Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
C3M0120100J

C3M0120100J

SICFET N-CH 1000V 22A D2PAK-7

Wolfspeed, Inc.
3,573 -

RFQ

C3M0120100J

Технические

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 1000 V 22A (Tc) 15V 155mOhm @ 15A, 15V 3.5V @ 3mA 21.5 nC @ 15 V +15V, -4V 350 pF @ 600 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STW69N65M5-4

STW69N65M5-4

MOSFET N-CH 650V 58A TO247-4L

STMicroelectronics
3,097 -

RFQ

STW69N65M5-4

Технические

Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 58A (Tc) 10V 45mOhm @ 29A, 10V 5V @ 250µA 143 nC @ 10 V ±25V 6420 pF @ 100 V - 330W (Tc) 150°C (TJ) Through Hole
APT77N60BC6

APT77N60BC6

MOSFET N-CH 600V 77A TO247

Microchip Technology
2,349 -

RFQ

APT77N60BC6

Технические

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 77A (Tc) 10V 41mOhm @ 44.4A, 10V 3.6V @ 2.96mA 260 nC @ 10 V ±20V 13600 pF @ 25 V Super Junction 481W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW65R099CFD7AXKSA1

IPW65R099CFD7AXKSA1

MOSFET N-CH 650V 24A TO247-3-41

Infineon Technologies
2,765 -

RFQ

IPW65R099CFD7AXKSA1

Технические

Tube Automotive, AEC-Q101, CoolMOS™ CFD7A Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 99mOhm @ 12.5A, 10V 4.5V @ 630µA 53 nC @ 10 V ±20V 2513 pF @ 400 V - 127W (Tc) -40°C ~ 150°C (TJ) Through Hole
IXTR48P20P

IXTR48P20P

MOSFET P-CH 200V 30A ISOPLUS247

IXYS
2,536 -

RFQ

IXTR48P20P

Технические

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 200 V 30A (Tc) 10V 93mOhm @ 24A, 10V 4.5V @ 250µA 103 nC @ 10 V ±20V 5400 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT77N60SC6/TR

APT77N60SC6/TR

MOSFET N-CH 600V 77A D3PAK

Microchip Technology
2,383 -

RFQ

APT77N60SC6/TR

Технические

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 77A (Tc) 10V 41mOhm @ 44.4A, 10V 3.6V @ 2.96mA 260 nC @ 10 V ±20V 13600 pF @ 25 V - 481W (Tc) -55°C ~ 150°C (TJ) Surface Mount
R6047KNZ4C13

R6047KNZ4C13

MOSFET N-CH 600V 47A TO247

Rohm Semiconductor
2,183 -

RFQ

R6047KNZ4C13

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 72mOhm @ 25.8A, 10V 5V @ 1mA 100 nC @ 10 V ±20V 4300 pF @ 25 V - 481W (Tc) 150°C (TJ) Through Hole
STW70N60DM6

STW70N60DM6

MOSFET N-CH 600V 62A TO247

STMicroelectronics
2,308 -

RFQ

STW70N60DM6

Технические

Tube MDmesh™ DM6 Active N-Channel MOSFET (Metal Oxide) 600 V 62A (Tc) - - - - - - - - - Through Hole
R6047ENZ4C13

R6047ENZ4C13

MOSFET N-CH 600V 47A TO247

Rohm Semiconductor
3,692 -

RFQ

R6047ENZ4C13

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 72mOhm @ 25.8A, 10V 4V @ 1mA 145 nC @ 10 V ±20V 3850 pF @ 25 V - 481W (Tc) 150°C (TJ) Through Hole
SCT4045DRC15

SCT4045DRC15

750V, 45M, 4-PIN THD, TRENCH-STR

Rohm Semiconductor
2,389 -

RFQ

SCT4045DRC15

Технические

Tube - Active N-Channel SiCFET (Silicon Carbide) 750 V 34A (Tc) 18V 59mOhm @ 17A, 18V 4.8V @ 8.89mA 63 nC @ 18 V +21V, -4V 1460 pF @ 500 V - 115W 175°C (TJ) Through Hole
SCT4045DEC11

SCT4045DEC11

750V, 45M, 3-PIN THD, TRENCH-STR

Rohm Semiconductor
3,022 -

RFQ

SCT4045DEC11

Технические

Tube - Active N-Channel SiCFET (Silicon Carbide) 750 V 34A (Tc) 18V 59mOhm @ 17A, 18V 4.8V @ 8.89mA 63 nC @ 18 V +21V, -4V 14600 pF @ 500 V - 115W 175°C (TJ) Through Hole
APT75M50L

