Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
HUF76432P3

HUF76432P3

MOSFET N-CH 60V 59A TO220-3

Fairchild Semiconductor
2,070 -

RFQ

HUF76432P3

Технические

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 59A (Tc) 4.5V, 10V 17mOhm @ 59A, 10V 3V @ 250µA 53 nC @ 10 V ±16V 1765 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Through Hole
SFI9630TU

SFI9630TU

P-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,348 -

RFQ

SFI9630TU

Технические

Bulk - Active P-Channel MOSFET (Metal Oxide) 200 V 6.5A (Tc) 10V 800mOhm @ 3.3A, 10V 4V @ 250µA 36 nC @ 10 V ±30V 956 pF @ 25 V - 3.1W (Ta), 70W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM130N100T2

RM130N100T2

MOSFET N-CH 100V 130A TO220-3

Rectron USA
3,532 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 130A (Tc) 10V 5.5mOhm @ 50A, 10V 4V @ 250µA - ±20V 4570 pF @ 25 V - 120W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM5N800LD

RM5N800LD

MOSFET N-CHANNEL 800V 5A TO252-2

Rectron USA
2,616 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 800 V 5A (Tc) 10V 1.2Ohm @ 2.5A, 10V 3.5V @ 250µA - ±30V 680 pF @ 50 V - 81W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RM170N30DF

RM170N30DF

MOSFET N-CHANNEL 30V 170A 8DFN

Rectron USA
2,484 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 30 V 170A (Tc) 4.5V, 10V 1.65mOhm @ 85A, 10V 2V @ 250µA - ±20V 7300 pF @ 15 V - 75W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RM5N800IP

RM5N800IP

MOSFET N-CHANNEL 800V 5A TO251

Rectron USA
2,572 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 5A (Tc) 10V 1.2Ohm @ 2.5A, 10V 3.5V @ 250µA - ±30V 680 pF @ 50 V - 81W (Tc) -55°C ~ 150°C (TJ) Through Hole
NVMFS025P04M8LT1G

NVMFS025P04M8LT1G

MV8 40V P-CH LL IN S08FL PACKAGE

onsemi
3,408 -

RFQ

NVMFS025P04M8LT1G

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active P-Channel MOSFET (Metal Oxide) 40 V 9.4A (Ta), 34.6A (Tc) 4.5V, 10V 23mOhm @ 15A, 10V 2.4V @ 255µA 16.3 nC @ 10 V ±20V 1058 pF @ 20 V - 3.5W (Ta), 44.1W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSZ035N03MSGATMA1

BSZ035N03MSGATMA1

MOSFET N-CH 30V 18A/40A 8TSDSON

Infineon Technologies
3,325 -

RFQ

BSZ035N03MSGATMA1

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta), 40A (Tc) 4.5V, 10V 3.5mOhm @ 20A, 10V 2V @ 250µA 74 nC @ 10 V ±20V 5700 pF @ 15 V - 2.1W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NVMFS5C466NLT1G

NVMFS5C466NLT1G

MOSFET N-CH 40V 16A/52A 5DFN

onsemi
2,402 -

RFQ

NVMFS5C466NLT1G

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 16A (Ta), 52A (Tc) 4.5V, 10V 7.3mOhm @ 10A, 10V 2.2V @ 30µA 16 nC @ 10 V ±20V 860 pF @ 25 V - 3.5W (Ta), 37W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK9Y22-60ELX

BUK9Y22-60ELX

SINGLE N-CHANNEL 60 V, 15 MOHM L

Nexperia USA Inc.
2,032 -

RFQ

BUK9Y22-60ELX

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Ta) 4.5V, 10V 14.8mOhm @ 10A, 10V 2.1V @ 1mA 48 nC @ 10 V ±10V 2592 pF @ 25 V - 95W (Ta) -55°C ~ 175°C (TJ) Surface Mount
NTTFS115P10M5

