 10 V ±20V 13530 pF @ 40 V - 246W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPA032N06N3GXKSA1

IPA032N06N3GXKSA1

MOSFET N-CH 60V 84A TO220-3-31

Infineon Technologies
3,795 -

RFQ

IPA032N06N3GXKSA1

Технические

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 84A (Tc) 10V 3.2mOhm @ 80A, 10V 4V @ 118µA 165 nC @ 10 V ±20V 13000 pF @ 30 V - 41W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHG14N50D-GE3

SIHG14N50D-GE3

MOSFET N-CH 500V 14A TO247AC

Vishay Siliconix
3,957 -

RFQ

SIHG14N50D-GE3

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 14A (Tc) 10V 400mOhm @ 7A, 10V 5V @ 250µA 58 nC @ 10 V ±30V 1144 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF8N90K5

STF8N90K5

MOSFET N-CH 900V 8A TO220FP

STMicroelectronics
2,399 -

RFQ

STF8N90K5

Технические

Tube MDmesh™ K5 Active N-Channel MOSFET (Metal Oxide) 900 V 8A (Tc) 10V - 5V @ 100µA - ±30V - - 130W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK12E80W,S1X

TK12E80W,S1X

MOSFET N-CH 800V 11.5A TO220

Toshiba Semiconductor and Storage
2,125 -

RFQ

TK12E80W,S1X

Технические

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 800 V 11.5A (Ta) 10V 450mOhm @ 5.8A, 10V 4V @ 570µA 23 nC @ 10 V ±20V 1400 pF @ 300 V - 165W (Tc) 150°C Through Hole
IPP65R225C7XKSA1

IPP65R225C7XKSA1

MOSFET N-CH 650V 11A TO220-3

Infineon Technologies
3,428 -

RFQ

IPP65R225C7XKSA1

Технические

Bulk,Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 225mOhm @ 4.8A, 10V 4V @ 240µA 20 nC @ 10 V ±20V 996 pF @ 400 V - 63W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP140NF55

STP140NF55

MOSFET N-CH 55V 80A TO220AB

STMicroelectronics
2,766 -

RFQ

STP140NF55

Технические

Tube STripFET™ II Not For New Designs N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 8mOhm @ 40A, 10V 4V @ 250µA 142 nC @ 10 V ±20V 5300 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB60R120C7ATMA1

IPB60R120C7ATMA1

MOSFET N-CH 650V 19A TO263-3

Infineon Technologies
3,104 -

RFQ

IPB60R120C7ATMA1

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 19A (Tc) 10V 120mOhm @ 7.8A, 10V 4V @ 390µA 34 nC @ 10 V ±20V 1500 pF @ 400 V - 92W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHG15N60E-GE3

SIHG15N60E-GE3

MOSFET N-CH 600V 15A TO247AC

Vishay Siliconix
3,547 -

RFQ

SIHG15N60E-GE3

Технические

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 280mOhm @ 8A, 10V 4V @ 250µA 78 nC @ 10 V ±30V 1350 pF @ 100 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP10LN80K5

STP10LN80K5

MOSFET N-CH 800V 8A TO220

STMicroelectronics
3,436 -

RFQ

STP10LN80K5

Технические

Tube MDmesh™ Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 630mOhm @ 4A, 10V 5V @ 100µA 15 nC @ 10 V ±30V 427 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
SUP90140E-GE3

SUP90140E-GE3

MOSFET N-CH 200V 90A TO220AB

Vishay Siliconix
2,537 -

RFQ

SUP90140E-GE3

Технические

Tube ThunderFET® Active N-Channel MOSFET (Metal Oxide) 200 V 90A (Tc) 7.5V, 10V 17mOhm @ 30A, 10V 4V @ 250µA 96 nC @ 10 V ±20V 4132 pF @ 100 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
STP9NK70ZFP

STP9NK70ZFP

MOSFET N-CH 700V 7.5A TO220FP

STMicroelectronics
935 -

RFQ

STP9NK70ZFP

Технические

Tube SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 700 V 7.5A (Tc) 10V 1.2Ohm @ 4A, 10V 4.5V @ 100µA 68 nC @ 10 V ±30V 1370 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI90N04S402AKSA1

IPI90N04S402AKSA1

MOSFET N-CH 40V 90A TO262-3

Infineon Technologies
10,350 -

RFQ

IPI90N04S402AKSA1

Технические

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 10V 2.5mOhm @ 90A, 10V 4V @ 95µA 118 nC @ 10 V ±20V 9430 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP440PBF

IRFP440PBF

MOSFET N-CH 500V 8.8A TO247-3

Vishay Siliconix
2,377 -

RFQ

IRFP440PBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 8.8A (Tc) 10V 850mOhm @ 5.3A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1300 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLU024PBF

IRLU024PBF

MOSFET N-CH 60V 14A TO251AA

Vishay Siliconix
2,275 -

RFQ

IRLU024PBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 14A (Tc) 4V, 5V 100mOhm @ 8.4A, 5V 2V @ 250µA 18 nC @ 5 V ±10V 870 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP11N80E-GE3

SIHP11N80E-GE3

MOSFET N-CH 800V 12A TO220AB

Vishay Siliconix
3,869 -

RFQ

SIHP11N80E-GE3

Технические

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 12A (Tc) 10V 440mOhm @ 5.5A, 10V 4V @ 250µA 88 nC @ 10 V ±30V 1670 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Through Hole
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