Транзисторы - IGBT - модули

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus IGBTType Configuration Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Power-Max Vce(on)(Max)@VgeIc Current-CollectorCutoff(Max) InputCapacitance(Cies)@Vce Input NTCThermistor OperatingTemperature MountingType
VS-ETL015Y120H

VS-ETL015Y120H

IGBT MOD 1200V 22A 89W EMIPAK-2B

Vishay General Semiconductor - Diodes Division
3,583 -

RFQ

VS-ETL015Y120H

Технические

Bulk - Active Trench - 1200 V 22 A 89 W 3.03V @ 15V, 15A 75 µA 1.07 nF @ 30 V Standard Yes 150°C (TJ) Chassis Mount
VS-GA100NA60UP

VS-GA100NA60UP

IGBT MOD 600V 100A 250W SOT227

Vishay General Semiconductor - Diodes Division
3,319 -

RFQ

VS-GA100NA60UP

Технические

Bulk - Obsolete - Single 600 V 100 A 250 W 2.1V @ 15V, 50A 250 µA 7.4 nF @ 30 V Standard No -55°C ~ 150°C (TJ) Chassis Mount
VS-GA100TS120UPBF

VS-GA100TS120UPBF

IGBT MOD 1200V 182A INT-A-PAK

Vishay General Semiconductor - Diodes Division
3,845 -

RFQ

VS-GA100TS120UPBF

Технические

Bulk - Obsolete - Half Bridge 1200 V 182 A 520 W 3V @ 15V, 100A 1 mA 18.67 nF @ 30 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GA100TS60SFPBF

VS-GA100TS60SFPBF

IGBT MOD 600V 220A INT-A-PAK

Vishay General Semiconductor - Diodes Division
3,271 -

RFQ

VS-GA100TS60SFPBF

Технические

Bulk - Obsolete PT Half Bridge 600 V 220 A 780 W 1.28V @ 15V, 100A 1 mA 16.25 nF @ 30 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GA200HS60S1PBF

VS-GA200HS60S1PBF

IGBT MOD 600V 480A INT-A-PAK

Vishay General Semiconductor - Diodes Division
2,820 -

RFQ

Bulk - Obsolete - Half Bridge 600 V 480 A 830 W 1.21V @ 15V, 200A 1 mA 32.5 nF @ 30 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GA200SA60SP

VS-GA200SA60SP

IGBT MODULE 600V 781W SOT227

Vishay General Semiconductor - Diodes Division
2,285 -

RFQ

VS-GA200SA60SP

Технические

Bulk - Obsolete - Single 600 V - 781 W 1.3V @ 15V, 100A 1 mA 16.25 nF @ 30 V Standard No -55°C ~ 150°C (TJ) Chassis Mount
VS-GA200SA60UP

VS-GA200SA60UP

IGBT MOD 600V 200A 500W SOT227

Vishay General Semiconductor - Diodes Division
2,965 -

RFQ

Bulk - Obsolete - Single 600 V 200 A 500 W 1.9V @ 15V, 100A 1 mA 16.5 nF @ 30 V Standard No -55°C ~ 150°C (TJ) Chassis Mount
VS-GA200TH60S

VS-GA200TH60S

IGBT MOD 600V 260A INT-A-PAK

Vishay General Semiconductor - Diodes Division
3,971 -

RFQ

Bulk - Obsolete - Half Bridge 600 V 260 A 1042 W 1.9V @ 15V, 200A (Typ) 5 µA 13.1 nF @ 25 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GA300TD60S

VS-GA300TD60S

IGBT MOD 600V 530A INT-A-PAK

Vishay General Semiconductor - Diodes Division
2,958 -

RFQ

Bulk - Obsolete - Half Bridge 600 V 530 A 1136 W 1.45V @ 15V, 300A 750 µA - Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GA400TD60S