NTTFS115P10M5

MV5_100V_N_P_IN DUALS AND SINGLE

onsemi
2,955 -

RFQ

NTTFS115P10M5

Технические

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 100 V 2A (Ta), 13A (Tc) 6V, 10V 120mOhm @ 2.4A, 10V 4V @ 45µA 9.2 nC @ 10 V ±20V 637 pF @ 50 V - 900mW (Ta), 41W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTTFS5826NLTAG

NTTFS5826NLTAG

MOSFET N-CH 60V 8A 8WDFN

onsemi
2,680 -

RFQ

NTTFS5826NLTAG

Технические

Tape & Reel (TR),Cut Tape (CT) - Last Time Buy N-Channel MOSFET (Metal Oxide) 60 V 8A (Ta) 4.5V, 10V 24mOhm @ 7.5A, 10V 3V @ 250µA 25 nC @ 10 V ±20V 850 pF @ 25 V - 3.1W (Ta), 19W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NVMFS6H852NLT1G

NVMFS6H852NLT1G

MOSFET N-CH 80V 11A/42A 5DFN

onsemi
2,534 -

RFQ

NVMFS6H852NLT1G

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 80 V 11A (Ta), 42A (Tc) 4.5V, 10V 13.1mOhm @ 10A, 10V 2V @ 45µA 17 nC @ 10 V ±20V 906 pF @ 40 V - 3.6W (Ta), 54W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQJ850EP-T2_GE3

SQJ850EP-T2_GE3

N-CHANNEL 60-V (D-S) 175C MOSFET

Vishay Siliconix
2,632 -

RFQ

SQJ850EP-T2_GE3

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 24A (Tc) 4.5V, 10V 23mOhm @ 10.3A, 10V 2.5V @ 250µA 30 nC @ 10 V ±20V 1225 pF @ 30 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQD50P04-13L_T4GE3

SQD50P04-13L_T4GE3

P-CHANNEL 40-V (D-S) 175C MOSFET

Vishay Siliconix
3,557 -

RFQ

SQD50P04-13L_T4GE3

Технические

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 4.5V, 10V 13mOhm @ 17A, 10V 2.5V @ 250µA 80 nC @ 10 V ±20V 3590 pF @ 25 V - 3W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQJ446EP-T1_BE3

SQJ446EP-T1_BE3

N-CHANNEL 40-V (D-S) 175C MOSFET

Vishay Siliconix
3,888 -

RFQ

SQJ446EP-T1_BE3

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 4.5V, 10V 5mOhm @ 14A, 10V 2.5V @ 250µA 65 nC @ 10 V ±20V 4220 pF @ 20 V - 46W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF822R

IRF822R

N-CHANNEL POWER MOSFET

Harris Corporation
2,771 -

RFQ

IRF822R

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 2.2A (Tc) 10V 4Ohm @ 1.4A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 360 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
SQJA20EP-T1_BE3

SQJA20EP-T1_BE3

N-CHANNEL 200-V (D-S) 175C MOSFE

Vishay Siliconix
2,190 -

RFQ

SQJA20EP-T1_BE3

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 200 V 22.5A (Tc) 7.5V, 10V 50mOhm @ 10A, 10V 3.5V @ 250µA 27 nC @ 10 V ±20V 1300 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPI65R310CFDXKSA1

IPI65R310CFDXKSA1

MOSFET N-CH 650V 11.4A TO262-3

Infineon Technologies
14,500 -

RFQ

IPI65R310CFDXKSA1

Технические

Bulk,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 11.4A (Tc) 10V 310mOhm @ 4.4A, 10V 4.5V @ 440µA 41 nC @ 10 V ±20V 1100 pF @ 100 V - 104.2W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI65R420CFDXKSA1

IPI65R420CFDXKSA1

MOSFET N-CH 650V 8.7A TO262-3

Infineon Technologies
3,372 -

RFQ

IPI65R420CFDXKSA1

Технические

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 8.7A (Tc) 10V 420mOhm @ 3.4A, 10V 4.5V @ 340µA 32 nC @ 10 V ±20V 870 pF @ 100 V - 83.3W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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