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Транзисторы - IGBT - модули
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | IGBTType | Configuration | Voltage-CollectorEmitterBreakdown(Max) | Current-Collector(Ic)(Max) | Power-Max | Vce(on)(Max)@VgeIc | Current-CollectorCutoff(Max) | InputCapacitance(Cies)@Vce | Input | NTCThermistor | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
VS-GB200TH120NIGBT MOD 1200V 360A INT-A-PAK Vishay General Semiconductor - Diodes Division |
3,499 | - |
RFQ |
Bulk | - | Obsolete | - | Half Bridge | 1200 V | 360 A | 1136 W | 2.35V @ 15V, 200A | 5 mA | 14.9 nF @ 25 V | Standard | No | 150°C (TJ) | Chassis Mount | |
|
|
VS-GB200TH120UIGBT MOD 1200V 330A INT-A-PAK Vishay General Semiconductor - Diodes Division |
3,784 | - |
RFQ |
Bulk | - | Obsolete | - | Half Bridge | 1200 V | 330 A | 1316 W | 3.6V @ 15V, 200A | 5 mA | 16.9 nF @ 30 V | Standard | No | 150°C (TJ) | Chassis Mount | |
|
|
VS-GB200TS60NPBFIGBT MOD 600V 209A INT-A-PAK Vishay General Semiconductor - Diodes Division |
2,420 | - |
RFQ |
Технические |
Bulk | - | Obsolete | NPT | Half Bridge | 600 V | 209 A | 781 W | 2.84V @ 15V, 200A | 200 µA | - | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount |
|
|
VS-GB300AH120NIGBT MOD 1200V 620A INT-A-PAK Vishay General Semiconductor - Diodes Division |
2,752 | - |
RFQ |
Bulk | - | Obsolete | - | Single | 1200 V | 620 A | 2500 W | 1.9V @ 15V, 300A (Typ) | 5 mA | 21 nF @ 25 V | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | |
|
|
VS-GB300LH120NIGBT MOD 1200V 500A INT-A-PAK Vishay General Semiconductor - Diodes Division |
2,498 | - |
RFQ |
Bulk | - | Obsolete | - | Single | 1200 V | 500 A | 1645 W | 2V @ 15V, 300A (Typ) | 5 mA | 21.2 nF @ 25 V | Standard | No | 150°C (TJ) | Chassis Mount | |
|
|
VS-GA200HS60S1IGBT MOD 600V 480A INT-A-PAK Vishay General Semiconductor - Diodes Division |
3,248 | - |
RFQ |
Bulk | - | Obsolete | - | Half Bridge | 600 V | 480 A | 830 W | 1.21V @ 15V, 200A | 1 mA | 32.5 nF @ 30 V | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | |
|
VS-GA250SA60SIGBT MOD 600V 400A 961W SOT227 Vishay General Semiconductor - Diodes Division |
2,742 | - |
RFQ |
Tube | - | Obsolete | - | Single | 600 V | 400 A | 961 W | 1.66V @ 15V, 200A | 1 mA | 16.25 nF @ 30 V | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | |
|
VS-GB90SA120UIGBT MOD 1200V 149A 862W SOT227 Vishay General Semiconductor - Diodes Division |
3,362 | - |
RFQ |
Tube | - | Obsolete | NPT | Single | 1200 V | 149 A | 862 W | 3.9V @ 15V, 75A | 250 µA | - | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount | |
|
VS-GB90DA60UIGBT MOD 600V 147A 625W SOT227 Vishay General Semiconductor - Diodes Division |
2,584 | - |
RFQ |
Технические |
Tube | - | Obsolete | NPT | Single | 600 V | 147 A | 625 W | 2.8V @ 15V, 100A | 100 µA | - | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount |
|
VS-CPV362M4KPBFIGBT MODULE 600V 3PHASE IMS-2 Vishay General Semiconductor - Diodes Division |
2,545 | - |
RFQ |
Bulk | - | Obsolete | - | - | - | - | - | - | - | - | - | No | -40°C ~ 150°C (TJ) | Through Hole | |
|
|
