Toshiba Semiconductor and Storage TK65A10N1,S4X

Номер детали
TK65A10N1,S4X
Производитель
Toshiba Semiconductor and Storage
Категория:
Транзисторы - FET, MOSFET - одиночные
Упаковка
TO-220SIS
Технические
Нахождение ЧипаTK65A10N1,S4X.pdf
Описание
MOSFET N-CH 100V 65A TO220SIS
Количество

Модуль$0

Извлечение$0

Оплата
payment
Доставка
payment

Product details

1. How to order TK65A10N1,S4X on Нахождение Чипа?

Currently, Нахождение Чипа only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Нахождение Чипа guarantee that TK65A10N1,S4X is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the TK65A10N1,S4X. All suppliers must pass our qualification reviews before they can publish their products including TK65A10N1,S4X on Нахождение Чипа; we pay more attention to the channels and quality of TK65A10N1,S4X products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the TK65A10N1,S4X price and inventory displayed accurate?

The price and inventory of TK65A10N1,S4X fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of TK65A10N1,S4X?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the TK65A10N1,S4X we delivered, we will accept the replacement or return of the TK65A10N1,S4X only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of TK65A10N1,S4X.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as TK65A10N1,S4X pin diagram, TK65A10N1,S4X datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Изображение TK65A10N1,S4X SSM3K341TU,LF TPH8R903NL,LQ TK7S10N1Z,LQ SSM6K361NU,LF
Номер детали TK65A10N1,S4X SSM3K341TU,LF TPH8R903NL,LQ TK7S10N1Z,LQ SSM6K361NU,LF
Производитель Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
Packaging Tube Tube Tube Tube Tube
Series U-MOSVIII-H U-MOSVIII-H U-MOSVIII-H U-MOSVIII-H U-MOSVIII-H
ProductStatus Active Active Active Active Active
FETType N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V 100 V 100 V 100 V 100 V
Current-ContinuousDrain(Id)@25°C 65A (Tc) 65A (Tc) 65A (Tc) 65A (Tc) 65A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V 10V 10V 10V 10V
RdsOn(Max)@IdVgs 4.8mOhm @ 32.5A, 10V 4.8mOhm @ 32.5A, 10V 4.8mOhm @ 32.5A, 10V 4.8mOhm @ 32.5A, 10V 4.8mOhm @ 32.5A, 10V
Vgs(th)(Max)@Id 4V @ 1mA 4V @ 1mA 4V @ 1mA 4V @ 1mA 4V @ 1mA
GateCharge(Qg)(Max)@Vgs 81 nC @ 10 V 81 nC @ 10 V 81 nC @ 10 V 81 nC @ 10 V 81 nC @ 10 V
Vgs(Max) ±20V ±20V ±20V ±20V ±20V
InputCapacitance(Ciss)(Max)@Vds 5400 pF @ 50 V 5400 pF @ 50 V 5400 pF @ 50 V 5400 pF @ 50 V 5400 pF @ 50 V
FETFeature - - - - -
PowerDissipation(Max) 45W (Tc) 45W (Tc) 45W (Tc) 45W (Tc) 45W (Tc)
OperatingTemperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
MountingType Through Hole Through Hole Through Hole Through Hole Through Hole

TK65A10N1,S4X Актуальная информация

Включенные следующие детали "TK65A10N1,S4X" ISSI, Интегрированные Силиконовые Решения Инк TK65A10N1,S4X.

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