Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPA65R190C6XKSA1

IPA65R190C6XKSA1

MOSFET N-CH 650V 20.2A TO220

Infineon Technologies
3,628 -

RFQ

IPA65R190C6XKSA1

Технические

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 20.2A (Tc) 10V 190mOhm @ 7.3A, 10V 3.5V @ 730µA 73 nC @ 10 V ±20V 1620 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA65R600C6XKSA1

IPA65R600C6XKSA1

MOSFET N-CH 650V 7.3A TO220

Infineon Technologies
2,787 -

RFQ

IPA65R600C6XKSA1

Технические

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 7.3A (Tc) 10V 600mOhm @ 2.1A, 10V 3.5V @ 210µA 23 nC @ 10 V ±20V 440 pF @ 100 V - 28W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI100N04S4H2AKSA1

IPI100N04S4H2AKSA1

MOSFET N-CH 40V 100A TO262-3

Infineon Technologies
18,000 -

RFQ

IPI100N04S4H2AKSA1

Технические

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 2.7mOhm @ 100A, 10V 4V @ 70µA 90 nC @ 10 V ±20V 7180 pF @ 25 V - 115W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI50R250CPXKSA1

IPI50R250CPXKSA1

MOSFET N-CH 500V 13A TO262-3

Infineon Technologies
985 -

RFQ

IPI50R250CPXKSA1

Технические

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 13A (Tc) 10V 250mOhm @ 7.8A, 10V 3.5V @ 520µA 36 nC @ 10 V ±20V 1420 pF @ 100 V - 114W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI50R299CPXKSA1

IPI50R299CPXKSA1

MOSFET N-CH 500V 12A TO262-3

Infineon Technologies
3,054 -

RFQ

IPI50R299CPXKSA1

Технические

Tube,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 12A (Tc) 10V 299mOhm @ 6.6A, 10V 3.5V @ 440µA 31 nC @ 10 V ±20V 1190 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI530N15N3GXKSA1

IPI530N15N3GXKSA1

MOSFET N-CH 150V 21A TO262-3

Infineon Technologies
2,907 -

RFQ

IPI530N15N3GXKSA1

Технические

Bulk,Tube OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 150 V 21A (Tc) 8V, 10V 53mOhm @ 18A, 10V 4V @ 35µA 12 nC @ 10 V ±20V 887 pF @ 75 V - 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI65R110CFDXKSA1

IPI65R110CFDXKSA1

MOSFET N-CH 650V 31.2A TO262-3

Infineon Technologies
16,398 -

RFQ

IPI65R110CFDXKSA1

Технические

Bulk,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 31.2A (Tc) 10V 110mOhm @ 12.7A, 10V 4.5V @ 1.3mA 118 nC @ 10 V ±20V 3240 pF @ 100 V - 277.8W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI65R280C6XKSA1

IPI65R280C6XKSA1

MOSFET N-CH 650V 13.8A TO262-3

Infineon Technologies
1,500 -

RFQ

IPI65R280C6XKSA1

Технические

Bulk,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 13.8A (Tc) 10V 280mOhm @ 4.4A, 10V 3.5V @ 440µA 45 nC @ 10 V ±20V 950 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFH7194TRPBF

IRFH7194TRPBF

HEXFET POWER MOSFET

International Rectifier
2,047 -

RFQ

IRFH7194TRPBF

Технические

Bulk FASTIRFET™, HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 11A (Ta), 35A (Tc) 10V 16.4mOhm @ 21A, 10V 3.6V @ 50µA 19 nC @ 10 V ±20V 733 pF @ 50 V - 3.6W (Ta), 39W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RM8N700TI

RM8N700TI

MOSFET N-CHANNEL 700V 8A TO220F

Rectron USA
3,405 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 700 V 8A (Tj) 10V 600mOhm @ 4A, 10V 3.5V @ 250µA - ±30V 680 pF @ 50 V - 31.7W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM100N60T7

RM100N60T7

MOSFET N-CHANNEL 60V 100A TO247

Rectron USA
2,886 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 10V 6.5mOhm @ 40A, 10V 4V @ 250µA - ±20V 4800 pF @ 30 V - 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
RM8N700T2

RM8N700T2

MOSFET N-CHANNEL 700V 8A TO220-3

Rectron USA
2,212 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 700 V 8A (Tc) 10V 600mOhm @ 4A, 10V 3.5V @ 250µA - ±30V 680 pF @ 50 V - 80W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTMFS6H864NLT1G

NTMFS6H864NLT1G

MOSFET N-CH 80V 7A/22A 5DFN

onsemi
2,404 -

RFQ

NTMFS6H864NLT1G

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 80 V 7A (Ta), 22A (Tc) 4.5V, 10V 29mOhm @ 5A, 10V 2V @ 20µA 9 nC @ 10 V ±20V 431 pF @ 40 V - 3.5W (Ta), 33W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIR4604LDP-T1-GE3

SIR4604LDP-T1-GE3

N-CHANNEL 60 V (D-S) MOSFET POWE

Vishay Siliconix
3,384 -

RFQ

SIR4604LDP-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 60 V 15.6A (Ta), 51A (Tc) 4.5V, 10V 8.9mOhm @ 10A, 10V 3V @ 250µA 28 nC @ 10 V ±20V 1180 pF @ 30 V - 3.9W (Ta), 41.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR5710DP-T1-RE3

SIR5710DP-T1-RE3

N-CHANNEL 150 V (D-S) MOSFET POW

Vishay Siliconix
3,706 -

RFQ

SIR5710DP-T1-RE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 150 V 7.8A (Ta), 26.8A (Tc) 7.5V, 10V 31.5mOhm @ 10A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 770 pF @ 75 V - 4.8W (Ta), 56.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDS6682

FDS6682

MOSFET N-CH 30V 14A 8SOIC

onsemi
2,381 -

RFQ

FDS6682

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk * Last Time Buy - - - - - - - - - - - - - -
PJQ5494_R2_00001

PJQ5494_R2_00001

150V N-CHANNEL ENHANCEMENT MODE

Panjit International Inc.
2,784 -

RFQ

PJQ5494_R2_00001

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 150 V 5A (Ta), 40A (Tc) 10V 35mOhm @ 20A, 10V 4V @ 250µA 52 nC @ 10 V ±20V 2207 pF @ 75 V - 2W (Ta), 131W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDS3580

FDS3580

MOSFET N-CH 80V 7.6A 8SOIC

onsemi
2,777 -

RFQ

FDS3580

Технические

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 7.6A (Ta) 6V, 10V 29mOhm @ 7.6A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 1800 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
ISP16DP10LMXTSA1

ISP16DP10LMXTSA1

SMALL SIGNAL MOSFETS PG-SOT223-4

Infineon Technologies
3,533 -

RFQ

ISP16DP10LMXTSA1

Технические

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 100 V 2.1A (Ta), 3.9A (Tc) 4.5V, 10V 160mOhm @ 2.2A, 10V 2V @ 1.037mA 42 nC @ 10 V ±20V 2100 pF @ 50 V - 1.8W (Ta), 5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NDF06N60ZH

NDF06N60ZH

MOSFET N-CH 600V 6A TO220-3

Sanyo
3,334 -

RFQ

NDF06N60ZH

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6A (Tj) - 1.2Ohm @ 3A, 10V 4.5V @ 100µA 31 nC @ 10 V ±30V 923 pF @ 25 V - 31W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1800+ производители
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15,000+ Складские запасы
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