Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
R6547KNZ4C13

R6547KNZ4C13

MOSFET N-CH 650V 47A TO247

Rohm Semiconductor
2,420 -

RFQ

R6547KNZ4C13

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 47A (Tc) 10V 80mOhm @ 25.8A, 10V 5V @ 1.72mA 100 nC @ 10 V ±20V 4100 pF @ 25 V - 480W (Tc) 150°C (TJ) Through Hole
SCT4062KEHRC11

SCT4062KEHRC11

1200V, 26A, 3-PIN THD, TRENCH-ST

Rohm Semiconductor
3,912 -

RFQ

SCT4062KEHRC11

Технические

Tube Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 1200 V 26A (Tc) 18V 81mOhm @ 12A, 18V 4.8V @ 6.45mA 64 nC @ 18 V +21V, -4V 1498 pF @ 800 V - 115W 175°C (TJ) Through Hole
SCT4062KRHRC15

SCT4062KRHRC15

1200V, 26A, 4-PIN THD, TRENCH-ST

Rohm Semiconductor
2,299 -

RFQ

SCT4062KRHRC15

Технические

Tube Automotive, AEC-Q101 Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 26A (Tc) 18V 81mOhm @ 12A, 18V 4.8V @ 6.45mA 64 nC @ 18 V +21V, -4V 1498 pF @ 800 V - 115W 175°C (TJ) Through Hole
IRFB4310GPBF

IRFB4310GPBF

MOSFET N-CH 100V 130A TO220AB

Infineon Technologies
2,568 -

RFQ

IRFB4310GPBF

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 130A (Tc) 10V 7mOhm @ 75A, 10V 4V @ 250µA 250 nC @ 10 V ±20V 7670 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB4310ZGPBF

IRFB4310ZGPBF

MOSFET N-CH 100V 120A TO220AB

Infineon Technologies
2,401 -

RFQ

IRFB4310ZGPBF

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 6mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6860 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL4229PBF

IRFSL4229PBF

MOSFET N-CH 250V 45A TO262

Infineon Technologies
2,301 -

RFQ

IRFSL4229PBF

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 45A (Tc) 10V 48mOhm @ 26A, 10V 5V @ 250µA 110 nC @ 10 V ±30V 4560 pF @ 25 V - 330W (Tc) -40°C ~ 175°C (TJ) Through Hole
IRLB3036GPBF

IRLB3036GPBF

MOSFET N-CH 60V 195A TO220AB

Infineon Technologies
2,302 -

RFQ

IRLB3036GPBF

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 4.5V, 10V 2.4mOhm @ 165A, 10V 2.5V @ 250µA 140 nC @ 4.5 V ±16V 11210 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLU8726PBF

IRLU8726PBF

MOSFET N-CH 30V 86A IPAK

Infineon Technologies
2,608 -

RFQ

IRLU8726PBF

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 86A (Tc) 4.5V, 10V 5.8mOhm @ 25A, 10V 2.35V @ 50µA 23 nC @ 4.5 V ±20V 2150 pF @ 15 V - 75W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLU8729-701PBF

IRLU8729-701PBF

MOSFET N-CH 30V 58A IPAK

Infineon Technologies
2,132 -

RFQ

IRLU8729-701PBF

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 58A (Tc) 4.5V, 10V 8.9mOhm @ 25A, 10V 2.35V @ 25µA 16 nC @ 4.5 V ±20V 1350 pF @ 15 V - 55W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF1405ZSTRL7PP

IRF1405ZSTRL7PP

MOSFET N-CH 55V 120A D2PAK

Infineon Technologies
2,837 -

RFQ

IRF1405ZSTRL7PP

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 120A (Tc) 10V 4.9mOhm @ 88A, 10V 4V @ 150µA 230 nC @ 10 V ±20V 5360 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6201TRPBF

