Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTX102N65X2

IXTX102N65X2

MOSFET N-CH 650V 102A PLUS247-3

IXYS
2,807 -

RFQ

IXTX102N65X2

Технические

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 102A (Tc) 10V 30mOhm @ 51A, 10V 5V @ 250µA 152 nC @ 10 V ±30V 10900 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
SCTW35N65G2VAG

SCTW35N65G2VAG

SICFET N-CH 650V 45A HIP247

STMicroelectronics
2,641 -

RFQ

SCTW35N65G2VAG

Технические

Tube Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 650 V 45A (Tc) 18V, 20V 67mOhm @ 20A, 20V 5V @ 1mA 73 nC @ 20 V +22V, -10V 1370 pF @ 400 V - 240W (Tc) -55°C ~ 200°C (TJ) Through Hole
IXFK94N50P2

IXFK94N50P2

MOSFET N-CH 500V 94A TO264AA

IXYS
3,652 -

RFQ

IXFK94N50P2

Технические

Tube HiPerFET™, PolarP2™ Active N-Channel MOSFET (Metal Oxide) 500 V 94A (Tc) 10V 55mOhm @ 500mA, 10V 5V @ 8mA 220 nC @ 10 V ±30V 13700 pF @ 25 V - 1300W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT12060LVRG

APT12060LVRG

MOSFET N-CH 1200V 20A TO264

Microchip Technology
2,744 -

RFQ

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 1200 V 20A (Tc) 10V 600mOhm @ 10A, 10V 4V @ 2.5mA 650 nC @ 10 V ±30V 9500 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Through Hole
SCT2160KEGC11

SCT2160KEGC11

1200V, 22A, THD, SILICON-CARBIDE

Rohm Semiconductor
3,799 -

RFQ

SCT2160KEGC11

Технические

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 22A (Tc) 18V 208mOhm @ 7A, 18V 4V @ 2.5mA 62 nC @ 18 V +22V, -6V 1200 pF @ 800 V - 165W (Tc) 175°C (TJ) Through Hole
IXFT44N50P

IXFT44N50P

MOSFET N-CH 500V 44A TO268

IXYS
2,762 -

RFQ

IXFT44N50P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 500 V 44A (Tc) 10V 140mOhm @ 22A, 10V 5V @ 4mA 98 nC @ 10 V ±30V 5440 pF @ 25 V - 658W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SCT2160KEHRC11

SCT2160KEHRC11

1200V, 22A, THD, SILICON-CARBIDE

Rohm Semiconductor
2,415 -

RFQ

SCT2160KEHRC11

Технические

Tube Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 1200 V 22A (Tc) 18V 208mOhm @ 7A, 18V 4V @ 2.5mA 62 nC @ 18 V +22V, -6V 1200 pF @ 800 V - 165W (Tc) 175°C (TJ) Through Hole
SCTW40N120G2VAG

SCTW40N120G2VAG

SICFET N-CH 1200V 33A HIP247

STMicroelectronics
3,786 -

RFQ

SCTW40N120G2VAG

Технические

Tube Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 1200 V 33A (Tc) 18V 105mOhm @ 20A, 18V 5V @ 1mA 63 nC @ 18 V +22V, -10V 1230 pF @ 800 V - 290W (Tc) -55°C ~ 200°C (TJ) Through Hole
SCT4026DRC15

SCT4026DRC15

750V, 26M, 4-PIN THD, TRENCH-STR

Rohm Semiconductor
3,686 -

RFQ

SCT4026DRC15

Технические

Tube - Active N-Channel SiCFET (Silicon Carbide) 750 V 56A (Tc) 18V 34mOhm @ 29A, 18V 4.8V @ 15.4mA 94 nC @ 18 V +21V, -4V 2320 pF @ 500 V - 176W 175°C (TJ) Through Hole
SCT4026DEC11

SCT4026DEC11

750V, 26M, 3-PIN THD, TRENCH-STR

Rohm Semiconductor
3,070 -

RFQ

SCT4026DEC11

Технические

Tube - Active N-Channel SiCFET (Silicon Carbide) 750 V 56A (Tc) 18V 34mOhm @ 29A, 18V 4.8V @ 15.4mA 94 nC @ 18 V +21V, -4V 2320 pF @ 500 V - 176W 175°C (TJ) Through Hole
NVH4L040N120SC1