VS-GA400TD60S

IGBT MOD 600V 750A INT-A-PAK

Vishay General Semiconductor - Diodes Division
2,879 -

RFQ

Bulk - Obsolete - Half Bridge 600 V 750 A 1563 W 1.52V @ 15V, 400A 1 mA - Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GB05XP120KTPBF

VS-GB05XP120KTPBF

IGBT MODULE 1200V 0 76W MTP

Vishay General Semiconductor - Diodes Division
3,520 -

RFQ

VS-GB05XP120KTPBF

Технические

Bulk - Active - Three Phase Inverter 1200 V 12 A 76 W - 250 µA - Standard Yes -40°C ~ 150°C (TJ) Chassis Mount
VS-GB100DA60UP

VS-GB100DA60UP

IGBT MOD 600V 125A 447W SOT227

Vishay General Semiconductor - Diodes Division
2,962 -

RFQ

VS-GB100DA60UP

Технические

Bulk - Obsolete - Single 600 V 125 A 447 W 2.8V @ 15V, 100A 100 µA - Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GB100LH120N

VS-GB100LH120N

IGBT MOD 1200V 200A INT-A-PAK

Vishay General Semiconductor - Diodes Division
2,252 -

RFQ

Bulk - Obsolete - Single 1200 V 200 A 833 W 1.77V @ 15V, 100A (Typ) 1 mA 8.96 nF @ 25 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GB100LP120N

VS-GB100LP120N

IGBT MOD 1200V 200A INT-A-PAK

Vishay General Semiconductor - Diodes Division
2,374 -

RFQ

Bulk - Obsolete - Single 1200 V 200 A 658 W 1.8V @ 15V, 100A (Typ) 1 mA 7.43 nF @ 25 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GB100NH120N

VS-GB100NH120N

IGBT MOD 1200V 200A INT-A-PAK

Vishay General Semiconductor - Diodes Division
3,115 -

RFQ

Bulk - Obsolete - Single 1200 V 200 A 833 W 2.35V @ 15V, 100A 5 mA 8.58 nF @ 25 V Standard No 150°C (TJ) Chassis Mount
VS-GB100TH120N

VS-GB100TH120N

IGBT MOD 1200V 200A INT-A-PAK

Vishay General Semiconductor - Diodes Division
2,453 -

RFQ

Bulk - Obsolete - Half Bridge 1200 V 200 A 833 W 2.35V @ 15V, 100A 5 mA 8.58 nF @ 25 V Standard No 150°C (TJ) Chassis Mount
VS-GB100TH120U

VS-GB100TH120U

IGBT MOD 1200V 200A INT-A-PAK

Vishay General Semiconductor - Diodes Division
2,918 -

RFQ

VS-GB100TH120U

Технические

Bulk - Obsolete NPT Half Bridge 1200 V 200 A 1136 W 3.6V @ 15V, 100A 5 mA 8.45 nF @ 20 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GB100TP120N

VS-GB100TP120N

IGBT MOD 1200V 200A INT-A-PAK

Vishay General Semiconductor - Diodes Division
3,230 -

RFQ

Bulk - Obsolete - Half Bridge 1200 V 200 A 650 W 2.2V @ 15V, 100A 5 mA 7.43 nF @ 25 V Standard No 150°C (TJ) Chassis Mount
VS-GB100TP120U

VS-GB100TP120U

IGBT MOD 1200V 150A INT-A-PAK

Vishay General Semiconductor - Diodes Division
3,396 -

RFQ

Bulk - Obsolete - Half Bridge 1200 V 150 A 735 W 3.9V @ 15V, 100A 2 mA 4.3 nF @ 25 V Standard No - Chassis Mount
VS-GB100TS60NPBF

VS-GB100TS60NPBF

IGBT MOD 600V 108A INT-A-PAK

Vishay General Semiconductor - Diodes Division
3,292 -

RFQ

VS-GB100TS60NPBF

Технические

Bulk - Obsolete NPT Half Bridge 600 V 108 A 390 W 2.85V @ 15V, 100A 100 µA - Standard No -40°C ~ 150°C (TJ) Chassis Mount
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