Fairchild Semiconductor FDAF59N30

Номер детали
FDAF59N30
Производитель
Fairchild Semiconductor
Категория:
Транзисторы - FET, MOSFET - одиночные
Упаковка
TO-3PF
Технические
Нахождение ЧипаFDAF59N30.pdf
Описание
MOSFET N-CH 300V 34A TO3PF
Количество

Модуль$0

Извлечение$0

Оплата
payment
Доставка
payment

Product details

1. How to order FDAF59N30 on Нахождение Чипа?

Currently, Нахождение Чипа only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Нахождение Чипа guarantee that FDAF59N30 is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the FDAF59N30. All suppliers must pass our qualification reviews before they can publish their products including FDAF59N30 on Нахождение Чипа; we pay more attention to the channels and quality of FDAF59N30 products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the FDAF59N30 price and inventory displayed accurate?

The price and inventory of FDAF59N30 fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

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Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of FDAF59N30?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the FDAF59N30 we delivered, we will accept the replacement or return of the FDAF59N30 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of FDAF59N30.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as FDAF59N30 pin diagram, FDAF59N30 datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Изображение FDD6N20TF FDP5N50 FDPF12N35 FDPF7N50F FDP75N08
Номер детали FDD6N20TF FDP5N50 FDPF12N35 FDPF7N50F FDP75N08
Производитель Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor
Packaging Tube Tube Tube Tube Tube
Series UniFET™ UniFET™ UniFET™ UniFET™ UniFET™
ProductStatus Obsolete Obsolete Obsolete Obsolete Obsolete
FETType N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 300 V 300 V 300 V 300 V 300 V
Current-ContinuousDrain(Id)@25°C 34A (Tc) 34A (Tc) 34A (Tc) 34A (Tc) 34A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V 10V 10V 10V 10V
RdsOn(Max)@IdVgs 56mOhm @ 17A, 10V 56mOhm @ 17A, 10V 56mOhm @ 17A, 10V 56mOhm @ 17A, 10V 56mOhm @ 17A, 10V
Vgs(th)(Max)@Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 100 nC @ 10 V 100 nC @ 10 V 100 nC @ 10 V 100 nC @ 10 V 100 nC @ 10 V
Vgs(Max) ±30V ±30V ±30V ±30V ±30V
InputCapacitance(Ciss)(Max)@Vds 4670 pF @ 25 V 4670 pF @ 25 V 4670 pF @ 25 V 4670 pF @ 25 V 4670 pF @ 25 V
FETFeature - - - - -
PowerDissipation(Max) 161W (Tc) 161W (Tc) 161W (Tc) 161W (Tc) 161W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
MountingType Through Hole Through Hole Through Hole Through Hole Through Hole

FDAF59N30 Актуальная информация

Включенные следующие детали "FDAF59N30" ISSI, Интегрированные Силиконовые Решения Инк FDAF59N30.

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