NVH4L040N120SC1

SICFET N-CH 1200V 58A TO247-4

onsemi
2,294 -

RFQ

NVH4L040N120SC1

Технические

Tube Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 1200 V 58A (Tc) 20V 56mOhm @ 35A, 20V 4.3V @ 10mA 106 nC @ 20 V +25V, -15V 1762 pF @ 800 V - 319W (Tc) -55°C ~ 175°C (TJ) Through Hole
SCT4036KEC11

SCT4036KEC11

1200V, 36M, 3-PIN THD, TRENCH-ST

Rohm Semiconductor
2,262 -

RFQ

SCT4036KEC11

Технические

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 43A (Tc) 18V 47mOhm @ 21A, 18V 4.8V @ 11.1mA 91 nC @ 18 V +21V, -4V 2335 pF @ 800 V - 176W 175°C (TJ) Through Hole
SCT4036KRC15

SCT4036KRC15

1200V, 36M, 4-PIN THD, TRENCH-ST

Rohm Semiconductor
2,425 -

RFQ

SCT4036KRC15

Технические

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 43A (Tc) 18V 47mOhm @ 21A, 18V 4.8V @ 11.1mA 91 nC @ 18 V +21V, -4V 2335 pF @ 800 V - 176W 175°C (TJ) Through Hole
APT10078BLLG

APT10078BLLG

MOSFET N-CH 1000V 14A TO247

Microchip Technology
3,340 -

RFQ

APT10078BLLG

Технические

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 14A (Tc) 10V 780mOhm @ 7A, 10V 5V @ 1mA 95 nC @ 10 V ±30V 2525 pF @ 25 V - 403W (Tc) -55°C ~ 150°C (TJ) Through Hole
SCT4026DEHRC11

SCT4026DEHRC11

750V, 56A, 3-PIN THD, TRENCH-STR

Rohm Semiconductor
3,425 -

RFQ

SCT4026DEHRC11

Технические

Tube Automotive, AEC-Q101 Active N-Channel SiC (Silicon Carbide Junction Transistor) 750 V 56A (Tc) 18V 34mOhm @ 29A, 18V 4.8V @ 15.4mA 94 nC @ 18 V +21V, -4V 2320 pF @ 500 V - 176W 175°C (TJ) Through Hole
NDD03N60ZT4G

NDD03N60ZT4G

MOSFET N-CH 600V 2.6A DPAK

onsemi
8,307 -

RFQ

NDD03N60ZT4G

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2.6A (Tc) 10V 3.6Ohm @ 1.2A, 10V 4.5V @ 50µA 12 nC @ 10 V ±30V 312 pF @ 25 V - 61W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NDD04N50ZT4G

NDD04N50ZT4G

MOSFET N-CH 500V 3A DPAK

onsemi
156,496 -

RFQ

NDD04N50ZT4G

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 3A (Tc) 10V 2.7Ohm @ 1.5A, 10V 4.5V @ 50µA 12 nC @ 10 V ±30V 308 pF @ 25 V - 61W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NDD05N50ZT4G

NDD05N50ZT4G

MOSFET N-CH 500V 4.7A DPAK

onsemi
3,134 -

RFQ

NDD05N50ZT4G

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 4.7A (Tc) 10V 1.5Ohm @ 2.2A, 10V 4.5V @ 50µA 18.5 nC @ 10 V ±30V 530 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTB6411ANT4G

NTB6411ANT4G

MOSFET N-CH 100V 77A D2PAK

onsemi
2,868 -

RFQ

NTB6411ANT4G

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 77A (Tc) 10V 14mOhm @ 72A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 3700 pF @ 25 V - 217W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTB6412ANT4G

NTB6412ANT4G

MOSFET N-CH 100V 58A D2PAK

onsemi
3,190 -

RFQ

NTB6412ANT4G

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 58A (Tc) 10V 18.2mOhm @ 58A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 3500 pF @ 25 V - 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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