onsemi FDP2D9N12C

Номер детали
FDP2D9N12C
Производитель
onsemi
Категория:
Транзисторы - FET, MOSFET - одиночные
Упаковка
TO-220
Технические
Нахождение ЧипаFDP2D9N12C.pdf
Описание
PTNG 120V N-FET TO220
Количество

Модуль$0

Извлечение$0

Оплата
payment
Доставка
payment

Product details

1. How to order FDP2D9N12C on Нахождение Чипа?

Currently, Нахождение Чипа only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Нахождение Чипа guarantee that FDP2D9N12C is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the FDP2D9N12C. All suppliers must pass our qualification reviews before they can publish their products including FDP2D9N12C on Нахождение Чипа; we pay more attention to the channels and quality of FDP2D9N12C products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the FDP2D9N12C price and inventory displayed accurate?

The price and inventory of FDP2D9N12C fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of FDP2D9N12C?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the FDP2D9N12C we delivered, we will accept the replacement or return of the FDP2D9N12C only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of FDP2D9N12C.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as FDP2D9N12C pin diagram, FDP2D9N12C datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Изображение FDP8D5N10C FDP032N08B-F102 FDN335N FDC8884 FDS8878
Номер детали FDP8D5N10C FDP032N08B-F102 FDN335N FDC8884 FDS8878
Производитель onsemi onsemi onsemi onsemi onsemi
Packaging Tube Tube Tube Tube Tube
Series PowerTrench® PowerTrench® PowerTrench® PowerTrench® PowerTrench®
ProductStatus Last Time Buy Last Time Buy Last Time Buy Last Time Buy Last Time Buy
FETType N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 120 V 120 V 120 V 120 V 120 V
Current-ContinuousDrain(Id)@25°C 18A (Ta), 210A (Tc) 18A (Ta), 210A (Tc) 18A (Ta), 210A (Tc) 18A (Ta), 210A (Tc) 18A (Ta), 210A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 6V, 10V 6V, 10V 6V, 10V 6V, 10V 6V, 10V
RdsOn(Max)@IdVgs 2.9mOhm @ 100A, 10V 2.9mOhm @ 100A, 10V 2.9mOhm @ 100A, 10V 2.9mOhm @ 100A, 10V 2.9mOhm @ 100A, 10V
Vgs(th)(Max)@Id 4V @ 686µA 4V @ 686µA 4V @ 686µA 4V @ 686µA 4V @ 686µA
GateCharge(Qg)(Max)@Vgs 109 nC @ 10 V 109 nC @ 10 V 109 nC @ 10 V 109 nC @ 10 V 109 nC @ 10 V
Vgs(Max) ±20V ±20V ±20V ±20V ±20V
InputCapacitance(Ciss)(Max)@Vds 8894 pF @ 60 V 8894 pF @ 60 V 8894 pF @ 60 V 8894 pF @ 60 V 8894 pF @ 60 V
FETFeature - - - - -
PowerDissipation(Max) 2.4W (Ta), 333W (Tc) 2.4W (Ta), 333W (Tc) 2.4W (Ta), 333W (Tc) 2.4W (Ta), 333W (Tc) 2.4W (Ta), 333W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
MountingType Through Hole Through Hole Through Hole Through Hole Through Hole

FDP2D9N12C Актуальная информация

Включенные следующие детали "FDP2D9N12C" ISSI, Интегрированные Силиконовые Решения Инк FDP2D9N12C.

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