Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIHG33N60E-GE3

SIHG33N60E-GE3

MOSFET N-CH 600V 33A TO247AC

Vishay Siliconix
2,163 -

RFQ

SIHG33N60E-GE3

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 33A (Tc) 10V 99mOhm @ 16.5A, 10V 4V @ 250µA 150 nC @ 10 V ±30V 3508 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHW33N60E-GE3

SIHW33N60E-GE3

MOSFET N-CH 600V 33A TO247AD

Vishay Siliconix
2,903 -

RFQ

SIHW33N60E-GE3

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 33A (Tc) 10V 99mOhm @ 16.5A, 10V 4V @ 250µA 150 nC @ 10 V ±30V 3508 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM70N380CI C0G

TSM70N380CI C0G

MOSFET N-CH 700V 11A ITO220AB

Taiwan Semiconductor Corporation
2,024 -

RFQ

TSM70N380CI C0G

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 700 V 11A (Tc) 10V 380mOhm @ 3.3A, 10V 4V @ 250µA 18.8 nC @ 10 V ±30V 981 pF @ 100 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP45N60DM2AG

STP45N60DM2AG

MOSFET N-CH 600V 34A TO220

STMicroelectronics
3,413 -

RFQ

STP45N60DM2AG

Технические

Tube Automotive, AEC-Q101, MDmesh™ DM2 Active N-Channel MOSFET (Metal Oxide) 600 V 34A (Tc) 10V 93mOhm @ 17A, 10V 5V @ 250µA 56 nC @ 10 V ±25V 2500 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP60R099P6XKSA1

IPP60R099P6XKSA1

MOSFET N-CH 600V 37.9A TO220-3

Infineon Technologies
2,994 -

RFQ

IPP60R099P6XKSA1

Технические

Bulk,Tube CoolMOS™ P6 Active N-Channel MOSFET (Metal Oxide) 600 V 37.9A (Tc) 10V 99mOhm @ 14.5A, 10V 4.5V @ 1.21mA 70 nC @ 10 V ±20V 3330 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW38N65M5

STW38N65M5

MOSFET N-CH 650V 30A TO247

STMicroelectronics
2,728 -

RFQ

STW38N65M5

Технические

Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 95mOhm @ 15A, 10V 5V @ 250µA 71 nC @ 10 V ±25V 3000 pF @ 100 V - 190W (Tc) 150°C (TJ) Through Hole
IPA028N08N3GXKSA1

IPA028N08N3GXKSA1

MOSFET N-CH 80V 89A TO220-FP

Infineon Technologies
3,214 -

RFQ

IPA028N08N3GXKSA1

Технические

Tube OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 80 V 89A (Tc) 6V, 10V 2.8mOhm @ 89A, 10V 3.5V @ 270µA 206 nC @ 10 V ±20V 14200 pF @ 40 V - 42W (Tc) -55°C ~ 175°C (TJ) Through Hole
NVBLS0D7N06C

NVBLS0D7N06C

MOSFET N-CH 60V 54A/470A 8HPSOF

onsemi
2,661 -

RFQ

NVBLS0D7N06C

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 54A (Ta), 470A (Tc) 10V 0.75mOhm @ 80A, 10V 4V @ 661µA 170 nC @ 10 V ±20V 13730 pF @ 30 V - 4.2W (Ta), 314W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TK31N60W,S1VF

TK31N60W,S1VF

MOSFET N CH 600V 30.8A TO247

Toshiba Semiconductor and Storage
3,118 -

RFQ

TK31N60W,S1VF

Технические

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 88mOhm @ 15.4A, 10V 3.7V @ 1.5mA 86 nC @ 10 V ±30V 3000 pF @ 300 V Super Junction 230W (Tc) 150°C (TJ) Through Hole
STWA20N95K5

STWA20N95K5

MOSFET N-CH 950V 17.5A TO247

STMicroelectronics
3,609 -

RFQ

STWA20N95K5

Технические

Tube SuperMESH5™ Active N-Channel MOSFET (Metal Oxide) 950 V 17.5A (Tc) 10V 330mOhm @ 9A, 10V 5V @ 100µA 40 nC @ 10 V ±30V 1500 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW48N60M2-4