VS-CPV362M4UPBFIGBT MODULE 600V 7.2A 23W IMS-2 Vishay General Semiconductor - Diodes Division |
2,750 | - |
RFQ |
Bulk | - | Obsolete | - | - | 600 V | 7.2 A | 23 W | 2.2V @ 15V, 3.9A | 250 µA | 530 pF @ 30 V | Standard | No | -40°C ~ 150°C (TJ) | Through Hole | |
|
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VS-CPV363M4FPBFIGBT MODULE 600V 3PHASE IMS-2 Vishay General Semiconductor - Diodes Division |
2,116 | - |
RFQ |
Bulk | - | Obsolete | - | - | - | - | - | - | - | - | - | No | -40°C ~ 150°C (TJ) | Through Hole | |
|
|
VS-CPV363M4KPBFIGBT MODULE 600V 11A 36W IMS-2 Vishay General Semiconductor - Diodes Division |
2,329 | - |
RFQ |
Bulk | - | Obsolete | - | - | 600 V | 11 A | 36 W | 2.1V @ 15V, 6A | 250 µA | 740 pF @ 30 V | Standard | No | -40°C ~ 150°C (TJ) | Through Hole | |
|
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VS-CPV363M4UPBFIGBT MODULE 600V 13A 36W IMS-2 Vishay General Semiconductor - Diodes Division |
3,297 | - |
RFQ |
Bulk | - | Obsolete | - | - | 600 V | 13 A | 36 W | 2.2V @ 15V, 6.8A | 250 µA | 1.1 nF @ 30 V | Standard | No | -40°C ~ 150°C (TJ) | Through Hole | |
|
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VS-CPV364M4FPBFIGBT MODULE 600V 27A 63W IMS-2 Vishay General Semiconductor - Diodes Division |
3,500 | - |
RFQ |
Bulk | - | Obsolete | - | - | 600 V | 27 A | 63 W | 1.5V @ 15V, 15A | 250 µA | 2.2 nF @ 30 V | Standard | No | -40°C ~ 150°C (TJ) | Through Hole | |
|
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VS-CPV364M4UPBFIGBT MODULE 600V 20A 63W IMS-2 Vishay General Semiconductor - Diodes Division |
3,607 | - |
RFQ |
Bulk | - | Obsolete | - | - | 600 V | 20 A | 63 W | 2.1V @ 15V, 10A | 250 µA | 2.1 nF @ 30 V | Standard | No | -40°C ~ 150°C (TJ) | Through Hole | |
|
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VS-CPV362M4FPBFIGBT MODULE 600V 8.8A 23W IMS-2 Vishay General Semiconductor - Diodes Division |
2,025 | - |
RFQ |
Технические |
Bulk | - | Obsolete | - | - | 600 V | 8.8 A | 23 W | 1.7V @ 15V, 4.8A | 250 µA | 340 pF @ 30 V | Standard | No | -40°C ~ 150°C (TJ) | Through Hole |
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VS-EMF050J60UIGBT MOD 600V 88A 338W EMIPAK2 Vishay General Semiconductor - Diodes Division |
3,087 | - |
RFQ |
Технические |
Bulk | - | Obsolete | - | Three Level Inverter | 600 V | 88 A | 338 W | 2.1V @ 15V, 50A | 100 µA | 9.5 nF @ 30 V | Standard | No | 150°C (TJ) | Chassis Mount |
|
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VS-EMG050J60NIGBT MOD 600V 88A 338W EMIPAK2 Vishay General Semiconductor - Diodes Division |
3,358 | - |
RFQ |
Технические |
Bulk | - | Obsolete | - | Half Bridge | 600 V | 88 A | 338 W | 2.1V @ 15V, 50A | 100 µA | 9.5 nF @ 30 V | Standard | Yes | 150°C (TJ) | Chassis Mount |
|
VS-ENQ030L120SIGBT MOD 1200V 61A EMIPAK-1B Vishay General Semiconductor - Diodes Division |
3,532 | - |
RFQ |
Технические |
Bulk | - | Active | Trench | Three Level Inverter | 1200 V | 61 A | 216 W | 2.52V @ 15V, 30A | 230 µA | 3.34 nF @ 30 V | Standard | Yes | 150°C (TJ) | Chassis Mount |
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