APT75M50L

MOSFET N-CH 500V 75A TO264

Microchip Technology
2,448 -

RFQ

APT75M50L

Технические

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 500 V 75A (Tc) 10V 75mOhm @ 37A, 10V 5V @ 2.5mA 290 nC @ 10 V ±30V 11600 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
SCT2280KEHRC11

SCT2280KEHRC11

1200V, 14A, THD, SILICON-CARBIDE

Rohm Semiconductor
3,945 -

RFQ

SCT2280KEHRC11

Технические

Tube Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 1200 V 14A (Tc) 18V 364mOhm @ 4A, 18V 4V @ 1.4mA 36 nC @ 400 V +22V, -6V 667 pF @ 800 V - 108W (Tc) 175°C (TJ) Through Hole
SCT4062KRC15

SCT4062KRC15

1200V, 62M, 4-PIN THD, TRENCH-ST

Rohm Semiconductor
2,656 -

RFQ

SCT4062KRC15

Технические

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 26A (Tc) 18V 81mOhm @ 12A, 18V 4.8V @ 6.45mA 64 nC @ 18 V +21V, -4V 1498 pF @ 800 V - 115W 175°C (TJ) Through Hole
SCT4062KEC11

SCT4062KEC11

1200V, 62M, 3-PIN THD, TRENCH-ST

Rohm Semiconductor
3,446 -

RFQ

SCT4062KEC11

Технические

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 26A (Tc) 18V 81mOhm @ 12A, 18V 4.8V @ 6.45mA 64 nC @ 18 V +21V, -4V 1498 pF @ 800 V - 115W 175°C (TJ) Through Hole
SCT4045DRHRC15

SCT4045DRHRC15

750V, 34A, 4-PIN THD, TRENCH-STR

Rohm Semiconductor
3,263 -

RFQ

SCT4045DRHRC15

Технические

Tube Automotive, AEC-Q101 Active N-Channel SiC (Silicon Carbide Junction Transistor) 750 V 34A (Tc) 18V 59mOhm @ 17A, 18V 4.8V @ 8.89mA 63 nC @ 18 V +21V, -4V 1460 pF @ 500 V - 115W 175°C (TJ) Through Hole
STP60N3LH5

STP60N3LH5

MOSFET N-CH 30V 48A TO220AB

STMicroelectronics
2,741 -

RFQ

STP60N3LH5

Технические

Tube STripFET™ V Obsolete N-Channel MOSFET (Metal Oxide) 30 V 48A (Tc) 5V, 10V 8.4mOhm @ 24A, 10V 3V @ 250µA 8.8 nC @ 5 V ±20V 1350 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
STP7N52DK3

STP7N52DK3

MOSFET N-CH 525V 6A TO220AB

STMicroelectronics
3,152 -

RFQ

STP7N52DK3

Технические

Tube SuperFREDmesh3™ Obsolete N-Channel MOSFET (Metal Oxide) 525 V 6A (Tc) 10V 1.15Ohm @ 3A, 10V 4.5V @ 50µA 33 nC @ 10 V ±30V 870 pF @ 50 V - 90W (Tc) 150°C (TJ) Through Hole
STP80N20M5

STP80N20M5

MOSFET N-CH 200V 61A TO220AB

STMicroelectronics
3,536 -

RFQ

STP80N20M5

Технические

Tube MDmesh™ V Obsolete N-Channel MOSFET (Metal Oxide) 200 V 61A (Tc) 10V 23mOhm @ 30.5A, 10V 5V @ 250µA 104 nC @ 10 V ±25V 4329 pF @ 50 V - 190W (Tc) 150°C (TJ) Through Hole
STW17N62K3

STW17N62K3

MOSFET N-CH 620V 15.5A TO247-3

STMicroelectronics
2,224 -

RFQ

STW17N62K3

Технические

Tube SuperMESH3™ Obsolete N-Channel MOSFET (Metal Oxide) 620 V 15.5A (Tc) 10V 380mOhm @ 7.5A, 10V 4.5V @ 100µA 94 nC @ 10 V ±30V 2500 pF @ 50 V - 190W (Tc) 150°C (TJ) Through Hole
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