STW48N60M2-4

MOSFET N-CH 600V 42A TO247-4L

STMicroelectronics
2,689 -

RFQ

STW48N60M2-4

Технические

Tube MDmesh™ M2 Active N-Channel MOSFET (Metal Oxide) 600 V 42A (Tc) 10V 70mOhm @ 21A, 10V 4V @ 250µA 70 nC @ 10 V ±25V 3060 pF @ 100 V - 300W (Tc) 150°C (TJ) Through Hole
IXFH42N60P3

IXFH42N60P3

MOSFET N-CH 600V 42A TO247AD

IXYS
2,619 -

RFQ

IXFH42N60P3

Технические

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 600 V 42A (Tc) 10V 185mOhm @ 500mA, 10V 5V @ 4mA 78 nC @ 10 V ±30V 5150 pF @ 25 V - 830W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW60R060C7XKSA1

IPW60R060C7XKSA1

MOSFET N-CH 600V 35A TO247-3

Infineon Technologies
240 -

RFQ

IPW60R060C7XKSA1

Технические

Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 600 V 35A (Tc) 10V 60mOhm @ 15.9A, 10V 4V @ 800µA 68 nC @ 10 V ±20V 2850 pF @ 400 V - 162W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH52N50P2

IXFH52N50P2

MOSFET N-CH 500V 52A TO247AD

IXYS
3,029 -

RFQ

IXFH52N50P2

Технические

Tube HiPerFET™, PolarP2™ Active N-Channel MOSFET (Metal Oxide) 500 V 52A (Tc) 10V 120mOhm @ 26A, 10V 4.5V @ 4mA 113 nC @ 10 V ±30V 6800 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW12N170K5

STW12N170K5

MOSFET N-CH 1700V 5A TO247

STMicroelectronics
3,286 -

RFQ

STW12N170K5

Технические

Tube MDmesh™ K5 Active N-Channel MOSFET (Metal Oxide) 1700 V 5A (Tc) 10V 2.9Ohm @ 2.5A, 10V 5V @ 100µA 37 nC @ 10 V ±30V 1380 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF57N65M5

STF57N65M5

MOSFET N-CH 650V 42A TO220FP

STMicroelectronics
3,345 -

RFQ

STF57N65M5

Технические

Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 42A (Tc) 10V 63mOhm @ 21A, 10V 5V @ 250µA 98 nC @ 10 V ±25V 4200 pF @ 100 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH30N85X

IXFH30N85X

MOSFET N-CH 850V 30A TO247AD

IXYS
2,865 -

RFQ

IXFH30N85X

Технические

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 850 V 30A (Tc) 10V 220mOhm @ 500mA, 10V 5.5V @ 2.5mA 68 nC @ 10 V ±30V 2460 pF @ 25 V - 695W (Tc) -55°C ~ 150°C (TJ) Through Hole
SCTH35N65G2V-7

SCTH35N65G2V-7

SICFET N-CH 650V 45A H2PAK-7

STMicroelectronics
2,289 -

RFQ

SCTH35N65G2V-7

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel SiCFET (Silicon Carbide) 650 V 45A (Tc) 18V, 20V 67mOhm @ 20A, 20V 3.2V @ 1mA 73 nC @ 20 V +22V, -10V 1370 pF @ 400 V - 208W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STW34NM60ND

STW34NM60ND

MOSFET N-CH 600V 29A TO247

STMicroelectronics
2,853 -

RFQ

STW34NM60ND

Технические

Tube FDmesh™ II Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 110mOhm @ 14.5A, 10V 5V @ 250µA 80.4 nC @ 10 V ±25V 2785 pF @ 50 V - 190W (Tc) 150°C (TJ) Through Hole
IPW65R070C6FKSA1

IPW65R070C6FKSA1

MOSFET N-CH 650V 53.5A TO247-3

Infineon Technologies
3,396 -

RFQ

IPW65R070C6FKSA1

Технические

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 53.5A (Tc) 10V 70mOhm @ 17.6A, 10V 3.5V @ 1.76mA 170 nC @ 10 V ±20V 3900 pF @ 100 V - 391W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
Нахождение Чипа

Главная

Нахождение Чипа

Продукт

Нахождение Чипа

Телефон

Нахождение Чипа

Пользователь