IRF6201TRPBF

MOSFET N-CH 20V 27A 8SO

Infineon Technologies
3,789 -

RFQ

IRF6201TRPBF

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 27A (Ta) 2.5V, 4.5V 2.45mOhm @ 27A, 4.5V 1.1V @ 100µA 195 nC @ 4.5 V ±12V 8555 pF @ 16 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF6709S2TR1PBF

IRF6709S2TR1PBF

MOSFET N-CH 25V 12A DIRECTFET

Infineon Technologies
2,435 -

RFQ

IRF6709S2TR1PBF

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 12A (Ta), 39A (Tc) 4.5V, 10V 7.8mOhm @ 12A, 10V 2.35V @ 25µA 12 nC @ 4.5 V ±20V 1010 pF @ 13 V - 1.8W (Ta), 21W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6711STR1PBF

IRF6711STR1PBF

MOSFET N-CH 25V 19A DIRECTFET

Infineon Technologies
2,809 -

RFQ

IRF6711STR1PBF

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 19A (Ta), 84A (Tc) 4.5V, 10V 3.8mOhm @ 19A, 10V 2.35V @ 25µA 20 nC @ 4.5 V ±20V 1810 pF @ 13 V - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6798MTR1PBF

IRF6798MTR1PBF

MOSFET N-CH 25V 37A DIRECTFET

Infineon Technologies
2,740 -

RFQ

IRF6798MTR1PBF

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 37A (Ta), 197A (Tc) 4.5V, 10V 1.3mOhm @ 37A, 10V 2.35V @ 150µA 75 nC @ 4.5 V ±20V 6560 pF @ 13 V Schottky Diode (Body) 2.8W (Ta), 78W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF7220GTRPBF

IRF7220GTRPBF

MOSFET P-CH 14V 11A 8SO

Infineon Technologies
3,273 -

RFQ

IRF7220GTRPBF

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 14 V 11A (Ta) 2.5V, 4.5V 12mOhm @ 11A, 4.5V 600mV @ 250µA (Min) 125 nC @ 5 V ±12V 8075 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7406GTRPBF

IRF7406GTRPBF

MOSFET P-CH 30V 5.8A 8SO

Infineon Technologies
2,146 -

RFQ

IRF7406GTRPBF

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 5.8A (Ta) 4.5V, 10V 45mOhm @ 2.8A, 10V 1V @ 250µA 59 nC @ 10 V ±20V 1100 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7424GTRPBF

IRF7424GTRPBF

MOSFET P-CH 30V 11A 8SO

Infineon Technologies
2,911 -

RFQ

IRF7424GTRPBF

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 13.5mOhm @ 11A, 10V 2.5V @ 250µA 110 nC @ 10 V ±20V 4030 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7524D1GTRPBF

IRF7524D1GTRPBF

MOSFET P-CH 20V 1.7A 8USMD

Infineon Technologies
2,115 -

RFQ

IRF7524D1GTRPBF

Технические

Tape & Reel (TR),Cut Tape (CT) FETKY™ Obsolete P-Channel MOSFET (Metal Oxide) 20 V 1.7A (Ta) 2.7V, 4.5V 270mOhm @ 1.2A, 4.5V 700mV @ 250µA (Min) 8.2 nC @ 4.5 V ±12V 240 pF @ 15 V Schottky Diode (Isolated) 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7811WGTRPBF

IRF7811WGTRPBF

MOSFET N-CH 30V 14A 8SO

Infineon Technologies
3,843 -

RFQ

IRF7811WGTRPBF

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 4.5V 12mOhm @ 15A, 4.5V 1V @ 250µA 33 nC @ 5 V ±12V 2335 pF @ 16 V - 3.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7821GTRPBF

IRF7821GTRPBF

MOSFET N-CH 30V 13.6A 8SO

Infineon Technologies
2,870 -

RFQ

IRF7821GTRPBF

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13.6A (Ta) 4.5V, 10V 9.1mOhm @ 13A, 10V 1V @ 250µA 14 nC @ 4.5 V ±20V 1010 pF @ 15 V - 2.5W (Ta) -55°C ~ 155°C (TJ) Surface Mount
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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